T-TYPE GATE ELECTRODE SUPERIMPOSING METHOD AND T-TYPE LOW-RESISTANCE METAL SUPERIMPOSING METHOD

    公开(公告)号:JPH09148269A

    公开(公告)日:1997-06-06

    申请号:JP17667296

    申请日:1996-07-05

    Abstract: PROBLEM TO BE SOLVED: To provide a method of superimposing a T-shaped gate electrode and low-resistance metal whereby the productivity can be improved with a simple process. SOLUTION: A fine gate-photoresist film 12 is formed on specified part of a semiconductor substrate 11, insulation film 13 and flattening film 14 are formed thereon and etched to expose the film 13, this etched and exposed film 13 is etched and the exposed film 12 is etched. A gate metal 15 is vapor- deposited thereon, the film 14 is removed, and T-shaped gate metal 15 is vapor- deposited. Using this method, the insulation film and flattening film are formed on the semiconductor substrate and fine gate metal, the flattening film is etched back until the insulation film is exposed, the exposed region of the insulation film is etched to expose the reverse-sloped side face of the flattening film and low-resistance metal is vapor-deposited so as to have a directionality and lifted off.

    FILLING METHOD FOR CONTACT HOLE
    302.
    发明专利

    公开(公告)号:JPH09116015A

    公开(公告)日:1997-05-02

    申请号:JP22854996

    申请日:1996-08-29

    Abstract: PROBLEM TO BE SOLVED: To provide a contact hole filling method by which very small contact holes or via holes having a high step ratio can be filled with a wire metal, without forming any gap therein. SOLUTION: Contact holes 17 are formed into a substrate 11, a barrier metal layer 19 and moisture layer 21 are formed on the top of an oxide film 15 and inside of the holes 17 to electrically connect to the substrate 11, and a conductive metal layer 23 is formed on the layer 21 and etched with a plasma to remove impurities and oxides which exist on the surface of this layer 23 and would degrade the mobility of the surface metal atoms. In a reactor etched for cleaning, the metal layer 23 is reflowed to fill up the contact holes.

    NO-VOLTAGE OPTICALLY BISTABLE DEVICE MAKING USE OF OPTICAL MODULATOR OF LAMINATED PIN-DIODE STRUCTURE

    公开(公告)号:JPH09105968A

    公开(公告)日:1997-04-22

    申请号:JP21850696

    申请日:1996-08-20

    Abstract: PROBLEM TO BE SOLVED: To provide a nonvoltage optical bistable device which contains a pin-diode laminar structure having a miultiple quantum well structure as an intermediate layer and has a nonresonant structure. SOLUTION: This pin diode laminar structure consists of a semi-insulating semiconductor substrate 1, semiconductor mirror layer 2, p-type semiconductor electrode layer 3, first intermediate active layer 4, n-type semiconductor electrode layer 5, second intermediate active layer 6, p-type semiconductor electrode layer 7 and non-reflecting film 8 successively deposited. The p-type semiconductor electrode layer 3, intermediate active layer 4, n-type semiconductor electrode layer 5, intermediate active layer 6 and p-type semiconductor electrode layer 7 form two pin diodes connected to each other to give a symmetry structure of P-i-N-i-P as a pair, while the semiconductor mirror layer 2 and nonreflecting film 8 form a nonresonant structure.

    AUTOMATIC GENERATION METHOD OF REMOTE INSTRUCTION IN SATELLITE CONTROL SYSTEM USING INFERENCE UNIT

    公开(公告)号:JPH08272613A

    公开(公告)日:1996-10-18

    申请号:JP5519296

    申请日:1996-03-12

    Abstract: PROBLEM TO BE SOLVED: To unnecessitate a burden that an operator has to generate a remote instruction code (telecommand code) to enhance reliability and performance of a satellite control system. SOLUTION: A signal message processor 12 sends a lower remote instruction code and receives and preprocesses remote data from a satellite. A satellite task plan/analyzer 16 analyzes the remote data and a task and generates an upper remote instruction. A remote instruction generation/effector 15 has a remote instruction inference machine 17, retrieves data in a satellite operation knowledge base 18 and converts the upper remote instruction provided from the analyzer 16 into a mnemonic remote operation code. The effector 15 uses a remote instruction code data base 19, converts the mnemonic remote operation code into the lower remote instruction code and sends it to a satellite through the processor 12.

    SIGNAL RELAY EXCHANGE DUPLICATION CONTROL DEVICE AND METHOD

    公开(公告)号:JPH08186642A

    公开(公告)日:1996-07-16

    申请号:JP14498395

    申请日:1995-06-12

    Abstract: PURPOSE: To maintain consistency between a content of a database and data operated at present by installing two operating management sections in the system so as to allow other operating management section to conduct its function on the occurrence of a fault in the operating management section in service. CONSTITUTION: Two operating management sections 301, 302 are connected to a target system (SMX-1 system) and when the operating management section (OMM[P]) 301 is in operation, the other operating management section (OMM[S]) 302 is set in a standby state. HIFU(Highway Interface Unit) [P] 307, 308 and HIFU [S] boards 303, 304 are connected to the operating management sections 301, 302 so as to allow the system to be capable of coping with any system fault quickly. Furthermore, the operating management section 301, 302 are connected to a SIGNOS device 310 at a remote distance via a modem by means of the X.25 network. Even on the occurrence of a fault in the operating management section 301 (302) in service, the function is conducted by the other operating management section 302(301).

    SWITCH CIRCUIT FOR MONOLITHIC MICROWAVE INTEGRATED CIRCUIT

    公开(公告)号:JPH08186485A

    公开(公告)日:1996-07-16

    申请号:JP31539094

    申请日:1994-12-19

    Abstract: PURPOSE: To obtain a depletion-type MOSFET switch circuit operated with a positive voltage as to an ultrahigh frequency monolithic integrated circuit to which only a positive power supply voltage is applied. CONSTITUTION: The circuit is provided with a depletion-type 1st MOSFET 201 whose gate receives an input signal and whose drain provides an output of an output signal, a 2nd MOSFET 203 whose source connects to the source of the 1st MOSFET 201 and whose gate connects to an interruption adjustment power supply Vc, and a 3rd MOSFET 205 whose drain connects to the sources of the 1st and 2nd MOSFETs 201, 203, whose source and gate connect respectively to ground and acting like a constant current source.

    LOW NOISE AMPLIFIER OF ULTRA HIGH FREQUENCY MONOLITHIC

    公开(公告)号:JPH08186454A

    公开(公告)日:1996-07-16

    申请号:JP31719694

    申请日:1994-12-20

    Abstract: PURPOSE: To obtain excellent stability over all frequency bands by overcoming deteriorated stability due to an inductive component of a bonding wire connected externally. CONSTITUTION: In the case that grounding points are unified into one node and connected externally by using a bonding wire 120 in the low noise amplifier having an input matching section consisting of capacitors 101, 102 and an inductor 103 and an output matching section consisting of two MESFETs 104, 113 connected in cascade and a capacitor 117, a capacitor 110 is connected in parallel between the MESFETs 104, 113 to improve the deteriorated stability.

    CONTROLLING METHOD OF BIT RATIO OF VIDEO

    公开(公告)号:JPH08163554A

    公开(公告)日:1996-06-21

    申请号:JP7688195

    申请日:1995-03-31

    Abstract: PURPOSE: To prevent image quality deterioration due to a scene change by controlling bit assignment depending on the presence of the scene change for each SUBGOP being a division of a GOP that is one unit of image information consisting of I, P, B pictures of a required number based on the MPEG standard. CONSTITUTION: A SUBGOP from a video frame input section 1 is given to a coding section 2, where bit assignment is controlled based on a signal from a bit rate control section 4. In this case, the control section 4 checks a scene change between two consecutive SUBGOP sets to discriminate it that a SUBGOP with the scene change is a SUBGOP next to a current SUBGOP. In the case that whether or not a final frame and a current SUBGOP and a final frame of the next SUBGOP are a P frame is checked and the SUBGOP is coded, when there is any scene change, a bit number with respect to a frame with a scene change whose SUBGOP is coded is much assigned depending on a bit filling degree of a buffer section 3. Thus, prescribed coded image information is obtained, where image quality deterioration due to the scene change is prevented.

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