公开(公告)号：US20250112443A1

公开(公告)日：2025-04-03

申请号：US18899846

申请日：2024-09-27

Applicant: Epistar Corporation

Inventor： Po-Chou PAN ,  Chen OU ,  Shih-Chang LEE ,  Wei-Chih PENG ,  Yao-Ru CHANG ,  Hao-Chun LIANG

IPC: H01S5/11 ,  H01S5/042

Abstract: An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.

公开(公告)号：US20240274766A1

公开(公告)日：2024-08-15

申请号：US18641195

申请日：2024-04-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20240222538A1

公开(公告)日：2024-07-04

申请号：US18608216

申请日：2024-03-18

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

公开(公告)号：US20240113262A1

公开(公告)日：2024-04-04

申请号：US18241471

申请日：2023-09-01

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Jhih-Yong YANG ,  Chen OU ,  Cheng-Lin LU

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/14 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/145 ,  H01L33/62

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the platform area on a horizontal plane is A1, and a sum of areas of the projections of the platform area and the depression area on the horizontal plane is A2, and a ratio of A1/A2 ranges from 50%-80%.

公开(公告)号：US20230317898A1

公开(公告)日：2023-10-05

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20220173292A1

公开(公告)日：2022-06-02

申请号：US17456858

申请日：2021-11-29

Applicant: EPISTAR CORPORATION

Inventor： Ching-Hsing SHEN ,  Wen-Luh LIAO ,  Chen OU ,  Shih-Chang LEE ,  Hui-Fang KAO ,  Yun-Chung CHOU

IPC: H01L33/62

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a mesa region and a lower region; a first pad on the lower region and a second pad on the mesa region; a first contact between the epitaxial stack and the first pad; a passivation structure covering the epitaxial stack and including a first opening; and a first metal structure in the first opening and disposed between the first contact and the first pad; wherein the first metal structure includes a first top surface away from the epitaxial stack, and the passivation structure including a second top surface at a position corresponding to the lower region and away from the epitaxial stack, and a first height difference between the first top surface and the second top surface is less than 3 μm and larger than zero; and wherein the first metal structure includes a first width adjacent to the first contact and a second width adjacent to the first pad, and the second width is larger than the first width.

公开(公告)号：US20210408311A1

公开(公告)日：2021-12-30

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC: H01L31/055 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/12 ,  H01L25/16 ,  H01L31/101

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20210343906A1

公开(公告)日：2021-11-04

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/46 ,  H01L33/60 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20200020839A1

公开(公告)日：2020-01-16

申请号：US16579218

申请日：2019-09-23

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US20190027643A1

公开(公告)日：2019-01-24

申请号：US16143573

申请日：2018-09-27

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/02 ,  H01L21/784 ,  H01L33/22 ,  H01L33/62 ,  H01L21/78

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.