公开(公告)号：DE10253626A1

公开(公告)日：2004-06-03

申请号：DE10253626

申请日：2002-11-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLLER KLAUS ,  WENZEL ROLAND

IPC: H01L23/544 ,  G01R31/28 ,  H01L21/66 ,  H01L23/528

Abstract: Additional planar structures are arranged closely adjacent to each other around a via (4) or contact hole and the corresponding conductive track (2), within the uppermost and/or the underlying conductive track (2) of the metallization plane. The structures are dummy structures with or without circuit functions, e.g. dummy tracks.

公开(公告)号：DE10142690A1

公开(公告)日：2003-03-27

申请号：DE10142690

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLLER KLAUS

IPC: H01L21/768 ,  H01L21/8249 ,  H01L23/485 ,  H01L23/528 ,  H01L27/06 ,  H01L29/417 ,  H01L21/8248

公开(公告)号：DE50313644D1

公开(公告)日：2011-06-01

申请号：DE50313644

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHMANN JENS ,  FOESTE BERND ,  GOLLER KLAUS ,  KRIZ JAKOB

IPC: H01L27/08

公开(公告)号：DE102010017109A1

公开(公告)日：2010-12-09

申请号：DE102010017109

申请日：2010-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ALLERS KARL-HEINZ ,  BOECK JOSEF ,  GOLLER KLAUS ,  LACHNER RUDOLF ,  LIEBL WOLFGANG

IPC: H01L27/08 ,  H01L21/768 ,  H01L23/52 ,  H01L29/92

公开(公告)号：DE50312856D1

公开(公告)日：2010-08-12

申请号：DE50312856

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHMANN JENS ,  FOESTE BERND ,  GOLLER KLAUS ,  KRIZ JAKOB

IPC: H01L27/08

公开(公告)号：DE102004014676B4

公开(公告)日：2009-05-14

申请号：DE102004014676

申请日：2004-03-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEITZSCH OLAF ,  GOLLER KLAUS ,  NICHTERWITZ MARION

IPC: H01L23/544 ,  G03F9/00

公开(公告)号：DE10344605B4

公开(公告)日：2008-09-18

申请号：DE10344605

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WENZEL ROLAND ,  GOLLER KLAUS

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H05K1/11

Abstract: An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.

公开(公告)号：DE10305365B4

公开(公告)日：2005-02-10

申请号：DE10305365

申请日：2003-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWALBE GRIT ,  GOLLER KLAUS ,  REB ALEXANDER

IPC: H01L21/768 ,  H01L23/485 ,  H01L21/283 ,  H01L21/336 ,  H01L21/331

Abstract: A contact hole is provided in an insulating layer over a substrate surface. The contact hole is filled with a conductive material and a second insulating layer is provided on the first insulating layer and the filled contact hole. An etching mask is used to etch a first recess to expose the conductive material filling the contact hole, and a second recess through the two insulating layers to expose a connection surface. A conductive material is placed in the two recesses to form two contact terminals. An independent claim is included for a device for contacting substrate connections.

公开(公告)号：DE10236890A1

公开(公告)日：2004-03-04

申请号：DE10236890

申请日：2002-08-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLLER KLAUS

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/768 ,  H01L27/08 ,  H01L21/822