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    GAS DISCHARGE DISPLAY PANEL FABRICATION
    23.
    发明专利
    GAS DISCHARGE DISPLAY PANEL FABRICATION 未知

    公开(公告)号：CA1051507A

    公开(公告)日：1979-03-27

    申请号：CA255965

    申请日：1976-06-29

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  PARK KYU C ,  REISMAN ARNOLD

    IPC: H01J9/385 ,  H01J9/26 ,  H01J9/395 ,  H01J9/40 ,  H01J17/16 ,  H01J9/38

    Abstract: GAS DISCHARGE DISPLAY PANEL FABRICATION An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300.degree.C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.

    GLASS FABRICATION PROCESS
    25.
    发明专利
    GLASS FABRICATION PROCESS 未知

    公开(公告)号：CA1016193A

    公开(公告)日：1977-08-23

    申请号：CA195120

    申请日：1974-03-15

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  REISMAN ARNOLD

    IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10

    Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

    26.
    发明专利
    未知

    公开(公告)号：DE2628819A1

    公开(公告)日：1977-01-27

    申请号：DE2628819

    申请日：1976-06-26

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  PARK KYU CHANG ,  REISMAN ARNOLD

    IPC: H01J9/385 ,  H01J9/26 ,  H01J9/395 ,  H01J9/40 ,  H01J17/16 ,  H01J61/92

    Abstract: An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300 DEG C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.

    27.
    发明专利
    未知

    公开(公告)号：DE1519812B1

    公开(公告)日：1971-04-01

    申请号：DE1519812

    申请日：1965-08-17

    Applicant: IBM

    Inventor： REISMAN ARNOLD ,  BERKENBLIT MELVIN ,  ALYANAKYAN SATENIK ALIN

    IPC: C22B41/00 ,  C23C16/14 ,  C30B25/02 ,  B01J17/32

    Abstract: Semi-conductor material, particularly Ge, is epitaxially deposited on a substrate by reacting the material with a hydrogen-inert gas-halide mixture to produce compounds thereof in the vapour phase and perturbing the equilibrium of this vapour phase by introducing a perturbing gas, such as hydrogen or a mixture of hydrogen and an inert gas, to produce the required deposition. As shown, Ge source material is packed within a tube 11 placed in a furnace 14 kept at 500-900 DEG C. (preferably 600 DEG C.). A mixture of HI and He is passed through the tube 11 to produce a vaporous mixture containing GeI2 which passes out through a nozzle 16 into a deposition chamber 17 held at 350 DEG C. H2, with or without He, is passed into the deposition chamber through a coaxial nozzle 18 to perturb the equilibrium and cause epitaxial deposition on a Ge substrate in a quartz boat 26.

    29.
    发明专利
    未知

    公开(公告)号：DE1195276B

    公开(公告)日：1965-06-24

    申请号：DEJ0022931

    申请日：1962-12-27

    Applicant: IBM

    Inventor： REISMANN ARNOLD ,  BERKENBLIT MELVIN

    IPC: B01J10/00 ,  C01B19/00 ,  C01B25/06 ,  C01G1/12 ,  C22C1/00 ,  C22C1/02 ,  C22C1/04 ,  H01L21/00

    Abstract: A binary compound XY is formed by mixing two exothermic reacting elements X and Y together and heating to above the melting point of the element X having the higher melting point; X being of particle size, e.g. less than 44 m , such that it is all consumed. One of the elements may be from Group IIb (Zn, Cd, Hg) or IIIB (Ga, In, T1) and the other from VB (P, As, Sb) or VIb (S, Se, Te). Particles of Y may be 1/8 -inch, or the same size as X. A metallic element, e.g. Cd, may be used with an oxide coating, or this may be removed by treating with concentrated aqueous ammonia, washing, and drying in air or vacuum at 100 DEG C., or by reducing in H2 at 200 DEG C. The mixture of X and Y is placed in an ampoule which is evacuated or filled with an inert gas and sealed, then heated at 0.1 to 5 DEG C. per min. to 5-100 DEG C. above the melting point of X and cooled slowly or by air quenching. The product may be ground and the heating cycle repeated.

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