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21.发明授权
公开(公告)号：KR101418276B1
公开(公告)日：2014-07-15
申请号：KR1020120136344
申请日：2012-11-28
Applicant: 한국화학연구원
CPC classification number: H05K1/097 , B05D3/02 , B05D3/0254 , B05D5/12 , H05K3/1275 , H05K3/1283 , H05K2203/086
Abstract: 본 발명은 a) 금속 전구체, 산, 아민 및 환원제를 포함하는 제1 용액을 가열 및 교반하여 표면 산화막 형성이 제어된 금속 나노입자를 합성하는 단계, b) 상기 a) 단계에서 생성된 금속 나노입자를 비수계 용매에 분산시켜 전도성 잉크 조성물을 제조하는 단계, c) 상기 전도성 잉크 조성물을 절연성 기판에 도포하는 단계 및 d) 잉크 조성물이 도포된 절연성 기판을 열처리하여 금속 전도성 박막을 형성하는 단계를 포함하는 금속 전도성 박막의 제조방법에 관한 것이다.
본 발명에 따른 금속 전도성 박막 제조방법은 기존의 귀금속 나노입자 기반의 전도성 잉크 조성물에 비해 저가, 대면적 전도성 박막 제조공정을 가능케 할뿐만 아니라, 표면 산화막의 제어를 통해 우수한 전도도를 가지는 금속 전도성 박막의 제조방법을 제공한다.-
公开(公告)号：KR101395779B1
公开(公告)日：2014-05-19
申请号：KR1020130040135
申请日：2013-04-11
Applicant: 한국화학연구원
IPC: C09D11/00 , H01L31/042
CPC classification number: Y02E10/50
Abstract: 본 발명은 태양전지 광활성층의 제조방법에 관한 것으로, 상세하게, 본 발명의 제조방법은 a) 11족 금속의 제1칼코젠화합물 및 상기 제1칼코젠화합물보다 낮은 융점을 갖는 11족 금속의 제2칼코젠화합물이 단일한 입자 내에 혼재된 복합 입자 및 12족 내지 14족에서 하나 또는 둘 이상 선택된 원소의 제3칼코젠화합물을 함유하는 잉크를 기판에 도포하여 도포막을 형성하는 단계; 및 b) 상기 도포막을 열처리하여 구리 및 12족 내지 14족에서 하나 또는 둘 이상 선택된 원소의 다원 칼코젠화합물 막을 제조하는 단계를 포함한다.
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公开(公告)号：KR1020130116197A
公开(公告)日：2013-10-23
申请号：KR1020130040111
申请日：2013-04-11
Applicant: 한국화학연구원
IPC: C09D11/00 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , C09D11/00
Abstract: PURPOSE: Ink is provided to produce a semiconductor compound based photoactive layer in a single phase by a low temperature heat-processing at a temperature lower than 550°C, which is a process allowable temperature. CONSTITUTION: Ink contains the following: a composite particle which contains a first chalcogen compound of 11th group, and a second chalcogen compound of the 11th group with the lower melting point than the first chalcogen compound; and a precursor of more than one element selected from 12-14th group. The melting point of the second chalcogen compound is 220-550°C. A production method of a solar cell photoactive layer comprises a step of forming a coating film by coating the ink on a substrate, and a step of heat-processing the coating film.
Abstract translation: 目的：提供油墨以通过在低于550℃的温度下进行的低温热处理在单相中制造半导体化合物基光活性层，这是工艺允许温度。 构成：油墨含有如下：含有第11组第一硫属化合物的复合颗粒和第11组熔点比第一硫属化合物低的第二硫属化合物; 以及选自第12-14组的多于一种元素的前体。 第二硫属化合物的熔点为220-550℃。 太阳能电池光活性层的制造方法包括通过在基板上涂布油墨而形成涂膜的工序和对涂膜进行热处理的工序。
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公开(公告)号：KR1020130116031A
公开(公告)日：2013-10-22
申请号：KR1020130040135
申请日：2013-04-11
Applicant: 한국화학연구원
IPC: C09D11/00 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , C09D11/00
Abstract: PURPOSE: A manufacturing method of a photoactive layer is comprises to be able to manufacture multi-source chalcogen compound (a photoactive layer) with high quality through simple, safe and convenient processes, or to be able to manufacture a photoactive layer made of coarse grains, having an excellent compositional stability and uniformity, and an elaborate fine structure. CONSTITUTION: Ink includes composite particles in which a first chalcogen compound of a metal of group 11, and a second chalcogen compound of a metal of group 11, which has a lower melting point than the first chalcogen compound, are mixed in a single particle; and a third chalcogen compound of one or more than two selected from group 12-14. A manufacturing method of a photoactive layer for a solar cell comprises (i) a step of forming a coated film by coating the ink on a substrate; and (ii) a step of manufacturing a multi-source chalcogen compound film of a metal of group 11, and one or more than two elements selected from group 12-14, by heat-treating the coated film.
Abstract translation: 目的：光活性层的制造方法包括能够通过简单，安全和方便的工艺制造高品质的多源硫属化合物（光活性层），或者能够制造由粗颗粒制成的光活性层 具有良好的组成稳定性和均匀性，精细的结构。 构成：油墨包括复合颗粒，其中第一种硫族金属的第一种硫属化合物和第11族金属的第二种硫属化合物，其熔点低于第一种硫属化合物，在单一颗粒中混合; 和选自12-14族的一个或多于两个的第三种硫属化合物。 一种用于太阳能电池的光敏层的制造方法包括：（i）通过在基板上涂覆油墨来形成涂膜的步骤; 和（ii）通过热处理涂膜，制备11族金属的多源硫属化合物膜和选自12-14族中的一种或多种元素的步骤。
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公开(公告)号：KR1020120117587A
公开(公告)日：2012-10-24
申请号：KR1020110035415
申请日：2011-04-15
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18 , H01L31/0216
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L31/0216 , H01L31/18
Abstract: PURPOSE: A method for manufacturing a Cl(G)S thin film by a Se low temperature deposition heat treatment is provided to obtain a high electric property by densifying the Cl(G)S thin film. CONSTITUTION: Se is deposited on a thin film including Cl(G)S sample heated at 60 to 150 degrees centigrade. A thin film including the Cl(G)S sample with Se is thermally treated at 300 to 600 degrees centigrade. The Cl(G)S sample includes a precursor which is transformed into Cl(G)S materials or Cl(G)S. [Reference numerals] (AA) Depositing Se vapor on the surface and the inner side of Cl(G)S sample including a precursor which is transformed into Cl(G)S materials or Cl(G)S at 60°C~150°C; (BB) Additionally thermally processing Se deposited Cl(G)S sample at 300°C~600°C by controlling steam pressure; (CC) Cooling at room temperature
Abstract translation: 目的：提供通过Se低温沉积热处理制造Cl（G）S薄膜的方法，以通过使Cl（G）S薄膜致密化来获得高电性能。 构成：Se沉积在包括在60至150摄氏度加热的Cl（G）S样品的薄膜上。 包括具有Se的Cl（G）S样品的薄膜在300至600摄氏度下进行热处理。 Cl（G）S样品包括转化为Cl（G）S材料或Cl（G）S的前体。 （AA）在包含前体的Cl（G）S样品的表面和内侧上沉积Se蒸气，其在60℃〜150℃下转化为Cl（G）S材料或Cl（G）S C; （BB）另外通过控制蒸汽压力在300℃〜600℃热处理Se沉积的Cl（G）S样品; （CC）在室温下冷却
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Patent Agency Ranking
公开(公告)号：KR101124226B1
公开(公告)日：2012-03-27
申请号：KR1020110013259
申请日：2011-02-15
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0216
Abstract: PURPOSE: A method for manufacturing a CIS thin film is provided to mass-produce a CuInSe2 photoactive layer with a solution process. CONSTITUTION: A CuInSe2 nano particle is made by using copper amino alkoxide, indium amino alkoxide and selenium powder. A coating layer is formed by coating a molybdenum film of a glass substrate with coating solutions including CuInSe2 nano particles. A CuInSe2 thin film is formed by thermally processing the glass substrate with the coating layer between 300 and 600 degrees centigrade.
Abstract translation: 目的：提供一种用于制造CIS薄膜的方法，以大量生产具有溶液工艺的CuInSe 2光敏层。 构成：使用铜氨基醇盐，铟氨基醇盐和硒粉制成CuInSe2纳米颗粒。 通过用包括CuInSe 2纳米颗粒的涂布溶液涂覆玻璃基板的钼膜来形成涂层。 CuInSe 2薄膜是通过在300〜600摄氏度的涂层之间热处理玻璃基板而形成的。
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27.发明授权
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28.发明公开
公开(公告)号：KR1020110024157A
公开(公告)日：2011-03-09
申请号：KR1020090082043
申请日：2009-09-01
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-(gallium-)selenide(CuIn_xGa_1-xSe_2) nano particles is provided to use carboxylic acid derivative in order to be eco-friendly implemented. CONSTITUTION: A copper complex is prepared by reacting a copper compound and carboxylic acid derivative, represented by chemical formula 1, in an aqueous solvent. A selenium compound is introduced into the copper complex solution, and a copper-selenium complex is prepared. An indium compound is introduced into a copper-selenium complex solution. Copper-indium-(gallium-)selenium nano particles are prepared.
Abstract translation: 目的：提供一种制造低温水性铜铟 - （ - 硒化镓）（CuIn_xGa_1-xSe_2）纳米颗粒的方法，以使用羧酸衍生物进行环保实施。 构成：通过将化合物1表示的铜化合物和羧酸衍生物在水性溶剂中反应制备铜络合物。 将硒化合物引入铜络合物溶液中，并制备铜 - 硒络合物。 将铟化合物引入铜 - 硒络合物溶液中。 制备了铜 - 铟 - （镓）硒纳米颗粒。
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公开(公告)号：KR1020100054300A
公开(公告)日：2010-05-25
申请号：KR1020080113164
申请日：2008-11-14
Applicant: 한국화학연구원
IPC: C01G27/00
Abstract: PURPOSE: A novel hafnium alkoxide compounds and a preparing method thereof are provided, in which compounds are thermally stable, have high volatility, and enhance reactivity with the ozone. CONSTITUTION: A novel hafnium alkoxide compound is represented as the chemical formula 1, HF(OCR^1R^2R^3)_4. In the chemical formula 1, R^1 and R2 are independently the linear or branched alkyl group of C1-C5, R^3 is linear alkenyl or alkynyl group of C2-C5. R^1 and R2 are independently selected from CH_3, C2H5, and CH(CH_3)2 or C(CH_3)3, and R^3 is C≡CH, CH_2C≡CH, CH_2CH_2C≡CH, C≡CCH_3, CH_2C≡CCH_3 or CH_2CH_2C≡CCH_3. The manufacturing method of the hafnium alkoxide compound of the chemical formula 1 is to react hafnium amide compound of the chemical formula 2, Hf(NR^4R^5)_4 and alcohol compound of the chemical formula 3, HOCR^1R^2R^3.
Abstract translation: 目的：提供一种新型的铪醇盐化合物及其制备方法，其中化合物是热稳定的，具有高挥发性，并增强与臭氧的反应性。 构成：一种新的铪醇盐化合物以化学式1表示，HF（OCR 1 R 1 R 2 R 3）4。 在化学式1中，R 1和R 2独立地是C 1 -C 5的直链或支链烷基，R 3是C 2 -C 5的直链烯基或炔基。 R 1和R 2独立地选自CH 3，C 2 H 5和CH（CH 3）2或C（CH 3）3，R 3是C≡CH，CH 2C≡CH，CH 2 CH 2C≡CH，C≡CCH3，CH 2C≡CCH3 或CH 2 CH 2C≡CCH3。 化学式1的铪醇盐化合物的制造方法是使化学式2的铪酰胺化合物，Hf（NR 4 4R 5）4和化学式3的HO化合物HOCR 1 1R 2 2R 3 。
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公开(公告)号：KR1020090076211A
公开(公告)日：2009-07-13
申请号：KR1020080002020
申请日：2008-01-08
Applicant: 한국화학연구원
CPC classification number: C01G11/00 , B82Y30/00 , B82Y40/00 , C01P2004/64
Abstract: A method for manufacturing nano-sized cadmium and cadmium chalcogenide colloid in an organic solvent is provided to show excellent dispersibility in organic solvents, crystalline and purity as well as uniform particle size distribution. A method for manufacturing nano-sized cadmium and cadmium chalcogenide colloid in an organic solvent comprises: a first step of heating a reactant containing cadmium aminoalkoxide compounds in order to transform it to a cadmium-containing nanoparticle; and a second step of separating the obtained cadmium-containing nanoparticle. The reactant containing a precursor material selected among S, Se and Te can be added in the first step and therefore cadmium chalcogenide nanoparticles are obtained.
Abstract translation: 提供了一种在有机溶剂中制造纳米尺寸的镉和镉硫族化物胶体的方法，以显示在有机溶剂中的优异分散性，结晶和纯度以及均匀的粒度分布。 在有机溶剂中制造纳米尺寸的镉和镉硫族化物胶体的方法包括：加热含有氨基喔啉化合物的反应物以便将其转化为含镉纳米颗粒的第一步骤; 以及分离所得到的含镉纳米粒子的第二工序。 可以在第一步骤中加入含有从S，Se和Te中选择的前体材料的反应物，因此得到硫属镉的纳米粒子。
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