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    21.
    发明专利
    未知

    公开(公告)号：DE10318422A1

    公开(公告)日：2004-11-25

    申请号：DE10318422

    申请日：2003-04-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BOECK JOSEF ,  MEISTER THOMAS ,  SCHAEFER HERBERT ,  STENGL REINHARD

    IPC: H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/732

    Abstract: A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.

    22.
    发明专利
    未知

    公开(公告)号：DE10250204A1

    公开(公告)日：2004-05-13

    申请号：DE10250204

    申请日：2002-10-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STENGL REINHARD ,  MEISTER THOMAS ,  SCHAEFER HERBERT ,  BOECK JOSEF ,  SECK MARTIN ,  LACHNER RUDOLF

    IPC: H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/08 ,  H01L29/732

    Abstract: A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.

    24.
    发明专利
    未知

    公开(公告)号：DE10004111A1

    公开(公告)日：2001-08-09

    申请号：DE10004111

    申请日：2000-01-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BOECK JOSEF ,  AUFINGER KLAUS ,  ZEILER MARKUS

    IPC: H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732 ,  H01L29/73

    Abstract: Disclosed is a bipolar transistor (10) . By optimizing the layout, the product of the base collector capacity and the resistance of the collector can be reduced, thereby improving decisive transistor parameters. The bipolar transistor (10) comprises an emitter (E) (20) which is composed of several emitter elements (22,25, 26), several base contacts (B) (40,41) and several collector contacts (C) (50), said elements being used to form transistor layouts arranged according to a certain order. According to the invention, the emitter (20) has at least one closed configuration (21). The at least one emitter configuration (21) defines at least one inner emitter area (27) which can be subdivided into several partial areas (28). At least one of the base contacts (41) is arranged inside (27) the emitter. At least one other base contact (40) and the collector contacts (50) are arranged outside the emitter configuration (21).

    Bauelement mit einer ringförmigen Metallstruktur und Verfahren
    26.
    发明专利
    Bauelement mit einer ringförmigen Metallstruktur und Verfahren 未知

    公开(公告)号：DE102010036978B4

    公开(公告)日：2014-09-11

    申请号：DE102010036978

    申请日：2010-08-13

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LACHNER RUDOLF ,  BOECK JOSEF ,  AUFINGER KLAUS ,  KNAPP HERBERT

    IPC: H01L23/367 ,  H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L23/433 ,  H01L23/50

    Abstract: Bauelement (100), umfassend: einen Halbleiterchip (10), der ein Halbleitersubstrat (21) und eine ringförmige Metallstruktur (11) umfasst, die sich entlang einer Außenlinie (12) einer ersten Hauptoberfläche (13) des Halbleiterchips (10) erstreckt, wobei die ringförmige Metallstruktur (11) mehrere übereinander angeordnete und durch Vias miteinander gekoppelte Metallschichten umfasst, wobei die unterste Metallschicht über ein Via an das Halbleitersubstrat (21) gekoppelt ist, einen Kapselungskörper (14), der den Halbleiterchip (10) kapselt und eine zweite Hauptoberfläche (15) definiert, und ein Array von externen Kontaktpads (16), die an der zweiten Hauptoberfläche (15) des Kapselungskörpers (14) befestigt sind, wobei mindestens ein externes Kontaktpad (16) des Arrays von externen Kontaktpads (16) über eine oberhalb des Halbleiterchips (10) angeordnete Metallschicht (18) elektrisch an die oberste Metallschicht der ringförmigen Metallstruktur (11) gekoppelt ist.

    29.
    发明专利
    未知

    公开(公告)号：DE10318422B4

    公开(公告)日：2006-08-10

    申请号：DE10318422

    申请日：2003-04-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BOECK JOSEF ,  MEISTER THOMAS ,  SCHAEFER HERBERT ,  STENGL REINHARD

    IPC: H01L29/732 ,  H01L21/331 ,  H01L29/08 ,  H01L29/417

    Abstract: A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.

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