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公开(公告)号：KR1020140126273A
公开(公告)日：2014-10-30
申请号：KR1020140095984
申请日：2014-07-28
Applicant: 성균관대학교산학협력단
Abstract: Disclosed is a large area plasma generating apparatus capable of adjusting a plasma generation region. The plasma generating apparatus comprises a vacuum chamber in which plasma is generated, a susceptor which is provided in the vacuum chamber and on which a substrate is mounted, and a plasma generation region limiting member which limits a plasma generation region. The plasma generation region limiting member includes two pairs of plasma generation region limiting members which are disposed to face each other so as to surround four sides of the plasma generation region. The width of one pair of plasma generation region limiting members is narrower than the width of the other pair of plasma generation region limiting members.
Abstract translation: 公开了能够调整等离子体产生区域的大面积等离子体发生装置。 等离子体发生装置包括：在其中产生等离子体的真空室，设置在真空室中并且其上安装有基板的基座;以及限制等离子体产生区域的等离子体产生区域限制部件。 等离子体产生区域限制构件包括两对等离子体产生区域限制构件，其被设置成围绕等离子体产生区域的四个侧面彼此相对。 一对等离子体产生区域限制部件的宽度比另一对等离子体产生区域限制部件的宽度窄。
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公开(公告)号：KR1020140125120A
公开(公告)日：2014-10-28
申请号：KR1020130042874
申请日：2013-04-18
Applicant: 성균관대학교산학협력단
IPC: H05H1/46
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/3211 , H01J37/32174 , H01J37/32532 , H05H2001/4652 , H05H2001/4667 , H05H2001/4675 , H05H2001/4682
Abstract: 복수 개의 유도 결합형 안테나 및 복수 개의 용량 결합형 안테나가 서로 교번하여 배치되는 하이브리드 플라즈마 소스 및 이를 이용한 플라즈마 발생장치가 개시된다. 상기 두 가지의 다른 형태의 안테나에 각각 전력을 인가함으로써, 공정에서 중요한 요소인 플라즈마의 밀도, 전자온도, 균일도 등을 조절 가능하게 함으로써, 유도 결합형 플라즈마 소스와 용량 결합형 플라즈마 소스 각각이 가지고 있는 문제점을 해결할 수 있다.
Abstract translation: 公开了一种混合等离子体源，其中交替布置多个电感耦合天线和多个电容耦合天线，以及用于使用该等离子体产生等离子体的装置。 为了控制等离子体的密度，电子温度和均匀性，这两种类型的天线都被施加电力，这是工艺的重要元件。 因此，本发明解决了电感耦合天线和电容耦合天线中的每一个具有的问题。
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公开(公告)号：KR1020130011922A
公开(公告)日：2013-01-30
申请号：KR1020120074309
申请日：2012-07-09
Applicant: 성균관대학교산학협력단
CPC classification number: H01L21/042 , H01L21/0405 , H01L29/1606 , H01L29/66037 , C01B32/194 , B01J19/084 , B01J19/12 , C01B32/19 , C01B2204/04
Abstract: PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control the etching depth of graphene, to be processed uncomplicatedly, and to be commercialized. CONSTITUTION: An atomic layer etching method includes the following steps: absorbing a reactive radical on the surface of graphene; irradiating an energy source in graphene absorbed in the reactive radical; the two steps are repeated over two times; the graphene includes the thin film of overlapped multi-layer graphene; a singular layer of the thin film of graphene is etched by performing the atomic layer etching method one time; the reactive radical is generated with plasma.
Abstract translation: 目的：提供原子层蚀刻方法，以原子为单位控制石墨烯蚀刻，选择性地控制石墨烯的蚀刻深度，不需要复杂处理，并进行商业化处理。 构成：原子层蚀刻方法包括以下步骤：在石墨烯的表面上吸收反应性基团; 在吸收在反应性基团中的石墨烯中照射能量源; 两步重复两次; 石墨烯包括重叠的多层石墨烯薄膜; 通过一次执行原子层蚀刻方法蚀刻石墨烯薄膜的单层; 用等离子体产生反应性基团。
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公开(公告)号：KR1020130011648A
公开(公告)日：2013-01-30
申请号：KR1020110072953
申请日：2011-07-22
Applicant: 성균관대학교산학협력단
CPC classification number: C01B32/194 , B01J19/28
Abstract: PURPOSE: A graphene etching device and a graphene etching method using the same are provided to prevent additional etching by performing discharging without remaining reactive gas. CONSTITUTION: A graphene etching device is composed of a buffer chamber(200), an adsorption chamber(100), and a desorption chamber(300). A graphene substrate(500) is loaded in the buffer chamber. An adsorption process is performed in the adsorption chamber for the graphene substrate. A desorption process is performed in the desorption chamber for the graphene substrate. The buffer chamber is placed between the adsorption chamber and the desorption chamber. The buffer chamber includes a transfer device(210), and the transfer device transfers the graphene substrate to the inside of the adsorption chamber or the desorption chamber. The graphene substrate adsorbed in the adsorption chamber is transferred to the buffer chamber, in standby for a previously set time, and transferred to the desorption chamber. [Reference numerals] (AA) Exhaust
Abstract translation: 目的：提供石墨烯蚀刻装置和使用其的石墨烯蚀刻方法，以通过在没有残留的反应气体的情况下进行放电来防止附加蚀刻。 构成：石墨烯蚀刻装置由缓冲室（200），吸附室（100）和解吸室（300）构成。 石墨烯衬底（500）装载在缓冲室中。 在用于石墨烯衬底的吸附室中进行吸附过程。 在用于石墨烯衬底的解吸室中进行解吸处理。 缓冲室被放置在吸附室和解吸室之间。 缓冲室包括转移装置（210），并且转移装置将石墨烯衬底转移到吸附室或解吸室的内部。 吸附在吸附室中的石墨烯衬底被转移到缓冲室中，待机预先设定的时间，并转移到解吸室。 （附图标记）（AA）排气
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公开(公告)号：KR1020120060017A
公开(公告)日：2012-06-11
申请号：KR1020100121567
申请日：2010-12-01
Applicant: 성균관대학교산학협력단
CPC classification number: H05H1/46 , H01J37/3211 , H01J37/32458 , H01J37/32669 , H05H2001/4667
Abstract: PURPOSE: A plasma sources and a plasma generating apparatus including the same are provided to intensify a magnetic field induced through ferrite by mounting an arc-shaped ferrite structure on a helical antenna coil. CONSTITUTION: A plasma generating device(1) comprises a reaction chamber(10), a plasma source(20), a dielectric structure(30), and a power supply unit(40). The reaction chamber forms a reaction space for processing a substrate. A gas nozzle(11) is formed in the sidewall of the reaction chamber to let in the reaction gas from the outside. The plasma source is composed of an antenna coil(21) and a ferrite structure(23). The dielectric structure insulates the reaction chamber and the plasma source. The power supply unit is electrically connected to one end of the helical antenna coil.
Abstract translation: 目的：提供一种等离子体源和包括该等离子体源的等离子体产生装置，以通过在弧形天线线圈上安装弧形铁氧体结构来增强由铁素体引起的磁场。 构成：等离子体产生装置（1）包括反应室（10），等离子体源（20），电介质结构（30）和电源单元（40）。 反应室形成用于处理基板的反应空间。 气体喷嘴（11）形成在反应室的侧壁中以从外部引入反应气体。 等离子体源由天线线圈（21）和铁氧体结构（23）构成。 电介质结构使反应室和等离子体源绝缘。 电源单元电连接到螺旋天线线圈的一端。
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Patent Agency Ranking
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公开(公告)号：KR1020110115820A
公开(公告)日：2011-10-24
申请号：KR1020100035367
申请日：2010-04-16
Applicant: 성균관대학교산학협력단
CPC classification number: H01L51/0021 , H01L51/442 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L51/5221
Abstract: 일 실시예에 따르는 유기 전자 소자는 유기 기능층 및 상기 유기 기능층과 접하는 가요성 투명 전도층을 구비한다. 상기 가요성 투명 전도층은 n형 또는 p형의 특성을 가지는 그라핀 시트층을 포함한다.
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公开(公告)号：KR1020110098693A
公开(公告)日：2011-09-01
申请号：KR1020110018138
申请日：2011-02-28
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01L21/67069 , H01J37/32082 , H01L21/67167
Abstract: 본 발명은 저손상 공정을 위한 차세대 나노소자용 식각 장비에 관한 것이다. 본 발명에 의하면, 차세대 나노소자 제작시 나노소자의 저손상 공정이 가능하거나, 고유전 물질을 게이트 절연막으로 이용함으로써 발생되는 게이트 리세스를 발생시키지 않거나, 차세대 나노소자 공정에 발생될 수 있는 물리적 전기적 손상을 크게 개선시키거나, 정확한 식각 조절이 가능하고, 딥 식각, 중성빔 식각 및 중성빔 원자층 식각이 인시투(in-situ)로 이루어질 수 있는 식각 장비가 제공된다.
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公开(公告)号：KR1020110098199A
公开(公告)日：2011-09-01
申请号：KR1020100017680
申请日：2010-02-26
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065 , H01L21/8247 , H01L27/115
CPC classification number: H01J37/32146 , H01J37/32091 , H01J37/32706 , H01L43/12 , H01L21/67063
Abstract: 본 발명은 식각 방법에 관한 것이다. 본 발명에 의하면, RF 파워를 온 주기 및 오프 주기를 반복하고, 기재(substrate)에 상기 온 주기 및 오프 주기에 대응하여 각각 마이너스 파워 주기 및 플러스 파워 주기를 반복하여 상기 기재 상의 피식각물을 식각하는 식각 방법이 제공된다.
Abstract translation: 蚀刻方法技术领域本发明涉及蚀刻方法。 根据本发明，重复的RF电源接通周期和关断周期，响应于所述导通周期和截止周期，其中，所述基体材料（基材）的每个重复负功率周期和在衬底上蚀刻的蚀刻gakmul的正功率周期 提供蚀刻方法。
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公开(公告)号：KR101059072B1
公开(公告)日：2011-08-24
申请号：KR1020100066149
申请日：2010-07-09
Applicant: 성균관대학교산학협력단
IPC: H01L31/04
Abstract: PURPOSE: A solar cell using graphene and a manufacturing method thereof are provided to easily manufacture a solar cell with a predetermined open circuit voltage by controlling the number of graphene unit layers. CONSTITUTION: A solar cell(100) comprises an anode electrode(110), a cathode electrode(140), a graphene layer(130), a semiconductor layer(120), and a photo reactive layer. The cathode electrode is arranged by being separated with the anode electrode. The graphene layer and the semiconductor layer are arranged between the anode electrode and the cathode electrode. The photo reactive layer generates electronics or a hole in response to entered light while being located in the interface of the semiconductor layer and the graphene layer. The graphene layer includes one or more graphene unit layers. The number of graphene unit layers, which constitutes the graphene layer, is controlled based on work function difference between the semiconductor layer and the graphene layer.
Abstract translation: 目的：提供使用石墨烯的太阳能电池及其制造方法，通过控制石墨烯单元层的数量容易地制造具有规定的开路电压的太阳能电池。 构成：太阳能电池（100）包括阳极电极（110），阴极电极（140），石墨烯层（130），半导体层（120）和光反应层。 阴极通过与阳极电极分离而布置。 石墨烯层和半导体层布置在阳极和阴极之间。 光反应层在位于半导体层和石墨烯层的界面中时响应于入射光产生电子学或孔。 石墨烯层包括一个或多个石墨烯单元层。 构成石墨烯层的石墨烯单元层的数量是基于半导体层和石墨烯层之间的功函数差来控制的。
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