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公开(公告)号：KR1020150096832A
公开(公告)日：2015-08-26
申请号：KR1020140017614
申请日：2014-02-17
Applicant: 삼성전자주식회사
IPC: H04W4/04
CPC classification number: H04W4/02 , H04M3/42348 , H04W4/12
Abstract: 본 발명은 제1 단말의 차량 데이터를 요청하는 신호 및 제2 단말의 위치값을 수신하는 과정; 상기 제1 단말의 위치값 및 플래그(flag) 정보를 수신하는 과정; 상기 플래그 정보를 기반으로, 상기 제1 단말의 위치값을 결정하는 과정; 상기 결정된 제1 단말의 위치값과 상기 제2 단말의 위치값의 차이가, 미리 정해진 임계 위치값 이하인지 여부를 판단하는 과정; 상기 임계 위치값 이하인지 여부에 대한 판단 결과를 기반으로, 상기 제1 단말의 차량 데이터를 추출하는 과정; 및 상기 추출된 제1 단말의 차량 데이터를 송신하는 과정을 포함하는 호스트 장치의 연락처 검색 방법을 개시한다. 다만, 상기 실시예에 한정되지 않으며 다른 실시예가 가능하다.
Abstract translation: 公开了一种用于搜索主机设备中的联系人信息的方法。 该方法包括以下步骤：接收用于请求第一终端的车辆数据的信号和第二终端的位置值; 接收第一终端的位置值和标志信息; 基于所述标志信息确定所述第一终端的位置值; 确定所确定的所述第一终端的位置值和所确定的所述第二终端的位置值之间的差是否等于预定阈值位置值或更小; 基于上述结果，提取第一终端的车辆数据是否差异等于预定阈值位置值; 以及接收所提取的第一终端的车辆数据。 本发明不限于上述实施例，其他实施例也是可能的。
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公开(公告)号：KR1020140095822A
公开(公告)日：2014-08-04
申请号：KR1020130008692
申请日：2013-01-25
Applicant: 삼성전자주식회사
CPC classification number: H01L21/6835 , B32B37/1284 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/162 , B32B2037/268 , B32B2315/08 , B32B2457/14 , H01L21/02057 , H01L21/02126 , H01L21/304 , H01L21/6836 , H01L21/76898 , H01L24/03 , H01L24/14 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2224/0401 , H01L2224/05025 , H01L2224/13023 , H01L2924/12042 , H01L2924/181 , Y10S438/977 , H01L2924/00
Abstract: The present invention relates to a method for processing a substrate which comprises: sequentially forming a first thermosetting adhesive film and a thermosetting release film on a substrate; providing a second thermosetting adhesive film to be coupled to the release film between a carrier and the substrate to attach the substrate to the carrier; reducing the thickness of the substrate in the state supported by the carrier; separating the carrier and the second adhesive film from the release film; and washing the thin substrate to remove the release film and the first adhesive film.
Abstract translation: 本发明涉及一种处理衬底的方法，包括：在衬底上依次形成第一热固性粘合剂膜和热固性剥离膜; 提供第二热固性粘合剂膜，以在载体和基底之间耦合到脱模膜，以将基底附着到载体上; 在载体支撑的状态下减小基板的厚度; 将载体和第二粘合剂膜与脱模膜分离; 并洗涤薄基板以去除脱模膜和第一粘合膜。
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公开(公告)号：KR1020140046862A
公开(公告)日：2014-04-21
申请号：KR1020120113042
申请日：2012-10-11
Applicant: 삼성전자주식회사
CPC classification number: A61B6/4452 , A61B6/4435 , A61B6/5241
Abstract: Disclosed is an X-ray photographing device comprising: a source for emitting X-rays to a target object; a detector for detecting the X-rays penetrating the target object; an arm for connecting the source and the detector, and vertically moving the detector according to the rotation of the source; a support part for supporting the arm; and a control part for controlling the photographing of the target object by operating the arm. [Reference numerals] (560) Control part
Abstract translation: 公开了一种X射线摄影装置，包括：用于向目标物体发射X射线的源; 用于检测穿透所述目标物体的X射线的检测器; 用于连接源和检测器的臂，以及根据源的旋转垂直移动检测器; 用于支撑臂的支撑部分; 以及用于通过操作所述臂来控制所述目标物体的拍摄的控制部。 （附图标记）（560）控制部
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公开(公告)号：KR1020130090164A
公开(公告)日：2013-08-13
申请号：KR1020120011277
申请日：2012-02-03
Applicant: 삼성전자주식회사
Abstract: PURPOSE: Clutch assembly and a washing machine including the same are provided to be equipped with a clutch lever which controls a clutch coupling and a coupling lever, thereby stably operating clutch assembly with a simple structure. CONSTITUTION: A washing machine with clutch assembly (10) includes a clutch coupling, a coupling lever (300) and a clutch lever (200). The clutch coupling delivers the power of a motor to either a turning tub or a pulsator while ascending and descending. The coupling lever rotates for the clutch coupling to move up or down. The clutch lever is formed to rotate and is connected to the coupling lever so that the coupling lever is able to rotate along with the movement of the clutch lever.
Abstract translation: 目的：离合器组件和包括该离合器组件的洗衣机设置有配备有离合器杆，其控制离合器联轴器和联接杆，从而以简单的结构稳定地操作离合器组件。 构成：具有离合器组件（10）的洗衣机包括离合器联轴器，联接杆（300）和离合器杆（200）。 离合器联轴器在上升和下降时将电动机的动力传递到转向桶或波轮。 联接杆旋转，离合器联轴器向上或向下移动。 离合器杆形成为旋转并连接到联接杆，使得联接杆能够随离合杆的移动而旋转。
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公开(公告)号：KR1020120085360A
公开(公告)日：2012-08-01
申请号：KR1020110006617
申请日：2011-01-24
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L21/28273 , H01L27/11531 , H01L27/11517
Abstract: PURPOSE: A gate structure, a forming method thereof, and a method of manufacturing a semiconductor device using the same are provided to prevent an electric field from becoming concentrated on the gate structure by forming a second oxide film on a nitride film through an anisotropic plasma oxidation process. CONSTITUTION: A tunnel insulating film pattern(115) and a floating gate(125) are successively formed on a substrate(100). A first oxide film and a nitride film are successively formed on the floating gate. A dielectric layer pattern(185) is formed on the upper side and a sidewall of the floating gate and a sidewall of the tunnel insulating film pattern. The dielectric layer pattern comprises a first oxide film pattern(155), a nitride pattern(165), and a second oxide film pattern(175). A control gate(195) is formed on the dielectric layer pattern.
Abstract translation: 目的：提供一种栅极结构及其形成方法以及使用该栅极结构的半导体器件的制造方法，以通过各向异性等离子体在氮化物膜上形成第二氧化膜来防止电场集中在栅极结构上 氧化过程。 构成：在衬底（100）上依次形成隧道绝缘膜图案（115）和浮动栅极（125）。 在浮栅上依次形成第一氧化膜和氮化物膜。 介电层图案（185）形成在浮动栅极的上侧和侧壁以及隧道绝缘膜图案的侧壁上。 电介质层图案包括第一氧化膜图案（155），氮化物图案（165）和第二氧化膜图案（175）。 在电介质层图案上形成控制栅极（195）。
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Patent Agency Ranking
公开(公告)号：KR1020120077875A
公开(公告)日：2012-07-10
申请号：KR1020100139991
申请日：2010-12-31
Applicant: 삼성전자주식회사
IPC: H01L23/36 , H01L23/367 , H01L23/433 , H01L23/31 , H01L21/56 , H01L21/683 , H01L25/065 , H01L25/00
CPC classification number: H01L24/97 , H01L21/561 , H01L21/6835 , H01L23/3128 , H01L23/36 , H01L23/3672 , H01L23/3677 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/97 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06568 , H01L2225/06589 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L23/4334 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: PURPOSE: A semiconductor package and a manufacturing method thereof are provided to improve thermal and mechanical durability by forming a heat sink directly contacting a semiconductor chip. CONSTITUTION: Provided is s semiconductor chip. A molding film(350) covering the semiconductor chip is formed. A part of the molding film is eliminated and one side of the semiconductor chip is opened from the molding film. A heat dissipation film(401) directly contacts one side of the semiconductor chip. The semiconductor chip is mounted on a package substrate(80).
Abstract translation: 目的：提供半导体封装及其制造方法，以通过形成直接接触半导体芯片的散热片来提高热和机械耐久性。 构成：提供半导体芯片。 形成覆盖半导体芯片的成型膜（350）。 消除了成型膜的一部分，并且从成型膜打开半导体芯片的一侧。 散热膜（401）直接接触半导体芯片的一侧。 半导体芯片安装在封装基板（80）上。
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公开(公告)号：KR1020120057289A
公开(公告)日：2012-06-05
申请号：KR1020100118960
申请日：2010-11-26
Applicant: 삼성전자주식회사
CPC classification number: H01L29/0657 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L2224/02372 , H01L2224/05571 , H01L2224/13006 , H01L2224/13017 , H01L2224/13024 , H01L2224/13025 , H01L2224/13076 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L21/67 , H01L21/64 , H01L23/48 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize damage to a through electrode by forming a tail covering a protrusion portion of the through electrode. CONSTITUTION: A substrate(101) includes an upper side(101a) and a lower side(101d). Both ends of a through electrode(110) are exposed through the upper side and the lower side, respectively. The through electrode includes a protrusion portionprojected from the lower side. A metal wiring(112) is electrically connected to the through electrode. Protective films(142,132) cover the upper side and lower side of the substrate. An insulating film(103) surrounds a side of the through electrode.
Abstract translation: 目的：提供一种半导体器件及其制造方法，以通过形成覆盖通孔的突出部分的尾部来最小化对通孔的损伤。 构成：衬底（101）包括上侧（101a）和下侧（101d）。 贯通电极（110）的两端分别通过上侧和下侧露出。 贯通电极包括从下侧突出的突出部。 金属布线（112）与通孔电连接。 保护膜（142,132）覆盖基板的上侧和下侧。 绝缘膜（103）围绕贯通电极的一侧。
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公开(公告)号：KR101140396B1
公开(公告)日：2012-05-03
申请号：KR1020050058642
申请日：2005-06-30
Applicant: 삼성전자주식회사
IPC: G03G15/14
Abstract: An imaging apparatus having a resistance measuring part of a middle transfer belt is provided to set the optimum transfer bias voltage by measuring the resistance value of a rotated and driven transfer belt in real time. A resistance measuring part(170) has a conductive roller(171), at least one measuring roller(173,175), and a detection ammeter(A). The conductive roller(171), contacted with a first portion of a middle transfer belt(150), supplies a reference voltage. The measuring roller(173,175), contacted with a second portion of the middle transfer belt(150), forms an electric path from the conductive roller(171). The detection ammeter(A), formed on the electric path, measures a detection current.
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公开(公告)号：KR101070624B1
公开(公告)日：2011-10-07
申请号：KR1020080052321
申请日：2008-06-03
Applicant: 삼성전자주식회사
IPC: G03G15/00
CPC classification number: G03G15/6558 , B65H5/36 , B65H2301/3121 , G03G15/235 , G03G2215/00409 , G03G2215/00675
Abstract: 이개시된화상형성장치는, 인쇄매체를공급하는매체공급부와; 구동롤러와, 전사벨트를사이에두고구동롤러와마주하게배치되어전사벨트와의사이에전사닙을형성하는전사롤러를포함하며, 전사벨트에형성된토너화상을인쇄매체에전사하는전사유니트와; 매체공급부로부터전사닙방향으로이동하는인쇄매체를가이드하는가이드부를포함하며, 전사닙방향으로의인쇄매체의진입방향과전사벨트의진입방향이서로다르고, 가이드부는매체공급부로부터공급된인쇄매체의이동을전사닙방향으로변경하는제1섹션과, 인쇄매체가전사닙을통과함에따라인쇄매체의후단부가제1섹션으로부터이탈시인쇄매체의후단부의방향이점차적으로변경되도록구성된제2섹션을포함하는것을특징으로한다.
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公开(公告)号：KR1020110063266A
公开(公告)日：2011-06-10
申请号：KR1020100059148
申请日：2010-06-22
Applicant: 삼성전자주식회사
IPC: H01L23/00 , H01L23/498
CPC classification number: H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2225/06565 , H01L2924/15311 , H01L24/05 , H01L23/49822 , H01L24/73 , H01L2224/32145
Abstract: PURPOSE: A semiconductor device is provided to obtain the superior insulating characteristic by improving the contact reliability of the semiconductor device. CONSTITUTION: A through electrode(20) fills the via-hole(16) of a semiconductor substrate(10). A via-hole insulating film(22) is formed between a exposed semiconductor substrate and the through electrode. A barrier film(24) and a conductive connecting part(26) are successively formed on the via-hole insulating film. The conductive connecting part includes copper, tungsten, aluminum, silver, gold, indium, or polysilicon. The protrusion(27) of the conductive connecting part is protruded by eliminating a part of the semiconductor substrate.
Abstract translation: 目的：通过提高半导体器件的接触可靠性，提供半导体器件以获得优异的绝缘特性。 构成：通孔电极（20）填充半导体衬底（10）的通孔（16）。 在暴露的半导体衬底和贯通电极之间形成通孔绝缘膜（22）。 隔离膜（24）和导电连接部（26）依次形成在通孔绝缘膜上。 导电连接部分包括铜，钨，铝，银，金，铟或多晶硅。 通过去除半导体衬底的一部分，导电连接部分的突起（27）突出。
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