公开(公告)号：US5922212A

公开(公告)日：1999-07-13

申请号：US663001

申请日：1996-06-07

Applicant: Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

Inventor： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  C23F1/00

CPC classification number: G01P15/125 ,  B81B3/0072 ,  B81C1/00666 ,  G01P15/0802 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/017 ,  G01P2015/0814

Abstract: A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

Abstract translation: 公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。 在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。 此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。 通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。 通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

公开(公告)号：US11785852B2

公开(公告)日：2023-10-10

申请号：US17979783

申请日：2022-11-03

Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

Inventor： You Qian ,  Joan Josep Giner De Haro ,  Rakesh Kumar

IPC: H10N30/067 ,  H10N30/073 ,  H04R17/02 ,  H10N30/08 ,  H10N30/87 ,  H10N30/00 ,  H10N30/06

CPC classification number: H10N30/067 ,  H04R17/02 ,  H10N30/06 ,  H10N30/073 ,  H10N30/08 ,  H10N30/1051 ,  H10N30/872 ,  B81B2201/0257 ,  B81C2201/013 ,  B81C2201/016 ,  B81C2201/019 ,  B81C2201/0167

Abstract: A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

公开(公告)号：US10082135B2

公开(公告)日：2018-09-25

申请号：US13508650

申请日：2010-11-12

Applicant: Yves Fouillet ,  Francois Baleras ,  Martine Cochet ,  Sandrine Maubert

Inventor： Yves Fouillet ,  Francois Baleras ,  Martine Cochet ,  Sandrine Maubert

IPC: F04B45/04 ,  F04B43/04 ,  F04B43/02 ,  A61M5/145 ,  B81C1/00

CPC classification number: F04B43/046 ,  A61M5/14586 ,  B81B2201/036 ,  B81B2203/0127 ,  B81C1/00182 ,  B81C2201/0167 ,  B81C2201/019 ,  F04B43/02 ,  F04B43/043 ,  F05C2203/02 ,  F05C2203/06 ,  Y10T29/494

Abstract: A method for producing at least one deformable membrane micropump including a first substrate and a second substrate assembled together, the first substrate including at least one cavity and the second substrate including at least one deformable membrane arranged facing the cavity. In the method: the cavity is produced in the first substrate; then the first and second substrates are assembled together; then the deformable membrane is produced in the second substrate.

公开(公告)号：US20180222748A1

公开(公告)日：2018-08-09

申请号：US15875943

申请日：2018-01-19

Applicant: Georgia Tech Research Corporation

Inventor： Benoit Hamelin ,  Farrokh Ayazi

IPC: B81C1/00 ,  B23K26/20

CPC classification number: B81C1/0065 ,  B23K26/0006 ,  B23K26/20 ,  B23K26/34 ,  B23K26/351 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/52 ,  B81B3/007 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0166 ,  B81C2201/0167 ,  B81C2201/0169 ,  H01L41/253 ,  H03H3/013 ,  H03H3/04

Abstract: Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

公开(公告)号：US09932225B2

公开(公告)日：2018-04-03

申请号：US15148130

申请日：2016-05-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09926191B2

公开(公告)日：2018-03-27

申请号：US15284868

申请日：2016-10-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09862598B2

公开(公告)日：2018-01-09

申请号：US14840422

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: G06F17/50 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US20170349430A1

公开(公告)日：2017-12-07

申请号：US15430813

申请日：2017-02-13

Applicant: Mitsubishi Electric Corporation

Inventor： Kimitoshi SATO

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0167 ,  B81C2201/0176 ,  G01L9/0045 ,  G01L9/0047 ,  G01L9/0048 ,  G01L9/005 ,  G01L9/0073 ,  G01L19/04

Abstract: A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

公开(公告)号：US09776854B2

公开(公告)日：2017-10-03

申请号：US15068511

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira Fujimoto ,  Naofumi Nakamura ,  Tamio Ikehashi

IPC: H01L29/786 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00365 ,  B81C2201/0167 ,  B81C2201/0169 ,  G01P15/0802 ,  G01P15/125

Abstract: According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.

公开(公告)号：US20170133472A1

公开(公告)日：2017-05-11

申请号：US15409970

申请日：2017-01-19

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.