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    22.
    发明专利
    未知

    公开(公告)号：DE10328008B4

    公开(公告)日：2008-04-03

    申请号：DE10328008

    申请日：2003-06-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DREXL STEFAN ,  SECK MARTIN ,  BOETTNER THOMAS ,  HUTTNER THOMAS

    IPC: H01L27/082 ,  H01L21/8228 ,  H01L29/417

    Abstract: An explanation is given of, inter alia, an integrated circuit arrangement ( 100 ) containing an npn transistor ( 102 ) and a pnp transistor ( 104 ). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout ( 142 ) for an edge terminal region ( 120 ) and if the edge terminal region ( 120 ) has a part near the substrate which is arranged in the cutout ( 142 ) and a part remote from the substrate which is arranged outside the cutout ( 142 ) and overlaps the base terminal region ( 139 ).

    23.
    发明专利
    未知

    公开(公告)号：DE102005045060B4

    公开(公告)日：2007-07-05

    申请号：DE102005045060

    申请日：2005-09-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

    IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08

    Abstract: The substrate (20) integrates semiconductor components. There are three circuit planes. These are designated close, intermediate or remote, with respect to the substrate, i.e. their spacing from the substrate increases with each layer. Each circuit plane contains a planar base surface and a planar covering surface adjoining a dielectric. The base surface of the circuit plane remote from the substrate (76), extends in a plane occupied by the covering surface of the intermediate circuit plane. Alternatively the base surface of the circuit plane remote from the substrate, extends in a plane lying closer to the substrate than a plane occupied by the covering surface of the intermediate circuit plane. In addition, the base surface of the intermediate circuit plane extends in a plane occupied by the covering surface of the circuit plane near the substrate. Alternatively the base surface of the intermediate circuit plane extends in a plane closer to the substrate than that occupied by the covering surface of the circuit plane close to the substrate. Circuit elements in the structure are further elaborated. A component formed by the elements (A-G), comprises one, two or more windings of a coil, a side wall of a coaxial line or parts of a condenser exceeding 10 mu m or 50 mu m in length. Salient features include use of aluminum or copper to form the tracks (34-38), at 60 atom% concentrations. They form internal conductors of the circuit (10). An even more remote conductive structure is included. One or more further circuit planes are included between the substrate and the circuit plane closest to it. An independent claim is also included for the method of manufacture.

    27.
    发明专利
    未知

    公开(公告)号：DE10337569A1

    公开(公告)日：2005-03-24

    申请号：DE10337569

    申请日：2003-08-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HELNEDER JOHANN ,  GOEBEL THOMAS ,  SCHWERD MARKUS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  SECK MARTIN ,  DREXL STEFAN ,  KLEIN WOLFGANG ,  HOMMEL MARTINA

    IPC: H01L23/485 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

    Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

    28.
    发明专利
    未知

    公开(公告)号：DE10328008A1

    公开(公告)日：2005-02-03

    申请号：DE10328008

    申请日：2003-06-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DREXL STEFAN ,  SECK MARTIN ,  BOETTNER THOMAS ,  HUTTNER THOMAS

    IPC: H01L21/8228 ,  H01L27/082 ,  H01L29/417 ,  H01L21/331

    Abstract: An explanation is given of, inter alia, an integrated circuit arrangement ( 100 ) containing an npn transistor ( 102 ) and a pnp transistor ( 104 ). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout ( 142 ) for an edge terminal region ( 120 ) and if the edge terminal region ( 120 ) has a part near the substrate which is arranged in the cutout ( 142 ) and a part remote from the substrate which is arranged outside the cutout ( 142 ) and overlaps the base terminal region ( 139 ).

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