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公开(公告)号:AT515058T
公开(公告)日:2011-07-15
申请号:AT05251903
申请日:2005-03-29
Applicant: LAM RES CORP
Inventor: WOODS CARL
IPC: H01L21/00 , H01L21/304
Abstract: An apparatus for processing a substrate with a fluid meniscus to be applied to a surface of the substrate is provided which includes a docking surface configured to be placed adjacent to an edge of the substrate where the docking surface is in the same plane as the substrate. The docking surface provides a transition interface to allow the fluid meniscus to enter and exit the surface of the substrate.
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22.
公开(公告)号:PL208010B1
公开(公告)日:2011-03-31
申请号:PL37385703
申请日:2003-09-30
Applicant: LAM RES CORP
Inventor: WOODS CARL , GARCIA JAMES P , DE LARIOS JOHN , RAVKIN MIKE , REDEKER FRED C , NICKHOU AFSHIN
IPC: H01L21/00
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公开(公告)号:DE602004023878D1
公开(公告)日:2009-12-10
申请号:DE602004023878
申请日:2004-12-20
Applicant: LAM RES CORP
Inventor: DAVIS GLENN W , WOODS CARL , PARKS JOHN , REDEKER FRED C , RAVKIN MIKE , ORBOCK MICHAEL L
IPC: H01L21/00 , H01L21/687
Abstract: A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.
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公开(公告)号:AT447238T
公开(公告)日:2009-11-15
申请号:AT04815000
申请日:2004-12-20
Applicant: LAM RES CORP
Inventor: DAVIS GLENN , WOODS CARL , PARKS JOHN , REDEKER FRED , RAVKIN MIKE , ORBOCK MICHAEL
IPC: H01L21/00 , H01L21/687
Abstract: A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.
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公开(公告)号:SG140470A1
公开(公告)日:2008-03-28
申请号:SG2006030670
申请日:2003-09-30
Applicant: LAM RES CORP
Inventor: WOODS CARL , GARCIA JAMES P , DE LARIOS JOHN , RAVKIN MIKE , REDEKER FRED C
Abstract: System for Substrate Processing, with Meniscus, Vacuum, IPA vapor, Drying Manifold An apparatus and method for processing a wafer is provided. The system and method are designed to process a surface of a wafer using a meniscus. The meniscus is controlled and is capable of being moved over the surface of the wafer to enable cleaning, rinsing, chemical processing, and drying. The apparatus can be defined using a number of configurations to enable specific processing of the wafer surface using the meniscus, and such configurations can include the use of proximity heads.
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公开(公告)号:SG140469A1
公开(公告)日:2008-03-28
申请号:SG2006030597
申请日:2003-09-30
Applicant: LAM RES CORP
Inventor: WOODS CARL , GARCIA JAMES P , DE LARIOS JOHN , RAVKIN MIKE , REDEKER FRED C
Abstract: System for Substrate Processing with Meniscus, Vacuum, IPA vapor, Drying Manifold An apparatus and method for processing a wafer is provided. The system and method are designed to process a surface of a wafer using a meniscus. The meniscus is controlled and is capable of being moved over the surface of the wafer to enable cleaning, rinsing, chemical processing, and drying. The apparatus can be defined using a number of configurations to enable specific processing of the wafer surface using the meniscus, and such configurations can include the use of proximity heads.
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公开(公告)号:DE60314508T2
公开(公告)日:2008-02-21
申请号:DE60314508
申请日:2003-09-30
Applicant: LAM RES CORP
Inventor: DE LARIOS JOHN M , GARCIA JAMES P , WOODS CARL , RAVKIN MIKE , REDEKER FRITZ , BOYD JOHN , NICKHOU AFSHIN
IPC: H01L21/00
Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.
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公开(公告)号:MY147737A
公开(公告)日:2013-01-15
申请号:MYPI20055818
申请日:2005-12-12
Applicant: LAM RES CORP
Inventor: WOODS CARL
IPC: C25B9/02
Abstract: A MULTI-LAYERED WAFER SUPPORT APPARATUS IS PROVIDED FOR PERFORMING AN ELECTROPLATING PROCESS ON A SEMICONDUCTOR WAFER ("WAFER") (107). THE MULTI-LAYERED WAFER SUPPORT APPARATUS INCLUDES A BOTTOM FILM LAYER (201) AND TOP FILM LAYER (301). THE BOTTOM FILM LAYER INCLUDES A WAFER PLACEMENT AREA (211, 214) AND A SACRIFICIAL ANODE (207a, 207b) SURROUNDING THE WAFER PLACEMENT AREA. THE TOP FILM LAYER IS DEFINED TO BE PLACED OVER THE BOTTOM FILM LAYER. THE TOP FILM LAYER INCLUDES AN OPEN REGION (311) TO BE POSITIONED OVER A SURFACE OF THE WAFER TO BE PROCESSED, I.E., ELECTROPLATED. THE TOP FILM LAYER PROVIDES A LIQUID SEAL (313) BETWEEN THE TOP FILM LAYER AND THE WAFER, ABOUT A PERIPHERY OF THE OPEN REGION. THE TOP FILM LAYER FURTHER INCLUDES FIRST AND SECOND ELECTRICAL CIRCUITS (307a, 307b) THAT ARE EACH DEFINED TO ELECTRICALLY CONTACT A PERIPHERAL TOP SURFACE OF THE WAFER AT DIAMETRICALLY OPPOSED LOCATIONS ABOUT THE WAFER.
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公开(公告)号:AT556431T
公开(公告)日:2012-05-15
申请号:AT07007143
申请日:2003-09-30
Applicant: LAM RES CORP
Inventor: DE LARIOS JOHN M , GARCIA JAMES P , WOODS CARL , RAVKIN MIKE , REDEKER FRITZ , BOYD JOHN , NICKHOU AFSHIN
Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.
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公开(公告)号:MY145206A
公开(公告)日:2012-01-13
申请号:MYPI20101395
申请日:2005-06-15
Applicant: LAM RES CORP
Inventor: DORDI YEZDI N , REDEKER FRED C , BOYD JOHN M , MARASCHIN ROBERT , WOODS CARL
IPC: C25D21/12
Abstract: AN ELECTROPLATING APPARATUS FOR ELECTROPLATING A SURFACE OF A WAFER IS PROVIDED. THE WAFER IS CAPABLE OF BEING ELECTRICALLY CHARGED AS A CATHODE. THE ELECTROPLATING APPARATUS INCLUDES A PLATING HEAD CAPABLE OF BEING POSITIONED EITHER OVER OR UNDER THE SURFACE OF A WAFER AND CAPABLE OF BEING ELECTRICALLY CHARGED AS AN ANODE. THE PLATING HEAD IS CAPABLE OF ENABLING METALLIC PLATING BETWEEN THE SURFACE OF THE WAFER AND THE PLATING HEAD WHEN THE WAFER AND PLATING HEAD ARE CHARGED. THE PLATING HEAD FURTHER COMPRISES A VOLTAGE SENSOR PAIR CAPABLE OF SENSING A VOLTAGE PRESENT BETWEEN THE PLATING HEAD AND THE SURFACE OF THE WAFER, AND A CONTROLLER CAPABLE OF RECEIVING DATA FROM THE VOLTAGE SENSOR PAIR. THE DATA RECEIVED FROM THE VOLTAGE SENSOR PAIR IS USED BY THE CONTROLLER TO MAINTAIN A SUBSTANTIALLY CONSTANT VOLTAGE TO BE APPLIED BY THE ANODE WHEN THE PLATING HEAD IS PLACED IN POSITIONS OVER THE SURFACE OF THE WAFER. A METHOD OF ELECTROPLATING A WAFER IS ALSO PROVIDED.
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