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    3.
    发明专利
    未知

    公开(公告)号：DE102006040585A1

    公开(公告)日：2008-03-20

    申请号：DE102006040585

    申请日：2006-08-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HELNEDER JOHANN

    IPC: H01L21/768

    Abstract: Method for filling a trench in a semiconductor product is disclosed. A first material is deposited onto a semiconductor product having a surface in which at least one trench is formed. A first layer is formed within the trench and on the surface of the semiconductor product outside the trench. A second material is deposited to form a second layer above the first layer outside the trench and the trench is filled. Chemical mechanical polishing is performed so that the second layer is removed above the first layer outside the trench and whereby the first layer is at least uncovered outside the trench. Residual first material of the first layer is removed by wet-chemical etching.

    5.
    发明专利
    未知

    公开(公告)号：DE10337569A1

    公开(公告)日：2005-03-24

    申请号：DE10337569

    申请日：2003-08-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HELNEDER JOHANN ,  GOEBEL THOMAS ,  SCHWERD MARKUS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  SECK MARTIN ,  DREXL STEFAN ,  KLEIN WOLFGANG ,  HOMMEL MARTINA

    IPC: H01L23/485 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

    Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

    7.
    发明专利
    未知

    公开(公告)号：DE10341059A1

    公开(公告)日：2005-04-14

    申请号：DE10341059

    申请日：2003-09-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HELNEDER JOHANN ,  SCHWERD MARKUS ,  GOEBEL THOMAS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  SECK MARTIN ,  TORWESTEN HOLGER

    IPC: H01L21/02 ,  H01L21/316 ,  H01L23/522 ,  H01L27/01 ,  H01L27/08 ,  H01L21/822 ,  H01G9/042

    Abstract: An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

    Producing metal layer, used in semiconductor technology and manufacture of integrated circuits, involves electrochemical growth of metal on substrate
    9.
    发明专利
    Producing metal layer, used in semiconductor technology and manufacture of integrated circuits, involves electrochemical growth of metal on substrate 未知

    公开(公告)号：DE10043560A1

    公开(公告)日：2002-03-28

    申请号：DE10043560

    申请日：2000-09-01

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HELNEDER JOHANN

    IPC: C25D21/12 ,  G01N27/00

    Abstract: Method for producing a metal layer by electrochemical growth of the metal on a substrate comprises assigning a measuring head to the substrate on which the metal is deposited by electrochemical growth. The measuring head is on the side facing the metal with structures filled by deposition of the metal, and its characteristics vary as a function of the degree of filling of the metal in the structures. An Independent claim is also included for a device used for producing a metal layer by electrochemical growth of the metal on a substrate. Preferred Features: The measuring head is structurally combined with the substrate or forms the substrate. The measuring head is formed by a piezoelectric quartz (5) whose oscillating circuit characteristics vary as a function of the degree of filling. The measuring head is coated with platinum and the electrochemically deposited metal is copper.

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