公开(公告)号：DE102009023396A1

公开(公告)日：2009-12-17

申请号：DE102009023396

申请日：2009-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L23/04 ,  H01L21/56 ,  H01L23/482

Abstract: A semiconductor device includes a semiconductor chip and at least one metal line over a first side of the semiconductor chip. The semiconductor device includes a molded body covering at least a second side of the semiconductor chip. The molded body includes at least one recess.

公开(公告)号：DE102008051443A1

公开(公告)日：2009-07-02

申请号：DE102008051443

申请日：2008-10-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  SOMMER GRIT ,  PLIENINGER RALF

IPC: H01L29/92 ,  H01L21/60 ,  H01L23/535 ,  H01L25/16 ,  H01L27/08

公开(公告)号：DE102008047416A1

公开(公告)日：2009-04-16

申请号：DE102008047416

申请日：2008-09-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L23/50 ,  H01L21/60

Abstract: This application relates to a semiconductor device comprising a semiconductor chip, a molded body covering the semiconductor chip, wherein the molded body comprises an array of molded structure elements, and first solder elements engaged with the molded structure elements.

公开(公告)号：DE102004021391B4

公开(公告)日：2008-10-02

申请号：DE102004021391

申请日：2004-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/336 ,  H01L21/762 ,  H01L21/763 ,  H01L27/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78

公开(公告)号：DE102006058068A1

公开(公告)日：2008-06-12

申请号：DE102006058068

申请日：2006-12-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  WAIDHAS BERND ,  BRUNNBAUER MARKUS ,  SOMMER GRIT ,  WAGNER THOMAS

IPC: H01L25/16 ,  H01L23/50

Abstract: A semiconductor component includes a semiconductor chip, and a passive component, with the semiconductor component including a coil as the passive component. The semiconductor chip and the passive component are embedded in a plastic encapsulation compound with connection elements to external contacts.

公开(公告)号：DE102006005645A1

公开(公告)日：2007-03-29

申请号：DE102006005645

申请日：2006-02-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WOLLANKE ALEXANDER ,  DOBRITZ STEPHAN ,  MEYER THORSTEN

IPC: H01L21/50 ,  H01L25/065

Abstract: The present invention generally relates to a method for fabricating a stackable packaged device and a method for producing a packaged device stack utilizing stackable packaged devices. The present invention further refers to a stackable packaged device and a packaged device stack.

公开(公告)号：SG129252A1

公开(公告)日：2007-02-26

申请号：SG200304497

申请日：2003-08-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L21/027 ,  H01L21/50 ,  H01L21/60 ,  H01L23/485 ,  H01L23/498

Abstract: The present invention provides a method for producing a semiconductor device, with the steps of: applying an interconnect level (11, 12) to a semiconductor substrate (10); structuring the interconnect level (12); and applying a solder layer (13) on the structured interconnect level (11, 12) in such a way that the solder layer

公开(公告)号：DE10345395B4

公开(公告)日：2006-09-14

申请号：DE10345395

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  IRSIGLER ROLAND

IPC: H01L23/50 ,  H01L23/14 ,  H01L23/29 ,  H01L23/31 ,  H01L23/485 ,  H01L23/498 ,  H01L27/108

公开(公告)号：DE102004052610A1

公开(公告)日：2006-05-04

申请号：DE102004052610

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L29/78 ,  H01L29/06

Abstract: Semiconductor volume (2) of power transistor (20) contains several transistor cells in parallel, under which is buried lateral, highly conductive semiconductive layer (4). Buried layer can be contacted from top side of transistor by at least one terminal (29). At least one terminal is formed within trench (24), extending from top side of transistor towards buried layer. Preferably, trench transistor with gate electrode (26) in at least one trench for switching of power transistor, with terminal of buried layer in at least one trench. Independent claims are included for method for forming power transistor.

公开(公告)号：DE102004045467A1

公开(公告)日：2006-03-30

申请号：DE102004045467

申请日：2004-09-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  KRISCHKE NORBERT ,  MEYER THORSTEN

IPC: H01L29/78 ,  H01L23/62