公开(公告)号：EP2463246A1

公开(公告)日：2012-06-13

申请号：EP10806179.7

申请日：2010-06-25

Applicant: Shin-Etsu Quartz Products Co.,Ltd.

Inventor： YAMAGATA, Shigeru ,  USUI, Tomomi

IPC: C03B20/00 ,  C30B15/10 ,  C30B29/06

CPC classification number: C03B19/095 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/2982

Abstract: The present invention is a method for producing a silica container arranged with a silica substrate having a rotational symmetry, wherein the method comprises: a step of forming a preliminarily molded article having a prescribed shape by feeding a powdered substrate's raw material (silica particles) to an inner wall of an outer frame having sucking holes with rotating the frame, and a step of forming a silica substrate wherein the preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O 2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body. With this, provided are a method for producing a silica container, having a high dimensional precision and containing extremely low amount of carbon and an OH group, with a low production cost by using main raw material powders comprised of a silica as its main component, and a silica container thereby obtained.

公开(公告)号：EP1580170A4

公开(公告)日：2011-12-28

申请号：EP03775963

申请日：2003-11-28

Applicant: SHINETSU QUARTZ PROD

Inventor： SATO TATSUHIRO ,  KAITOU TAKAHIRO ,  FUJINOKI AKIRA ,  KATO TOSHIYUKI ,  SEGAWA TOHRU; ,  YOSHIDA NOBUMASA

IPC: C03C3/06 ,  C03B8/04 ,  C03B19/14 ,  C03B20/00

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B2201/03 ,  C03B2201/04 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/20 ,  C03B2201/24 ,  C03C2201/02 ,  C03C2201/11 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/26

Abstract: First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cm−1 or more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.

公开(公告)号：EP1394127A4

公开(公告)日：2008-04-30

申请号：EP02720535

申请日：2002-04-19

Applicant: NIPPON KOGAKU KK

Inventor： KOMINE NORIO ,  YOSHIDA AKIKO ,  JINBO HIROKI ,  FUJIWARA SEISHI

IPC: C03C3/06 ,  C03B19/14 ,  C03C4/00 ,  C03C23/00 ,  G02B1/00 ,  G02B1/02 ,  G02B13/14 ,  G03F7/20 ,  H01L21/027

CPC classification number: C03C4/0071 ,  C03B19/1423 ,  C03B19/1453 ,  C03B19/1492 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/00 ,  C03C3/06 ,  C03C2201/11 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/40 ,  C03C2203/44 ,  C03C2203/46 ,  C03C2203/52 ,  C03C2203/54 ,  G02B1/02 ,  G02B13/143 ,  G03F7/70241 ,  G03F7/70958

Abstract: A silica glass member of the present invention is one wherein when a composition thereof is expressed by SiOx, x is not less than 1.85 nor more than 1.95, wherein a concentration of hydrogen molecules included therein is not less than 1x10 molecules/cm nor more than 5x10 molecules/cm , and wherein a difference A-B between an absorption coefficient A immediately before an end of irradiation with 1x10 pulses of ArF excimer laser light in an average one-pulse energy density of 2 mJ/cm and a second absorption coefficient B at 600 seconds after a stop of the irradiation with the ArF excimer laser light is not more than 0.002 cm . When this silica glass member is applied to an illumination optical system and/or a projection optical system in projection exposure apparatus, it becomes feasible to implement uniform exposure while reducing variation in illuminance on a reticle surface and in an exposure area on a wafer.

公开(公告)号：EP1712528A2

公开(公告)日：2006-10-18

申请号：EP06112628.0

申请日：2006-04-13

Applicant: Heraeus Quarzglas GmbH & Co. KG

Inventor： Kuehn, Bodo ,  Ochs, Stefan ,  Kaiser, Steffen ,  Kassube, Denis

IPC: C03C3/06 ,  C03C4/00 ,  C03B19/14 ,  G02B1/00

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B19/1469 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/21 ,  C03C4/0085 ,  C03C2201/11 ,  C03C2201/12 ,  C03C2201/21 ,  C03C2201/23 ,  Y02P40/57

Abstract: Um ein optisches Bauteil aus Quarzglas zur Verwendung in einem Projektionsobjektiv für die Immersions-Lithographie mit einer Arbeitswellenlänge unterhalb von 250 nm bereit zu stellen, das für den Einsatz mit linear polarisierter UV-Laserstrahlung und insbesondere hinsichtlich Kompaktierung und durch anisotrope Dichteänderung induzierte Doppelbrechung optimiert ist, wird erfindungsgemäß vorgeschlagen, dass das Quarzglas die Kombination mehrerer Eigenschaften aufweist: insbesondere eine Glasstruktur im wesentlichen ohne Sauerstoffdefektstellen, einen mittleren Gehalt an Hydroxylgruppen von weniger als 60 Gew.-ppm, einen mittleren Gehalt an Fluor von weniger als 10 Gew.-ppm, einen mittleren Gehalt an Chlor von weniger als 1 Gew.-ppm. Ein Verfahren zur Herstellung eines derartigen optischen Bauteils umfasst folgende Verfahrensschritte: Herstellen und Trocknen eines SiO 2- Sootkörpers unter reduzierenden Bedingungen und Behandeln des getrockneten Sootkörpers vor oder während des Verglasens mit einem Reagenz, das mit Sauerstoff-Fehlstellen der Quarzglasstruktur reagiert.

Abstract translation: 对于在250nm的石英玻璃中的工作波长用作投影/物镜用于浸没式光刻的石英玻璃光学部件具有属性:.玻璃结构缺乏氧缺陷部位; 平均氢含量1X10 16> -1×10 17>分子/ sq.cm; 意味着SiH基含量小于5×10 17>分子/ sq.cm; 意味着OH基团含量小于60重量ppm; 意指F含量小于10重量ppm; 意味着Cl含量小于1个重量ppm; 以上1040 [℃实施和虚部（虚拟原文如此）温度 一个独立的claimsoft包括用于制造由二氧化硅2soot体的部件的方法。

公开(公告)号：EP1368711A4

公开(公告)日：2006-07-19

申请号：EP01995254

申请日：2001-11-28

Applicant: CORNING INC

Inventor： MOORE LISA A ,  SMITH CHARLENE M

IPC: C03B8/04 ,  C03B19/14 ,  C03B20/00 ,  C03C3/06 ,  C03C4/00 ,  G02B1/00 ,  G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00 ,  C03C15/00 ,  G21K5/00

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content

Abstract translation: 公开了具有优选的氟含量<0.5重量％的氟氧化硅玻璃，适合用作用于光刻法应用于190nm以下的VUV波长区域的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在约157nm的波长下是透射的，使得其在157nm波长区域作为光掩模衬底特别有用。 本发明的光掩模衬底是“干燥的”氟氧化硅玻璃，其在真空紫外（VUV）波长区域中显示出非常高的透射率，同时保持通常与高纯度熔融二氧化硅相关的优异的热和物理性能。 除了含氟并且几乎没有或没有OH含量之外，本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

公开(公告)号：EP1332116A4

公开(公告)日：2005-04-13

申请号：EP01968806

申请日：2001-09-12

Applicant: CORNING INC

Inventor： BROWN JOHN T ,  DOBBINS MICHAEL S ,  HECKLE CHRISTINE E ,  MCLAY ROBERT E ,  MISRA MAHENDRA K ,  POWERS DALE R ,  WASILEWSKI MICHAEL H

IPC: C03B8/04 ,  C03B19/14 ,  C03B20/00

CPC classification number: C03B19/1423 ,  C03B19/1415 ,  C03B2201/03 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/06 ,  C03B2207/12 ,  C03B2207/20 ,  C03B2207/22 ,  C03B2207/32 ,  C03B2207/36

Abstract: A method for preparing high-purity, bulk fused silica includes supplying silane gas (11), a gaseous fuel (8), and oxygen gas (10B) to a combustion burner (14). A fuel and oxygen mixture (13) is produces when fuel (8) and oxygen gas (10A) in a premixing chamber (12). Nitrogen gas (17A) may also be supplied to the burner (14) which is located in the crown (16) of a furnace (15). Silica particles are formed by passing the silane gas into a flame formed by the combustion reaction of the gaseous fuel with the oxygen gas while maintaining the ratio of the flow rate of the gaseous fuel to the flow rate of the silane gas no less than twelve and the ratio of the flow rate of the gaseous fuel to the flow rate of the oxygen gas no less than three. Silane flow rates are controlled with a mass flow controller (51) and the flow of other gasses is monitored with flow meters (49). The silica particles formed are immediately deposited onto a hot bait (18) inside a containment vessel (21) to form a boule (19).

公开(公告)号：EP1281680A3

公开(公告)日：2004-11-03

申请号：EP02255384.6

申请日：2002-08-01

Applicant: Corning Incorporated

Inventor： Ball Laura Jane ,  Rakotoarison Sylvain

IPC: C03B19/14

CPC classification number: C03B19/1423 ,  C03B19/01 ,  C03B19/1415 ,  C03B2201/07 ,  C03B2201/08 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/30 ,  C03B2201/31 ,  C03B2201/32 ,  C03B2201/34 ,  C03B2201/42 ,  C03B2201/50 ,  C03B2201/54 ,  C23C16/401 ,  C23C16/513

Abstract: A method of making fused silica includes generating a plasma, delivering reactants comprising a silica precursor into the plasma to produce silica particles, and depositing the silica particles on a deposition surface to form glass; also a photomask material obtainable by the method is claimed.

公开(公告)号：EP1394127A1

公开(公告)日：2004-03-03

申请号：EP02720535.0

申请日：2002-04-19

Applicant: Nikon Corporation

Inventor： KOMINE, Norio ,  YOSHIDA, Akiko ,  JINBO, Hiroki ,  FUJIWARA, Seishi

IPC: C03C3/06 ,  G02B1/00 ,  H01L21/027

CPC classification number: C03C4/0071 ,  C03B19/1423 ,  C03B19/1453 ,  C03B19/1492 ,  C03B2201/07 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/00 ,  C03C3/06 ,  C03C2201/11 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/40 ,  C03C2203/44 ,  C03C2203/46 ,  C03C2203/52 ,  C03C2203/54 ,  G02B1/02 ,  G02B13/143 ,  G03F7/70241 ,  G03F7/70958

Abstract: A silica glass member of the present invention is one wherein when a composition thereof is expressed by SiO x , x is not less than 1.85 nor more than 1.95, wherein a concentration of hydrogen molecules included therein is not less than 1×10 16 molecules/cm 3 nor more than 5×10 18 molecules/cm 3 , and wherein a difference A-B between an absorption coefficient A immediately before an end of irradiation with 1×10 4 pulses of ArF excimer laser light in an average one-pulse energy density of 2 mJ/cm 2 and a second absorption coefficient B at 600 seconds after a stop of the irradiation with the ArF excimer laser light is not more than 0.002 cm -1 . When this silica glass member is applied to an illumination optical system and/or a projection optical system in projection exposure apparatus, it becomes feasible to implement uniform exposure while reducing variation in illuminance on a reticle surface and in an exposure area on a wafer.

Abstract translation: 本发明的石英玻璃构件是当其组成由SiO x表示时，x不小于1.85或不大于1.95，其中包含的氢分子的浓度不小于1×10 16分子/ cm 3分子量以上且5×10 18分子/ cm 3以下，并且其中在照射结束前的吸收系数A与1×10 4脉冲的ArF准分子激光的平均单脉冲之间的差异AB 用ArF准分子激光照射停止600秒后的能量密度为2mJ / cm 2，第二吸收系数B为0.002cm -1以下。 当将该石英玻璃构件应用于投影曝光装置中的照明光学系统和/或投影光学系统时，可以实现均匀曝光，同时减小掩模版面和晶片上曝光区域中的照度变化。

公开(公告)号：EP0917523B1

公开(公告)日：2003-07-30

申请号：EP98928299.1

申请日：1998-05-20

Applicant: Heraeus Quarzglas GmbH & Co. KG ,  SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

Inventor： OHASHI, Norio ,  KURIYAMA, Michiyo ,  YAMAGATA, Shigeru ,  SUNADA, Shigemasa

IPC: C03B19/14 ,  C03C3/06 ,  C03C23/00 ,  G02B1/00

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B23/047 ,  C03B32/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/32 ,  C03C2201/11 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/52

Abstract: An object of the present invention is to provide a synthetic silica glass optical material which exhibits excellent transmittance as well as durability for high output power vacuum ultraviolet rays, being emitted from, for example, ArF excimer lasers and Xe2 excimer lamps, and to provide a method for producing the same. A synthetic silica glass optical material for high output power vacuum ultraviolet rays made from ultra high purity synthetic silica glass for use in the wavelength region of from 165 to 195 nm, containing OH groups at a concentration of from 5 to 300 wtppm with a fluctuation width in OH group concentration ( DELTA OH/cm) of 10 wtppm or less, containing hydrogen molecules at a concentration of from 1 x 10 to 1 x 10 molecule/cm with a fluctuation width in hydrogen molecule concentration ( DELTA H2/cm) of 1 x 10 molecule/cm or lower, and containing chlorine at a concentration of 50 wtppm or lower. Also claimed is a method for producing the same.

公开(公告)号：EP0915065B1

公开(公告)日：2003-05-21

申请号：EP97930777.4

申请日：1997-07-14

Applicant: Toyota Jidosha Kabushiki Kaisha ,  Toyota School Foundation

Inventor： SAITOH, Kazuya, Toyota School Foundation ,  IKUSHIMA, Akira, Toyota School Foundation

IPC: C03C13/04

CPC classification number: C03C13/046 ,  C03B37/014 ,  C03B2201/07 ,  C03B2201/30 ,  C03B2201/50 ,  C03B2201/54 ,  C03C3/06 ,  C03C2201/40 ,  C03C2201/50 ,  C03C2201/54 ,  G02B6/02

Abstract: A ultralow-loss silica glass characterized by comprising a high-purity silica glass and at least one network-modifying oxide in an amount of 1 to 500 ppm (by weight). The oxide is considered to suitably relax the tetrahedral network structure of silica so as to lower the Rayleigh scattering loss. Examples of the network modifying oxides usable herein include Na>2 2 2