公开(公告)号：US20180056470A1

公开(公告)日：2018-03-01

申请号：US15688281

申请日：2017-08-28

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Katsuhiko TOKUSHIGE ,  Suguru OGURA ,  Katsuhide WATANABE ,  Junji KUNISAWA ,  Takeshi IIZUMI ,  Mitsuru MIYAZAKI

IPC: B24B5/35 ,  B08B3/10 ,  B24B57/02 ,  B08B3/08 ,  B08B3/02 ,  C01B15/01 ,  C11D11/00 ,  C11D7/34

CPC classification number: B24B5/35 ,  B08B3/024 ,  B08B3/08 ,  B08B3/10 ,  B24B57/02 ,  C01B15/01 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  C11D7/34 ,  C11D11/0064

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

公开(公告)号：US20170117165A1

公开(公告)日：2017-04-27

申请号：US15128309

申请日：2015-03-17

Applicant: EBARA CORPORATION

Inventor： Junji KUNISAWA ,  Toru MARUYAMA ,  Masayoshi IMAI ,  Koji MAEDA ,  Mitsuru MIYAZAKI ,  Teruaki HOMBO ,  Fujihiko TOYOMASU

IPC: H01L21/67 ,  B08B9/027 ,  B08B3/08 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B9/027 ,  H01L21/02052 ,  H01L21/67046 ,  H01L21/68728

Abstract: The present invention relates to a substrate processing apparatus for processing a substrate, such as a wafer, while supplying a cleaning liquid (e.g. pure water and a liquid chemical) to the substrate, and also relates to a pipe cleaning method for the substrate processing apparatus. The substrate processing apparatus includes: a first cleaning lane including first cleaning units (52), (54) each for cleaning a substrate while supplying pure water to the substrate; a second cleaning lane including second cleaning units (60), (62) each for cleaning a substrate while supplying pure water to the substrate; a first pure-water supply pipe (120) for supplying the pure water to the first cleaning lane; and a second pure-water supply pipe (180) for supplying the pure water to the second cleaning lane.

公开(公告)号：US20160346902A1

公开(公告)日：2016-12-01

申请号：US15167464

申请日：2016-05-27

Applicant: EBARA CORPORATION

Inventor： Naoki TOYOMURA ,  Mitsuru MIYAZAKI ,  Junji KUNISAWA

IPC: B24B57/02 ,  H01L21/306 ,  B24B37/04

CPC classification number: B24B57/02 ,  B24B37/04

Abstract: Provided is a wet substrate processing apparatus for processing a substrate. The apparatus comprises a table for holding a substrate, and a process liquid feeding mechanism for feeding process liquid to the substrate held on the table. The table includes a support face for supporting the substrate, a first opening formed in the support face, a second opening formed in the support face and arranged at least partially around the first opening, a first fluid path configured to extend to the first opening of the support face via the table and be connectable to a vacuum source, and a second fluid path configured to extend to the second opening of the support face via the table and discharge the process liquid.

Abstract translation: 提供了一种用于处理基板的湿式基板处理装置。 该装置包括用于保持基板的工作台和用于将工艺液体供给到保持在工作台上的衬底的工艺液体供给机构。 桌子包括用于支撑基底的支撑面，形成在支撑面上的第一开口，形成在支撑面中并且至少部分地围绕第一开口布置的第二开口，第一流体路径被配置成延伸到第一开口 所述支撑面经由所述工作台并且可连接到真空源，以及第二流体路径，其被配置为经由所述工作台延伸到所述支撑面的所述第二开口并排出所述工艺液体。

公开(公告)号：US20150357208A1

公开(公告)日：2015-12-10

申请号：US14730584

申请日：2015-06-04

Applicant: EBARA CORPORATION

Inventor： Fujihiko TOYOMASU ,  Toru MARUYAMA ,  Junji KUNISAWA

IPC: H01L21/67 ,  B01F3/08 ,  B01F15/00

CPC classification number: H01L21/67051 ,  B01F3/088 ,  H01L21/67017

Abstract: A cleaning chemical supplying device, a cleaning chemical supplying method, and a cleaning unit capable of flexibly handling a change of a dilution ratio and suppression of an increase of a device size are provided.A cleaning chemical supplying device has a first in-line mixer 72 for supplying a first cleaning chemical to a cleaning device 200, a second in-line mixer 73 for supplying a second cleaning chemical to the substrate cleaning device 200, a first chemical CLC box 120 for controlling a flow rate of the first chemical supplied to the first in-line mixer 72, a second chemical CLC box 130 for controlling a flow rate of the second chemical supplied to the second in-line mixer 73, and a DIWCLC box 110 for controlling a flow rate of dilution water supplied to the first in-line mixer 72 or the second in-line mixer 73 and is configured such that a supply destination of the dilution water is switched from the first in-line mixer 72 to the second in-line mixer 73 or from the second in-line mixer 73 to the first in-line mixer 72.

Abstract translation: 提供一种清洁化学品供给装置，清洁化学品供应方法和能够灵活地处理稀释比的变化并抑制装置尺寸增加的清洁单元。 清洗化学品供给装置具有用于将第一清洁化学品供给到清洁装置200的第一在线混合器72，用于向基板清洗装置200供给第二清洗化学品的第二在线混合器73，第一化学CLC箱 120，用于控制供应到第一在线混合器72的第一化学品的流量;第二化学CLC箱130，用于控制供应到第二在线混合器73的第二化学品的流量;以及DIWCLC箱110 用于控制供应到第一在线混合器72或第二在线混合器73的稀释水的流量，并且构造成使得稀释水的供应目的地从第一在线混合器72切换到第二在线混合器72。 在线混频器73或从第二在线混频器73到第一在线混频器72。

公开(公告)号：US20140311532A1

公开(公告)日：2014-10-23

申请号：US14259075

申请日：2014-04-22

Applicant: EBARA CORPORATION

Inventor： Toshio YOKOYAMA ,  Junji KUNISAWA ,  Mitsuru MIYAZAKI ,  Teruaki HOMBO ,  Naoki TOYOMURA

IPC: H01L21/67 ,  H01L21/68 ,  H01L21/677

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68764

Abstract: A substrate processing apparatus has a substrate rotating device 10, 20 for holding and rotating a substrate W, a cleaning device 41 configured to clean a substrate W which is rotated by the substrate rotating device 10, 20 at predetermined rotating speed, a movement device 42 configured to move the cleaning device 41 between a cleaning position P3 and a separate position P2, and a control unit 64. The control unit 64 controls the movement device 42 so that the cleaning device 41 located at the separate position P2 starts moving toward the cleaning position P3 before a rotating speed of the substrate W held by the substrate rotating device 10, 20 reaches the predetermined rotating speed and the cleaning device 41 reaches the cleaning position P3 after a rotating speed of the substrate W reaches the predetermined rotating speed. Therefore, it is possible to improve the throughput in the substrate cleaning step.

Abstract translation: 基板处理装置具有用于保持和旋转基板W的基板旋转装置10,20，被构造成以预定转速清洁基板旋转装置10,20旋转的基板W的清洁装置41，移动装置42 被配置为将清洁装置41移动到清洁位置P3和分离位置P2之间，以及控制单元64.控制单元64控制移动装置42，使得位于分离位置P2的清洁装置41开始朝向清洁 在由基板旋转装置10,20保持的基板W的旋转速度之前的位置P3达到预定转速，并且清洁装置41在基板W的转速达到预定转速之后到达清洁位置P3。 因此，可以提高基板清洗工序的生产量。