LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20180337313A1

    公开(公告)日:2018-11-22

    申请号:US16047734

    申请日:2018-07-27

    Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer, a light pervious element and a light-reflecting enclosure. The light-emitting element includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element, and includes a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a recess structure and an outer wall. The light-reflecting enclosure surrounds the outer wall. The D50 of the wavelength conversion particles is not great than 10 μm. The recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

    PIXEL STRUCTURE AND DISPLAY DEVICE USING THE SAME

    公开(公告)号:US20240421277A1

    公开(公告)日:2024-12-19

    申请号:US18741956

    申请日:2024-06-13

    Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and the common conductive structure.

    SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240420988A1

    公开(公告)日:2024-12-19

    申请号:US18740907

    申请日:2024-06-12

    Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive portion, and a second adhesive portion. The first semiconductor device and the second semiconductor device are separately arranged on the carrier. The first adhesive portion and the second adhesive portion are separately arranged on the carrier, the first adhesive portion is located between the first semiconductor device and the carrier, and the second adhesive portion is located between the second semiconductor device and the carrier. In the cross-sectional view, the first adhesive portion includes an inclined sidewall, and the inclined sidewall is adjacent to the carrier and forms an interior angle greater than 90 degrees to the carrier.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220328734A1

    公开(公告)日:2022-10-13

    申请号:US17850549

    申请日:2022-06-27

    Abstract: A light-emitting device comprises a light-emitting element, a covering structure, a quantum dot material block, and an adhesive structure is disclosed. The covering structure has a depressed part. The quantum dot material block is filled into the depressed part and enclosed by the light-emitting element and the covering structure. The light-emitting element, the covering structure, and the quantum dot material block are bonded together through the adhesive structure. Since the quantum dot material block is enclosed by the covering structure and the light-emitting element, the outer moisture and oxygen are blocked by the covering structure and the light-emitting element from the quantum dot material block, the decreasing emitting efficiency of the quantum dot material is further alleviated.

    THIN LIGHT-EMITTING DIODE PACKAGE
    27.
    发明申请

    公开(公告)号:US20210050478A1

    公开(公告)日:2021-02-18

    申请号:US16539539

    申请日:2019-08-13

    Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    29.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    发光装置及其制造方法

    公开(公告)号:US20170077364A1

    公开(公告)日:2017-03-16

    申请号:US15260469

    申请日:2016-09-09

    Abstract: A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. The distance between the top surface and the bottom surface has a first height (h1). The wavelength conversion layer has a first area (A1) located on the top surface of the light-emitting element and a second area (A2) located on the side surfaces and surrounding the first area. The first area has a second height (h2). The second area has a third height (h3) and a second width (w2). The second height (h2) is greater than the second width (w2). The difference of the third height and the sum of the first height and the second height is less than 15 μm.

    Abstract translation: 发光装置包括发光元件和波长转换层。 发光元件具有顶表面,底表面,侧表面和形成在底表面上的第一电触点。 顶表面和底表面之间的距离具有第一高度(h1)。 波长转换层具有位于发光元件顶表面上的第一区域(A1)和位于侧表面上且围绕第一区域的第二区域(A2)。 第一个区域有第二个高度(h2)。 第二区域具有第三高度(h3)和第二宽度(w2)。 第二高度(h2)大于第二宽度(w2)。 第一高度和第二高度的第三高度和总和的差小于15μm。

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