公开(公告)号：ITMI20042244A1

公开(公告)日：2005-02-19

申请号：ITMI20042244

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： FERLA GIUSEPPE ,  FRISINA FERRUCCIO ,  MAGRI ANGELO

公开(公告)号：DE60005541D1

公开(公告)日：2003-10-30

申请号：DE60005541

申请日：2000-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： CAMALLERI CATENO MARCO ,  LORENTI SIMONA ,  CALI DENISE ,  VASQUEZ PATRIZIA ,  FERLA GIUSEPPE

IPC: H01L21/225 ,  H01L21/331 ,  H01L29/73

公开(公告)号：DE69429915D1

公开(公告)日：2002-03-28

申请号：DE69429915

申请日：1994-07-04

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： FERLA GIUSEPPE ,  FRISINA FERRUCCIO

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE69434268T2

公开(公告)日：2006-01-12

申请号：DE69434268

申请日：1994-07-14

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： FERLA GIUSEPPE ,  FRISINA FERRUCCIO

IPC: H01L29/74 ,  H01L21/265 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/739 ,  H01L29/749 ,  H01L29/78

Abstract: A high-speed MOS-technology power device integrated structure comprises a plurality of elementary functional units formed in a lightly doped semiconductor layer (1) of a first conductivity type, the elementary functional units comprising channel regions (6) of a second conductivity type covered by a conductive insulated gate layer (8) comprising a polysilicon layer (5); the conductive insulated gate layer (8) also comprises a highly conductive layer (9) superimposed over said polysilicon (5) layer and having a resistivity much lower than the resistivity of the polysilicon layer (5), so that a resistance introduced by the polysilicon layer (5) is shunted with a resistance introduced by said highly conductive layer (9) and the overall resistivity of the conductive insulated gate (8) layer is lowered.

公开(公告)号：DE69533134T2

公开(公告)日：2005-07-07

申请号：DE69533134

申请日：1995-10-30

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： MAGRI ANGELO ,  FRISINA FERRUCCIO ,  FERLA GIUSEPPE

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/739

Abstract: A MOS technology power device comprises a plurality of elementary functional units which contribute for respective fractions to an overall current of the power device and which are formed in a semiconductor material layer (2) of a first conductivity type. Each elementary functional unit comprises a body region (3) of a second conductivity type formed in the semiconductor material layer (2), the body region (3) having the form of a body stripe (3) elongated in a longitudinal direction on a surface of the semiconductor material layer (2). Each body stripe (3) includes at least one source portion (60) doped with dopants of the first conductivity type which is intercalated with a body portion (40) of the body stripe (3) wherein no dopants of the first conductivity type are provided.

公开(公告)号：ITMI20042245A1

公开(公告)日：2005-02-19

申请号：ITMI20042245

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： BAZZANO GAETANO ,  FERLA GIUSEPPE ,  FRISINA FERRUCCIO ,  GRIMALDI ANTONIO ,  MAGRI ANGELO

公开(公告)号：ITMI20042243A1

公开(公告)日：2005-02-19

申请号：ITMI20042243

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： ARENA GIUSEPPE ,  CAMALLERI MARCO ,  FERLA GIUSEPPE

公开(公告)号：DE69429913T2

公开(公告)日：2002-10-31

申请号：DE69429913

申请日：1994-06-23

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： FERLA GIUSEPPE ,  FRISINA FERRUCCIO

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/10 ,  H01L29/739

公开(公告)号：DE69518653T2

公开(公告)日：2001-04-19

申请号：DE69518653

申请日：1995-12-28

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： GRIMALDI ANTONIO ,  SCHILLACI ANTONINO ,  FRISINA FERRUCCIO ,  FERLA GIUSEPPE

IPC: H01L21/336 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/739

公开(公告)号：DE69515876T2

公开(公告)日：2000-08-17

申请号：DE69515876

申请日：1995-11-06

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： FRISINA FERRUCCIO ,  FERLA GIUSEPPE ,  RINAUDO SALVATORE

IPC: H01L21/336 ,  H01L29/08 ,  H01L29/78