公开(公告)号：KR1020110055702A

公开(公告)日：2011-05-25

申请号：KR1020117007197

申请日：2009-09-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼다미노루 ,  고노마사유키 ,  오타오슈이치로

IPC: H01L21/318 ,  H01L21/205

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/511 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 본 발명은, 복수의 구멍을 갖는 평면 안테나에 의해 처리 용기 내에 마이크로파를 도입하여 플라즈마를 생성하는 플라즈마 CVD 장치를 이용하여, 처리 용기 내의 압력을 0.1Pa 이상 6.7Pa 이하의 범위 내로 설정하고, SiCl
4 가스와 산소 함유 가스를 포함하는 성막 원료 가스를 이용하여 플라즈마 CVD를 행함으로써 수소 농도가 9.9×10
20 atoms/㎤ 이하의 질화 규소막을 형성하는 방법에 관한 것이다.

公开(公告)号：KR1020100129311A

公开(公告)日：2010-12-08

申请号：KR1020107021877

申请日：2009-03-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼다미노루 ,  나카니시도시오 ,  고노마사유키 ,  니시타다츠오 ,  미야하라준야

IPC: H01L21/318 ,  H01L21/205

CPC classification number: C23C16/345 ,  C23C16/45523 ,  C23C16/511 ,  H01J37/32192 ,  H01J2237/3321 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/28282

Abstract: CVD법으로 밴드갭의 크기를 제어하여 질화규소막을 제조하기 위해, 복수의 구멍을 갖는 평면 안테나(31)에 의해 처리 용기(1)에 마이크로파를 도입하는 플라즈마 CVD 장치(100)에 있어서, 0.1 Pa 이상 1333 Pa 이하의 범위 내에서 선택되는 일정한 처리 압력으로, 실리콘 함유 화합물 가스와 질소 가스의 유량비(실리콘 함유 화합물 가스 유량/질소 가스 유량)를 0.005 이상 0.2 이하의 범위 내에서 선택하여 플라즈마 CVD를 수행하고, 막 내에 포함되는 Si/N의 비를 제어하여 밴드갭의 크기가 2.5 eV 이상 7 eV 이하의 범위 내에 있는 질화규소막을 형성한다.

公开(公告)号：KR1020090094033A

公开(公告)日：2009-09-02

申请号：KR1020097014667

申请日：2007-12-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼다미노루 ,  사토요시히로 ,  나카니시도시오

IPC: H01L21/318 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/28202 ,  H01J37/32192 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/02255 ,  H01L21/2254

Abstract: A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2nm but not more than 1nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.

Abstract translation: 一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm〜1nm的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。 该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

公开(公告)号：KR1020090094009A

公开(公告)日：2009-09-02

申请号：KR1020097013433

申请日：2007-12-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼다미노루 ,  사토요시히로 ,  나카니시도시오

IPC: H01L21/318 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/28202 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/02172 ,  H01L21/02225 ,  H01L21/2254

Abstract: A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon; a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film; and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.

Abstract translation: 一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对表面上的硅进行氧化，在硅表面形成氧化硅薄膜的工序; 对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜; 以及在N 2 O气氛中对氮氧化硅膜进行第一热处理的工序。 在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

公开(公告)号：KR1020050106387A

公开(公告)日：2005-11-09

申请号：KR1020050101545

申请日：2005-10-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오니시다다시 ,  하마마나부 ,  혼다미노루 ,  미츠오카가즈유키 ,  이와시타미츠아키

IPC: H01L21/205

CPC classification number: H01L21/02351 ,  C23C16/56 ,  H01J37/317 ,  H01J2237/004 ,  H01J2237/3156 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/2636 ,  H01L21/312 ,  H01L21/67069 ,  H01L21/67253

Abstract: In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

公开(公告)号：KR1020040048868A

公开(公告)日：2004-06-10

申请号：KR1020030087733

申请日：2003-12-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미쓰오카가즈유키 ,  오니시다다시 ,  혼다미노루 ,  아사코류이치 ,  이와시타미쓰아키

IPC: H01L21/283

CPC classification number: H01L21/02137 ,  B05D1/005 ,  B05D3/068 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3124

Abstract: PURPOSE: A method of processing an organic material layer is provided to improve the adhesion between the organic material layer and a polarized liquid material layer, to sustain low-k of the organic material layer, and to increase mechanical intensity of the organic material layer by irradiating an electron beam to the organic material layer using an electron beam irradiation apparatus. CONSTITUTION: An organic material layer is formed on a substrate(W). A reforming process for curing the organic material layer and providing simultaneously the affinity for a polarized liquid material layer to the organic material layer is performed under an inert gas atmosphere by irradiating an electron beam to the organic material layer using an electron beam irradiation apparatus(1). The polarized liquid material layer is coated on the organic material layer.

Abstract translation: 目的：提供一种处理有机材料层的方法，以改善有机材料层和极化液体材料层之间的粘附力，以维持有机材料层的低k值，并通过以下方式提高有机材料层的机械强度 使用电子束照射装置向有机材料层照射电子束。 构成：在基板（W）上形成有机材料层。 通过使用电子束照射装置（1）向有机材料层照射电子束，在惰性气体气氛下进行固化有机材料层并同时提供对极化液体材料层与有机材料层的亲和力的重整工艺 ）。 偏振液体材料层涂覆在有机材料层上。