公开(公告)号：EP2194563A2

公开(公告)日：2010-06-09

申请号：EP09175519.9

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device (10), coated with a low-work function material, having good electron-emitting properties with high reproducibility. Differences in electron-emitting properties between electron-emitting devices each fabricated by the method are reduced. Before a structure (3) is coated with the low-work function material, a metal oxide layer (4) is formed on the structure (3).

Abstract translation: 提供了下面的方法：易制造到电子发射器件（10），涂覆有低功函数材料，具有高再现性良好的电子发射特性的方法。 在由所述方法制造的电子发射器件之间的电子发射特性的差异降低。 的结构（3）之前被涂覆有低功函数材料，金属氧化物层（4）形成在所述结构（3）。

公开(公告)号：EP2161734A3

公开(公告)日：2010-11-03

申请号：EP09169248.3

申请日：2009-09-02

Applicant: Canon Kabushiki Kaisha

Inventor： Kobayashi, Tamaki ,  Nishida, Shoji ,  Moriguchi, Takuto ,  Tsukamoto, Takeo

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/12

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

Abstract: An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

公开(公告)号：EP2161734A2

公开(公告)日：2010-03-10

申请号：EP09169248.3

申请日：2009-09-02

Applicant: Canon Kabushiki Kaisha

Inventor： Kobayashi, Tamaki ,  Nishida, Shoji ,  Moriguchi, Takuto ,  Tsukamoto, Takeo

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/12

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

Abstract: An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

Abstract translation: 电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等 至或小于100nm。

公开(公告)号：US20170117112A1

公开(公告)日：2017-04-27

申请号：US15398537

申请日：2017-01-04

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

公开(公告)号：US09548180B2

公开(公告)日：2017-01-17

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304 ,  H01L31/0352 ,  H01L21/3065

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US20130200776A1

公开(公告)日：2013-08-08

申请号：US13639290

申请日：2011-04-04

Applicant: Qiu-Hong Hu

Inventor： Qiu-Hong Hu

IPC: H01J1/304 ,  H01J63/04

CPC classification number: H01J1/3044 ,  B82Y20/00 ,  H01J1/304 ,  H01J31/123 ,  H01J63/02 ,  H01J63/04 ,  H01J2201/3043 ,  H01J2201/30446 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0428 ,  H01J2329/0439 ,  H01J2329/0465 ,  H01J2329/0468 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Abstract translation: 本发明涉及包括至少部分导电的基底结构的外部发射阴极和空间上分布在基部结构处的多个导电千分尺尺寸的部分，其中每个微米尺寸部分的至少一部分被提供 具有多个导电纳米结构。 本发明的优点包括降低功率消耗以及例如增加光输出。 包括场发射阴极的场发射照明装置。

公开(公告)号：US08388400B2

公开(公告)日：2013-03-05

申请号：US12627982

申请日：2009-11-30

Applicant: Naofumi Aoki ,  Shoji Nishida

Inventor： Naofumi Aoki ,  Shoji Nishida

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

Abstract translation: 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US20110175038A1

公开(公告)日：2011-07-21

申请号：US12359435

申请日：2009-01-26

Applicant: Kun Hou ,  Dennis M. Manos ,  Ronald A. Outlaw

Inventor： Kun Hou ,  Dennis M. Manos ,  Ronald A. Outlaw

IPC: H01B1/04 ,  H01B1/02 ,  B05D5/12 ,  B05D3/10 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C23C14/18 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/20 ,  C23C14/5806 ,  C23C14/5853 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30453 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496

Abstract: Compositions of carbon nanoflakes are coated with a low Z compound, where an effective electron emission of the carbon nanoflakes coated with the low Z compound is improved compared to an effective electron emission of the same carbon nanoflakes that are not coated with the low Z compound or of the low Z compound that is not coated onto the carbon nanoflakes. Compositions of chromium oxide and molybdenum carbide-coated carbon nanoflakes are also described, as well as applications of these compositions. Carbon nanoflakes are formed and a low Z compound coating, such as a chromium oxide or molybdenum carbide coating, is formed on the surfaces of carbon nanoflakes. The coated carbon nanoflakes have excellent field emission properties.

Abstract translation: 碳纳米片的组合物涂覆有低Z化合物，其中涂覆有低Z化合物的碳纳米片的有效电子发射与未涂覆低Z化合物的相同碳纳米片的有效电子发射相比有所改善，或 的未涂覆在碳纳米片上的低Z化合物。 还描述了氧化铬和碳化钼包覆的碳纳米片的组成以及这些组合物的应用。 形成碳纳米片，并且在碳纳米片的表面上形成低Z化合物涂层，例如氧化铬或碳化钼涂层。 涂覆的碳纳米片具有优异的场致发射特性。

公开(公告)号：US09984846B2

公开(公告)日：2018-05-29

申请号：US15217158

申请日：2016-07-22

Applicant: KLA-Tencor Corporation

Inventor： William G. Schultz ,  Gildardo R. Delgado ,  Frances Hill ,  Edgardo Garcia Berrios ,  Rudy Garcia

IPC: H01J1/34 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24

CPC classification number: H01J1/3044 ,  H01J1/34 ,  H01J9/025 ,  H01J19/24 ,  H01J19/82 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2201/30492 ,  H01J2209/0223

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less.

公开(公告)号：US20180005791A1

公开(公告)日：2018-01-04

申请号：US15217158

申请日：2016-07-22

Applicant: KLA-Tencor Corporation

Inventor： William G. Schultz ,  Gildardo R. Delgado ,  Frances Hill ,  Edgardo Garcia Berrios ,  Rudy Garcia

IPC: H01J1/304 ,  H01J19/24 ,  H01J1/34 ,  H01J9/02

CPC classification number: H01J1/3044 ,  H01J1/34 ,  H01J9/025 ,  H01J19/24 ,  H01J19/82 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2201/30492 ,  H01J2209/0223

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less.