公开(公告)号：JP2007116135A

公开(公告)日：2007-05-10

申请号：JP2006255789

申请日：2006-09-21

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： HOMMEL MARTINA ,  KOERNER HEINRICH ,  SCHWERD MARKUS ,  SECK MARTIN

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04

CPC classification number: H01L23/5227 ,  H01L23/5223 ,  H01L23/5225 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit structure having a metal wiring opening up the possibilities of new applications such as an improvement in electrical characteristics such as a conformity to a reduction in the resistance of a conductive path and an increase in current requirements, especially the manufacture of passive components having good electrical characteristics, and provide its manufacturing method.
SOLUTION: An integrated circuit structure 10 including at least three conductive structure levels 28, 42 and 52 with elongate conductive paths 34 and 48 arranged is manufactured by a single damascene. Thereby, via levels conventionally used are omitted, and various technical effects and the possibilities of new applications are produced.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种集成电路结构，其具有开放新应用的可能性的金属布线，例如改善电特性，例如与导电路径的电阻降低一致的增加 目前的要求，特别是具有良好电气特性的无源部件的制造，并提供其制造方法。 解决方案：包括具有布置的细长导电路径34和48的至少三个导电结构层28,22和52的集成电路结构10由单个镶嵌制造。 由此，省去了常规使用的通孔，并且产生了各种技术效果和新应用的可能性。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE102005045056A1

公开(公告)日：2007-03-29

申请号：DE102005045056

申请日：2005-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08

公开(公告)号：DE102005045059B4

公开(公告)日：2011-05-19

申请号：DE102005045059

申请日：2005-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08

公开(公告)号：DE10337569B4

公开(公告)日：2008-12-11

申请号：DE10337569

申请日：2003-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  GOEBEL THOMAS ,  SCHWERD MARKUS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  SECK MARTIN ,  DREXL STEFAN ,  KLEIN WOLFGANG ,  HOMMEL MARTINA

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

公开(公告)号：DE102005045060A1

公开(公告)日：2007-03-22

申请号：DE102005045060

申请日：2005-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08

Abstract: The substrate (20) integrates semiconductor components. There are three circuit planes. These are designated close, intermediate or remote, with respect to the substrate, i.e. their spacing from the substrate increases with each layer. Each circuit plane contains a planar base surface and a planar covering surface adjoining a dielectric. The base surface of the circuit plane remote from the substrate (76), extends in a plane occupied by the covering surface of the intermediate circuit plane. Alternatively the base surface of the circuit plane remote from the substrate, extends in a plane lying closer to the substrate than a plane occupied by the covering surface of the intermediate circuit plane. In addition, the base surface of the intermediate circuit plane extends in a plane occupied by the covering surface of the circuit plane near the substrate. Alternatively the base surface of the intermediate circuit plane extends in a plane closer to the substrate than that occupied by the covering surface of the circuit plane close to the substrate. Circuit elements in the structure are further elaborated. A component formed by the elements (A-G), comprises one, two or more windings of a coil, a side wall of a coaxial line or parts of a condenser exceeding 10 mu m or 50 mu m in length. Salient features include use of aluminum or copper to form the tracks (34-38), at 60 atom% concentrations. They form internal conductors of the circuit (10). An even more remote conductive structure is included. One or more further circuit planes are included between the substrate and the circuit plane closest to it. An independent claim is also included for the method of manufacture.

公开(公告)号：DE102004021239A1

公开(公告)日：2005-11-17

申请号：DE102004021239

申请日：2004-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KOERNER HEINRICH ,  HOMMEL MARTINA ,  AUBEL OLIVER ,  HASSE WOLFGANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

公开(公告)号：DE10344389A1

公开(公告)日：2005-05-19

申请号：DE10344389

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  SCHWERD MARKUS ,  GOEBEL THOMAS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  HOMMEL MARTINA

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/316 ,  H01L21/822

Abstract: A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.

公开(公告)号：DE502006007151D1

公开(公告)日：2010-07-22

申请号：DE502006007151

申请日：2006-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522

公开(公告)号：DE102005045060B4

公开(公告)日：2007-07-05

申请号：DE102005045060

申请日：2005-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08

Abstract: The substrate (20) integrates semiconductor components. There are three circuit planes. These are designated close, intermediate or remote, with respect to the substrate, i.e. their spacing from the substrate increases with each layer. Each circuit plane contains a planar base surface and a planar covering surface adjoining a dielectric. The base surface of the circuit plane remote from the substrate (76), extends in a plane occupied by the covering surface of the intermediate circuit plane. Alternatively the base surface of the circuit plane remote from the substrate, extends in a plane lying closer to the substrate than a plane occupied by the covering surface of the intermediate circuit plane. In addition, the base surface of the intermediate circuit plane extends in a plane occupied by the covering surface of the circuit plane near the substrate. Alternatively the base surface of the intermediate circuit plane extends in a plane closer to the substrate than that occupied by the covering surface of the circuit plane close to the substrate. Circuit elements in the structure are further elaborated. A component formed by the elements (A-G), comprises one, two or more windings of a coil, a side wall of a coaxial line or parts of a condenser exceeding 10 mu m or 50 mu m in length. Salient features include use of aluminum or copper to form the tracks (34-38), at 60 atom% concentrations. They form internal conductors of the circuit (10). An even more remote conductive structure is included. One or more further circuit planes are included between the substrate and the circuit plane closest to it. An independent claim is also included for the method of manufacture.

公开(公告)号：DE102005045056B4

公开(公告)日：2007-06-21

申请号：DE102005045056

申请日：2005-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWERD MARKUS ,  KOERNER HEINRICH ,  HOMMEL MARTINA ,  SECK MARTIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/08