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公开(公告)号:DE10010456A1
公开(公告)日:2001-09-20
申请号:DE10010456
申请日:2000-03-03
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KANDOLF HELMUT , ROEHR THOMAS , HOENIGSCHMID HEINZ , LAMMERS STEFAN
Abstract: The reference voltage generation device uses reference cells (R1T,R2T ; R1C,R2C) within the ferroelectric memory provided with a logic "0" and a logic "1", at the ends of the word lines (WLT,WLC) along a reference bit line (BLTREF1, BLTREF2 ; BLCREF1,BLCREF2). The ferroelectric memory may be provided via a MOS technology, with a pulsed plate parallel to the bit line for providing a selective-read memory, with a reference or dummy cell at the end of each word line.
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公开(公告)号:DE10005619A1
公开(公告)日:2001-08-30
申请号:DE10005619
申请日:2000-02-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HOENIGSCHMID HEINZ , ESTERL ROBERT , KANDOLF HELMUT , ROEHR THOMAS
IPC: G11C11/22 , H01L21/8246 , H01L27/105
Abstract: An integrated semiconductor memory has memory cells with a ferroelectric memory property. The memory cells are in each case connected between a column line and a charge line. The column line is connected to a read amplifier which supplies an output signal. The charge line is connected to a driver circuit which provides the charge line with a given potential. In an inactive mode, the column line and the charge line are jointly connected to a connection for a common supply potential in the read amplifier or in the driver circuit. As a result, a relatively quick equalization of a potential between the lines is possible. Thus, unintended changes in the memory cell content due to interfering voltages are avoided.
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公开(公告)号:DE10102351B4
公开(公告)日:2007-08-02
申请号:DE10102351
申请日:2001-01-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KANDOLF HELMUT , LAMMERS STEFAN , HOENIGSCHMID HEINZ
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公开(公告)号:DE10146491B4
公开(公告)日:2006-04-13
申请号:DE10146491
申请日:2001-09-21
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KANDOLF HELMUT , BRAUN GEORG
IPC: H04L25/06 , H03K19/00 , H03K19/0175 , H04B3/04 , H04L12/40
Abstract: An electronic circuit has a driver circuit to drive a signal onto a signal line. The driver circuit contains a first switching device with a first forward resistance between a first supply voltage terminal and the signal line, and a second switching device with a second forward resistance between a second supply voltage terminal and the signal line. A control circuit is provided to generate a first and a second control signal to control the first and second switching devices in a first operating mode such that, depending on the signal which is to be driven, either the first switching device or the second switching device is through-connected. In a second operating mode, the first switching device and the second switching device are essentially through-connected with the aid of the first and second control signals so that the first and second forward resistances together form a terminating resistance.
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公开(公告)号:DE10011180B4
公开(公告)日:2006-02-23
申请号:DE10011180
申请日:2000-03-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BOEHM THOMAS , MANYOKI ZOLTAN , LAMMERS STEFAN , KANDOLF HELMUT
Abstract: A digital circuit configuration includes a memory matrix having M rows and N columns and P
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公开(公告)号:DE10017368B4
公开(公告)日:2005-12-15
申请号:DE10017368
申请日:2000-04-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ROEHR THOMAS , ESTERL ROBERT , HOENIGSCHMID HEINZ , KANDOLF HELMUT
Abstract: A description is given of a method for operating an integrated memory which has memory cells each having a selection transistor and a storage capacitor with a ferroelectric storage effect. The memory contains a plate line, which is connected to one of the column lines via a series circuit containing a selection transistor and a storage capacitor of respective memory cells. A memory access is carried out according to the "pulsed plate concept". In this case, the temporal sequence is controlled in such a way that, in an access cycle, the storage capacitor of the memory cell to be selected is in each case charged and discharged by the same amount. An attenuation or destruction of the information stored in the memory cells, which is caused by source-drain leakage currents of unactivated selection transistors, is thus avoided.
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公开(公告)号:DE10328658A1
公开(公告)日:2005-02-10
申请号:DE10328658
申请日:2003-06-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KALMS SVEN , KANDOLF HELMUT
Abstract: One embodiment of the invention provides a hub chip comprising: an address bus input for receiving a plurality of successively sent portions of address and/or command data, a shift register which has register elements and is connected to the address bus input to receive the plurality of portions of the address and/or command data, the shift register being connected to the address bus input so that, when the address and/or command data are received, the portions of the address and/or command data are successively written to the register elements, an address bus output for outputting the received address and/or command data, a memory module interface for connecting one or more memory modules, where the hub chip addresses none, one or a plurality of the connected memory modules, depending on the address and/or command data transferred, and a driver element provided to output the received portion of the address and/or command data to the address bus output before all of the portions of the address and/or command data have been received in full.
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公开(公告)号:DE50104863D1
公开(公告)日:2005-01-27
申请号:DE50104863
申请日:2001-06-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FISCHER HELMUT , KANDOLF HELMUT , LAMMERS STEFAN
Abstract: The invention relates to a configuration for implementing redundancy for a memory chip, in which a fuse bank is connected to a comparator via a redundancy predecoder so that predecoded addresses can be compared with one another in the comparator and undecoded addresses can be stored in the fuse bank. This provides for a low-power and space-saving design.
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公开(公告)号:DE10123593C2
公开(公告)日:2003-03-27
申请号:DE10123593
申请日:2001-05-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HOENIGSCHMID HEINZ , KANDOLF HELMUT , LAMMERS STEFAN
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L27/22 , G11C11/14
Abstract: A magnetic memory configuration stores data and avoids ageing effects. The memory configuration contains a cell array containing magnetic memory cells disposed along a first direction and a second direction crossing the former, a multiplicity of electrical lines along the first direction, and a multiplicity of electrical lines along the second direction. The magnetic memory cells in each case are disposed at crossover points of the electrical lines. A first current supply device supplies respectively selected electrical lines along the first direction with current. A second current supply device supplies respectively selected electrical lines along the second direction with current. The second current supply device is configured for setting the direction of the current in accordance with an information item to be written. The first current supply device is suitable for changing over the direction of the current as desired.
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公开(公告)号:DE10123593A1
公开(公告)日:2002-11-28
申请号:DE10123593
申请日:2001-05-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HOENIGSCHMID HEINZ , KANDOLF HELMUT , LAMMERS STEFAN
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L27/22
Abstract: The arrangement has a field of magnetic memory cells along two mutually perpendicular directions, electrical conductors along both directions with memory cells at the intersection points, first and second current supplies for selectively supplying leads in the first and second directions respectively, whereby the second supply device sets the current direction according to information to be written. The first device changes the current direction. The arrangement has a cell field of magnetic memory cells arranged along first and second mutually perpendicular directions, electrical conductors (3a-3d;4a-4d) along both directions with magnetic memory cells (5aa-5dd) at the intersection points of the conductors, first and second current supplies (6,7) for selectively supplying leads in the first and second directions respectively, whereby the second supply device sets the current direction according to information to be written. The first current supply device changes the direction of the current. AN Independent claim is also included for the following: a magnetic memory cell.
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