公开(公告)号：US20130112138A1

公开(公告)日：2013-05-09

申请号：US13726971

申请日：2012-12-26

Applicant: 38th Research Institute, China Electronics Technology Group Corporation

Inventor： Huarong LIU

IPC: C23F4/02 ,  H01J1/00

CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

Abstract translation: 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

公开(公告)号：US20110036810A1

公开(公告)日：2011-02-17

申请号：US12866498

申请日：2008-03-25

Applicant: Fumihiro Nakahara ,  Ryozo Nonogaki ,  Yoshinori Terui

Inventor： Fumihiro Nakahara ,  Ryozo Nonogaki ,  Yoshinori Terui

IPC: C25F3/16 ,  C23F1/00

CPC classification number: H01J9/025 ,  H01J1/16 ,  H01J1/3044 ,  H01J9/042 ,  H01J37/073 ,  H01J37/3056 ,  H01J2201/30415 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: An electron gun with a truncated-cone-shaped cathode with uniform emission current density is efficiently manufactured. A manufacturing method of a cathode electron gun equipped with a supply source for diffusing oxide of a metal element on a single crystal needle of tungsten or molybdenum includes steps of forming a truncated-cone-shape having a flat plane at a single crystal edge serving as the cathode by machining beforehand, thereafter thinning and removing a front layer of the flat plane by a focused gallium ion beam, and re-flattening it.

Abstract translation: 具有均匀发射电流密度的截头锥形阴极的电子枪被有效地制造。 配备有用于在钨或钼的单晶针上扩散金属元素的氧化物的供给源的阴极电子枪的制造方法包括在单晶边缘处形成具有平面的截头圆锥形状的步骤， 预先加工阴极，然后通过聚焦的镓离子束稀释并除去平面的前层，并使其平坦化。

公开(公告)号：EP2575158B1

公开(公告)日：2015-04-22

申请号：EP12798587.7

申请日：2012-06-13

Applicant: 38th Research Institute, China Electronics Technology Group Corporation

Inventor： LIU, Huarong

IPC: H01J9/02 ,  H01J1/304 ,  H01J37/04 ,  H01J37/06 ,  H01J37/08

CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

公开(公告)号：EP2242084A1

公开(公告)日：2010-10-20

申请号：EP08722768.2

申请日：2008-03-25

Applicant: Denki Kagaku Kogyo Kabushiki Kaisha

Inventor： NAKAHARA, Fumihiro ,  NONOGAKI, Ryozo ,  TERUI, Yoshinori

IPC: H01J9/02 ,  H01J37/073

CPC classification number: H01J9/025 ,  H01J1/16 ,  H01J1/3044 ,  H01J9/042 ,  H01J37/073 ,  H01J37/3056 ,  H01J2201/30415 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: An electron gun with a truncated-cone-shaped cathode with uniform emission current density is efficiently manufactured. A manufacturing method of a cathode electron gun equipped with a supply source for diffusing oxide of a metal element on a single crystal needle of tungsten or molybdenum includes steps of forming a truncated-cone-shape having a flat plane at a single crystal edge serving as the cathode by machining beforehand, thereafter thinning and removing a front layer of the flat plane by a focused gallium ion beam, and re-flattening it.

Abstract translation: 具有均匀发射电流密度的具有截头圆锥形阴极的电子枪被有效地制造。 配备有用于在钨或钼的单晶针上扩散金属元素的氧化物的供给源的阴极电子枪的制造方法包括在单晶边缘处形成具有平面的截头圆锥形的步骤， 阴极，然后通过聚焦的镓离子束稀释并去除平面的前层，并使其平坦化。

公开(公告)号：EP2242084A4

公开(公告)日：2011-03-23

申请号：EP08722768

申请日：2008-03-25

Applicant: DENKI KAGAKU KOGYO KK

Inventor： NAKAHARA FUMIHIRO ,  NONOGAKI RYOZO ,  TERUI YOSHINORI

IPC: H01J1/16 ,  H01J1/304 ,  H01J9/02 ,  H01J9/04 ,  H01J37/073

CPC classification number: H01J9/025 ,  H01J1/16 ,  H01J1/3044 ,  H01J9/042 ,  H01J37/073 ,  H01J37/3056 ,  H01J2201/30415 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/3174 ,  H01J2237/31749

公开(公告)号：EP2144274A1

公开(公告)日：2010-01-13

申请号：EP08159924.3

申请日：2008-07-08

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Winkler, Dieter ,  Weigel, Udo ,  Grimm, Stefan

IPC: H01J37/073 ,  H01J37/08 ,  H01J1/304 ,  H01J9/02 ,  H01J27/26

CPC classification number: C25D5/48 ,  B81C1/00111 ,  B82Y15/00 ,  C25D7/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2237/0807

Abstract: A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip (11) having a shank (15), an apex (16), and a coating (14,17,18) covering the shank and the apex; locally removing the coating (14) from the apex (16) by field evaporation; and partially or fully restoring the coating at the apex (16).

Abstract translation: 在超锋利尖端制备的方法，特别是单原子尖端，提供方法，包括提供一个尖端（11）具有杆部（15）到顶点（16）和涂层（14,17,18），其覆盖 柄和顶点; 局部地去除从顶点（16）由场蒸发所述涂层（14）; 和在顶点（16）部分或完全恢复涂层。

公开(公告)号：US09583299B2

公开(公告)日：2017-02-28

申请号：US14455338

申请日：2014-08-08

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J1/304 ,  H01J37/073 ,  H01J37/08 ,  G01Q60/10 ,  G01Q60/24 ,  G01Q70/16 ,  H01J37/21 ,  H01J37/28

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

Abstract translation: 提供了一种铱尖端，其包括在具有<210>取向的单晶的锐化顶点部分中具有一个{100}晶面作为多个棱锥表面之一的金字塔结构。 将铱尖端施加到气体场离子源或电子源。 将气体离子源和/或电子源施加到聚焦离子束装置，电子显微镜，电子束施加分析装置，离子电子多光束装置，扫描探针显微镜或掩模修复装置。

公开(公告)号：US08164071B2

公开(公告)日：2012-04-24

申请号：US12570112

申请日：2009-09-30

Applicant: Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

Inventor： Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

IPC: H01J27/00

CPC classification number: H01J37/065 ,  H01J1/3044 ,  H01J37/06 ,  H01J2201/30415 ,  H01J2201/30446 ,  H01J2201/30476 ,  H01J2237/06316 ,  H01J2237/06375 ,  H01J2237/065 ,  Y10T29/49888

Abstract: A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

Abstract translation: 电子束源的尖端包括承载涂层的芯。 该涂层由具有比形成芯的表面的材料更大的导电性的材料形成。

公开(公告)号：US08017413B2

公开(公告)日：2011-09-13

申请号：US12450965

申请日：2008-07-01

Applicant: Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

Inventor： Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

IPC: H01L21/00

CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30415 ,  H01J2201/30453 ,  H01J2203/0228 ,  H01J2329/0418 ,  H01J2329/0444 ,  H01J2329/4626

Abstract: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed.

Abstract translation: 提供一种制造具有碳微观结构的场致发射阵列的方法。 该方法包括：光掩模附着步骤，其将具有图案凹槽的光掩模附着到透明基板的一个表面; 将负性光致抗蚀剂附着到光掩模的一个表面的光致抗蚀剂附着步骤; 曝光步骤，从所述光掩模向所述透明基板的相对表面照射光，以通过所述图案凹槽照射在所述负性光致抗蚀剂上的光来固化所述负性光致抗蚀剂的一部分; 去除负性光致抗蚀剂的未固化部分同时留下负性光致抗蚀剂的固化部分作为微结构的显影步骤; 对由此获得的微结构进行加热和碳化的热解步骤; 以及将电压供给阴极安装在其上形成微结构的透明基板的表面上的阴极附着步骤。

公开(公告)号：US20110089396A1

公开(公告)日：2011-04-21

申请号：US12450965

申请日：2008-07-01

Applicant: Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

Inventor： Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

IPC: H01L29/16 ,  H01L21/28 ,  H01L21/66

CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30415 ,  H01J2201/30453 ,  H01J2203/0228 ,  H01J2329/0418 ,  H01J2329/0444 ,  H01J2329/4626

Abstract: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed.

Abstract translation: 提供一种制造具有碳微观结构的场致发射阵列的方法。 该方法包括：光掩模附着步骤，其将具有图案凹槽的光掩模附着到透明基板的一个表面; 将负性光致抗蚀剂附着到光掩模的一个表面的光致抗蚀剂附着步骤; 曝光步骤，从所述光掩模向所述透明基板的相对表面照射光，以通过所述图案凹槽照射在所述负性光致抗蚀剂上的光来固化所述负性光致抗蚀剂的一部分; 去除负性光致抗蚀剂的未固化部分同时留下负性光致抗蚀剂的固化部分作为微结构的显影步骤; 对由此获得的微结构进行加热和碳化的热解步骤; 以及将电压供给阴极安装在其上形成微结构的透明基板的表面上的阴极附着步骤。