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公开(公告)号：KR101807247B1
公开(公告)日：2017-12-11
申请号：KR1020110096129
申请日：2011-09-23
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11582 , H01L21/3105 , H01L21/31111 , H01L27/11556
Abstract: 3차원반도체장치의제조방법이제공된다. 3차원반도체장치의제조방법은기판상에, 희생막들및 절연막들이번갈아반복적으로적층된적층막구조체를형성하는것, 적층막구조체를관통하여상기기판에연결되는반도체막들을형성하는것, 적층막구조체를패터닝하여상기반도체막들사이에트렌치를형성하는것, 트렌치에노출된상기절연막들의표면에선택적으로패시베이션막을형성하는것, 트렌치에노출된상기희생막들을선택적으로제거하여상기절연막들사이에리세스영역들을형성하는것, 및상기리세스영역들각각에도전패턴들을국소적으로형성하는것을포함한다.
Abstract translation: 提供了一种制造三维半导体器件的方法。 衬底，牺牲层上形成三维半导体器件的制造方法和绝缘膜交替haneungeot形成穿过多层膜结构重复堆叠的叠层膜结构，haneungeot形成被连接到衬底的半导体薄膜，所述多层薄膜结构 到图案化haneungeot形成沟槽，所述半导体膜，haneungeot的所述绝缘层暴露于所述沟槽的表面上形成选择性地钝化膜，选择性地去除暴露于所述绝缘层的在它们之间的伊利接入区中的沟槽的所述牺牲层之间 并且在每个凹陷区域中局部地形成导电图案。
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公开(公告)号：KR101728135B1
公开(公告)日：2017-04-18
申请号：KR1020100055688
申请日：2010-06-11
Applicant: 삼성전자주식회사
IPC: H01L21/8238 , H01L21/311 , H01L27/108 , H01L49/02
CPC classification number: H01L27/10817 , H01L21/31111 , H01L21/31116 , H01L28/91
Abstract: 반도체소자의제조방법이제공된다. 반도체소자의제조방법은, 기판상에스토리지노드콘택플러그를포함하는층간절연막을형성하고, 상기층간절연막상에실리콘막또는실리콘게르마늄막을포함하는식각정지막을형성하고, 상기식각정지막상에몰드용절연막을형성하고, 상기몰드용절연막을상기식각정지막이노출될때까지선택적으로식각하여스토리지노드전극형성용홀을형성하고, 상기스토리지전극형성용홀 내면및 상기몰드용절연막의상면상에컨포말하게스토리지전극용도전막을형성하고, 상기스토리지전극용도전막이형성된기판을열처리하여상기몰드용절연막에의해노출된상기식각정지막의일정영역을금속실리사이드패턴으로형성하는것을포함한다.
Abstract translation: 提供了一种制造半导体器件的方法。 用于制造半导体元件的层间绝缘膜包括：存储节点接触插塞的基板上，对于层间绝缘层和硅膜或蚀刻停止膜的硅锗模具的方法，以及形成含有在绝缘膜上膜的蚀刻停止膜 的形成，并且选择性蚀刻以形成一个存储节点电极yonghol形成，yonghol内表面形成的存储电极和导电保形于上的表面服装绝缘膜的模具，直到一个用于模制的绝缘膜是蚀刻停止曝光存储电极 形成膜，并且包括热处理在其上形成的导电膜形成的存储电极的基板使用在由上模的用于金属硅化物图案的绝缘膜露出的预定区域中的蚀刻停止膜。
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公开(公告)号：KR1020160013469A
公开(公告)日：2016-02-04
申请号：KR1020140094987
申请日：2014-07-25
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/02 , H01L21/683
CPC classification number: H01L21/02068 , H01L21/67051 , H01L21/78
Abstract: 본발명은기판처리장치및 기판처리방법에관한것으로, 기판처리장치는기판을지지하는스핀척, 상기기판의표면위에서이동가능하며상기기판의표면상에처리액의액적들을제공하는제1 노즐, 상기기판의표면위에서상기제1 노즐을이동시키는노즐아암, 및상기기판의표면상에웨팅액을제공하여웨팅막을형성하는제2 노즐을포함한다. 상기제2 노즐은상기제1 노즐과함께수직이동된다. 상기웨팅막은상기제2 노즐이수직이동함에따라그 두께가변동된다.
Abstract translation: 本发明涉及一种处理基板的装置和方法。 用于处理基板的装置包括支撑基板的旋转卡盘; 第一喷嘴，其可在所述基板的表面上移动，并且在所述基板的表面上提供处理溶液的液滴; 喷嘴臂，其将所述第一喷嘴移动到所述基板的表面上; 以及第二喷嘴，其在衬底的表面上提供润湿溶液并形成润湿层。 第二喷嘴与第一喷嘴垂直移动。 润湿层的厚度随着第二喷嘴垂直移动而改变。
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公开(公告)号：KR101575190B1
公开(公告)日：2015-12-08
申请号：KR1020100013113
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/8242 , H01L21/8247
CPC classification number: H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
Abstract: 본발명은반도체기판상의절연막트렌치측벽을유기소재고분자물질과 H-F기가반응하여식각액을생성선택식각하여, 윗면과바닥면의 CD가차이가없는깊은트렌치를만드는방법을제공한다. 반도체기판상에산화막을형성하고, 상기산화막에깊은트렌치를형성하고, 상기트렌치소정의깊이에유기소재고분자물질을채우고, 상기트렌치안의유기소재고분자물질에 H-F기가있는식각가스를공급하여유기소재고분자물질성분과 H-F기가반응하여부산물로물을만들어축적된 H-F기가습식식각액이되어선택적으로트렌치측벽을식각하고, 상기유기소재고분자물질을제거하면반도체기판상에윗면과바닥면의 CD가일정한산화막트렌치가형성된다.
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公开(公告)号：KR101316054B1
公开(公告)日：2013-10-10
申请号：KR1020090063235
申请日：2009-07-10
IPC: C09K13/08
Abstract: 불화수소, 음이온성 고분자 및 탈이온수를 포함하고, 반도체 기판 상의 질화막 대비 실리콘 산화막의 식각 선택비가 높은 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법이 제공된다.
실리콘 산화막, 식각, 음이온성 고분자, 질화막, 식각 선택비-
Patent Agency Ranking
公开(公告)号：KR1020130091550A
公开(公告)日：2013-08-19
申请号：KR1020120012927
申请日：2012-02-08
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/02
CPC classification number: H01L21/02101 , H01L21/3081 , H01L21/67017 , H01L21/67034 , H01L21/67109 , H01L21/67253
Abstract: PURPOSE: A liquid supplying system for treating a substrate and a method using the system are provided to improve the separation efficiency of a rinsing liquid by forming a drying liquid separation part including first and second separation parts. CONSTITUTION: A substrate drying part (100) dries a rinsing liquid on a substrate. A drying liquid separation part (20) collects mixed liquid from the substrate drying part. The drying liquid separation part separates the drying liquid from the mixed liquid. The drying liquid separation part includes a first separation part and a second separation part. A drying liquid supply part (30) resupplies the separated drying liquid to the substrate drying part.
Abstract translation: 目的：提供一种用于处理基材的液体供应系统和使用该系统的方法，以通过形成包括第一和第二分离部分的干燥液体分离部分来提高冲洗液体的分离效率。 构成：基材干燥部件（100）将漂洗液体干燥在基材上。 干燥液分离部（20）从基材干燥部收集混合液。 干燥液分离部将干燥液与混合液分离。 干燥液分离部分包括第一分离部分和第二分离部分。 干燥液体供应部件（30）将分离的干燥液体补给到基材干燥部分。
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公开(公告)号：KR1020130063813A
公开(公告)日：2013-06-17
申请号：KR1020110130385
申请日：2011-12-07
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: H01L21/67034 , F26B5/04 , H01L21/02052 , H01L21/67051 , H01L21/6715
Abstract: PURPOSE: An apparatus and a method for drying a substrate are provided to prevent a supercritical fluid from being directly supplied to a substrate by using a shielding plate, and the warpage of the substrate due to the pressure of the supercritical fluid. CONSTITUTION: A process chamber(100) provides a space(101) for drying a substrate(W). A substrate support member(200) is arranged in a process chamber and supports the substrate. A first supply port(310) supplies a supercritical fluid to the lower part of the substrate. A second supply port(320) supplies the supercritical fluid to the upper part of the substrate. An exhaust port(330) discharges the supercritical fluid remaining in the process chamber to the outside. A shielding plate(340) is positioned in the lower part of the substrate support member.
Abstract translation: 目的：提供一种用于干燥基板的装置和方法，以防止超临界流体通过使用屏蔽板直接供应到基板，并且由于超临界流体的压力而使基板翘曲。 构成：处理室（100）提供用于干燥基底（W）的空间（101）。 衬底支撑构件（200）布置在处理室中并支撑衬底。 第一供应口（310）将超临界流体供应到基底的下部。 第二供应端口（320）将超临界流体供应到基板的上部。 排气口（330）将处理室中剩余的超临界流体排出到外部。 屏蔽板（340）位于基板支撑部件的下部。
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公开(公告)号：KR1020110135768A
公开(公告)日：2011-12-19
申请号：KR1020100055688
申请日：2010-06-11
Applicant: 삼성전자주식회사
IPC: H01L21/8238 , H01L21/311 , H01L27/108 , H01L49/02
CPC classification number: H01L27/10817 , H01L21/31111 , H01L21/31116 , H01L28/91 , H01L21/823871
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance between a storage node contact plug and a storage node electrode by forming the constant area of an etching stopping layer into a metal silicide pattern. CONSTITUTION: An inter-layer insulating film which includes a storage node contact plug(134) is formed on the top of a substrate. An etch stopping layer(140) which includes a silicon film or a silicon germanium layer is formed on the inter-layer insulating film. An insulating layer for a mold is formed on an etching stopping layer. A hole(151) for storage node electrode formation is formed by selectively etching the insulating layer for the mold until the etching stopping layer is exposed. A conduction film for a storage electrode is formed on the upper side of the insulating layer for the mold and the inner side of the hole for storage node electrode formation. A constant area of the etching stopping layer is formed into a metal silicide pattern by thermally treating the substrate in which the conduction film for the storage electrode is formed.
Abstract translation: 目的：提供一种制造半导体器件的方法，通过将蚀刻停止层的恒定区域形成为金属硅化物图案来减小存储节点接触插塞和存储节点电极之间的接触电阻。 构成：在基板的顶部形成包括存储节点接触插塞（134）的层间绝缘膜。 在层间绝缘膜上形成包括硅膜或硅锗层的蚀刻停止层（140）。 在蚀刻停止层上形成用于模具的绝缘层。 通过选择性地蚀刻用于模具的绝缘层而形成用于存储节点电极形成的孔（151），直到蚀刻停止层露出为止。 用于存储电极的导电膜形成在用于模具的绝缘层的上侧和用于存储节点电极形成的孔的内侧。 通过对其中形成有用于存储电极的导电膜的基板进行热处理，将蚀刻停止层的恒定区域形成为金属硅化物图案。
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29.发明公开
公开(公告)号：KR1020110100480A
公开(公告)日：2011-09-14
申请号：KR1020100019502
申请日：2010-03-04
Applicant: 삼성전자주식회사
IPC: C09K13/08
CPC classification number: H01L21/28
Abstract: 고유전막과 식각 선택비를 가지고, 상기 고유전막의 조성을 변화시켜 문턱전압을 조절하는 캡핑막을 식각 대상막으로 하는 식각액은 0.01에서 3wt％의 산, 10wt％에서 40wt％의 불화염 및 용매를 포함한다. 상기 식각액을 사용하면, 고유전막의 데미지가 거의 발생되지 않아 우수한 특성의 고유전막을 형성할 수 있다.
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公开(公告)号：KR1020110093213A
公开(公告)日：2011-08-18
申请号：KR1020100013113
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/8242 , H01L21/8247
CPC classification number: H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
Abstract: PURPOSE: A semiconductor which has a trench without a CD difference between the top and bottom of the semiconductor and a manufacturing method thereof are provided to form a capacitor electrode of a fixed CD on the top and the bottom of the semiconductor, thereby obtaining a DRAM cell with superior electrical features. CONSTITUTION: A trench(130) is filled with an organic material polymer. An etching gas is supplied to the trench. The etching gas includes an H-F group in the organic material polymer. The organic material polymer is reacted with the H-F group to generate a wet etchant. The sidewall of the trench is selectively etched. The trench of a fixed CD is formed on the top and the bottom of the semiconductor by eliminating the organic material polymer.
Abstract translation: 目的：提供在半导体的顶部和底部之间具有没有CD差异的沟槽的半导体及其制造方法，以在半导体的顶部和底部形成固定CD的电容器电极，从而获得DRAM 电池具有优越的电气特性。 构成：沟槽（130）填充有机材料聚合物。 蚀刻气体被供应到沟槽。 蚀刻气体包括有机材料聚合物中的H-F基团。 有机材料聚合物与H-F基团反应以产生湿蚀刻剂。 有选择地蚀刻沟槽的侧壁。 通过去除有机材料聚合物，在半导体的顶部和底部形成固定CD的沟槽。
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