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    21.
    发明专利
    未知

    公开(公告)号：DE112004001321T5

    公开(公告)日：2006-06-01

    申请号：DE112004001321

    申请日：2004-07-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HILLINGER ANDREAS ,  LIAN JINGYU ,  NAGEL NICOLAS ,  BRUCHHAUS RAINER ,  GERNHARDT STEPHAN ,  WELLHAUSEN UWE ,  MOON BUM-KI ,  HORNIK KARL

    IPC: H01L21/02 ,  H01G4/06 ,  H01G4/12 ,  H01G4/33 ,  H01L21/8246 ,  H01L27/115

    Abstract: A multi-layer barrier for a ferroelectric capacitor includes an outdiffusion barrier layer permeable to both hydrogen and oxygen. The outdiffusion barrier layer covers the ferroelectric of the capacitor. Oxygen passes through the outdiffusion barrier layer into the ferroelectric during an oxygen anneal in order to repair damage to the ferroelectric caused during etching. The outdiffusion barrier layer reduces the decomposition of the ferroelectric by blocking molecules leaving the ferroelectric during the oxygen anneal. The multi-layer barrier also includes a hydrogen barrier layer deposited on the outdiffusion barrier layer after repair of the ferroelectric by the oxygen anneal. The hydrogen barrier layer allows the multi-layer barrier to block the passage of hydrogen into the ferroelectric during back-end processes.

    23.
    发明专利
    未知

    公开(公告)号：DE10356097A1

    公开(公告)日：2004-06-17

    申请号：DE10356097

    申请日：2003-11-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WELLHAUSEN UWE ,  BRUCHHAUS RAINER ,  NAGEL NICOLAS ,  GERNHARDT STEFAN ,  LIAN JENNY ,  HILLIGER ANDREAS

    IPC: H01L21/02 ,  H01L21/768 ,  H01L27/105 ,  H01L21/8239

    Abstract: The invention includes a wafer having a poly silicon plug passing through a CP-contact. The poly silicon plug is formed from a relatively heavily doped poly silicon layer and a relatively lightly doped poly silicon layer. The relatively lightly doped poly silicon layer passes through the relatively heavily doped poly silicon layer to extend beyond the relatively heavily doped poly silicon layer towards the surface of the wafer. A barrier layer covers top and side walls of the relatively lightly doped poly silicon layer for reducing oxidation at the surface of the poly silicon plug. The wafer is fabricated by depositing a relatively heavily doped poly silicon layer in a CP-contact, depositing a relatively lightly doped poly silicon layer to pass through the relatively heavily doped poly silicon layer, and depositing a barrier layer to cover top and side walls of the relatively lightly doped poly silicon layer to reduce oxidation at the surface of the poly silicon plug.

    29.
    发明专利
    未知

    公开(公告)号：DE10349747B4

    公开(公告)日：2007-02-15

    申请号：DE10349747

    申请日：2003-10-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WELLHAUSEN UWE ,  BRUCHHAUS RAINER ,  NAGEL NICOLAS ,  GERNHARDT STEFAN

    IPC: H01L21/321 ,  H01L21/316 ,  H01L21/82 ,  H01L21/8239

    Abstract: An layer for a structure such as a ferro-capacitor is formed by a three stage process consisting of (i) applying a wetting layer 23 over some or all of the structure 21, (ii) applying a second layer 25 of a second material over the wetting layer 23, and (iii) transforming the second material by a chemical reaction. In an example, the second material is Al, and step (iii) inclues oxidising the Al layer 25 to form an Al2O3 layer 27. The wetting layer 21 is preferably applied by a process having good step coverage even in high aspect regions of the substrate, even though that process may have a low deposition rate. The wetting layer 21 is preferably formed of a material over which the second material has a high mobility, so that the aluminium layer-and the subsequent Al2O3 layer-are relatively uniform in thickness. Step (iii) may be preceded by a step of enhancing lateral mobility of the second material, e.g. by a heat treatment.

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