-
公开(公告)号：KR1020130020424A
公开(公告)日：2013-02-27
申请号：KR1020110083054
申请日：2011-08-19
Applicant: 삼성전자주식회사
IPC: H01L21/02 , H01L21/336 , H01L29/78 , H01L21/786
CPC classification number: H01L29/1606 , H01L21/2007 , Y10T156/10 , Y10T428/2457 , Y10T428/24612 , H01L21/76831 , H01L29/42356 , H01L29/4236 , H01L29/66015 , H01L29/66045 , H01L29/772
Abstract: PURPOSE: A method for transferring graphene using a trench and a graphene transfer target substrate are provided to reduce the time of a dry process by efficiently evaporating adhesive solutions using the trench. CONSTITUTION: A trench(110) is formed on the upper side of a substrate(100) by patterning the substrate. A graphene layer wet with the adhesive solutions is arranged on the substrate. The graphene layer is pressurized on the substrate. The adhesive solutions are removed by drying the substrate.
Abstract translation: 目的：提供使用沟槽和石墨烯转移目标衬底转移石墨烯的方法，以通过使用沟槽有效地蒸发粘合剂溶液来减少干法工艺的时间。 构成：通过图案化衬底，在衬底（100）的上侧形成沟槽（110）。 用粘合剂溶液润湿的石墨烯层布置在基底上。 石墨烯层在基材上加压。 通过干燥基底来除去粘合剂溶液。
-
-
-
公开(公告)号：KR101920712B1
公开(公告)日：2018-11-22
申请号：KR1020110085820
申请日：2011-08-26
Applicant: 삼성전자주식회사
IPC: H01L29/06 , H01L29/772
CPC classification number: H01L29/1606 , B82Y10/00 , H01L29/0895 , H01L29/165 , H01L29/41725 , H01L29/778 , H01L29/7781 , H01L29/78684
Abstract: 튜너블배리어를구비한그래핀스위칭소자가개시된다. 개시된스위칭소자는백게이트기판상의게이트옥사이드와, 상기게이트옥사이드상의그래핀층과, 상기그래핀층에순차적으로적층된반도체층및 제1전극과, 상기그래핀층에서상기반도체층과이격된제2전극을구비한다. 상기백게이트기판과상기그래핀층은상기반도체층을사이에두고마주보며, 상기반도체층은 n형또는 p형으로도핑된다.
-
公开(公告)号：KR101910579B1
公开(公告)日：2018-10-22
申请号：KR1020120120611
申请日：2012-10-29
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: H01L29/78 , H01L29/1606 , H01L29/407 , H01L29/66977 , H01L29/772 , H01L29/872 , H01L29/88
Abstract: 튜너블배리어를구비한그래핀스위칭소자가개시된다. 개시된그래핀스위칭소자는도전성반도체기판상에서서로이격된제1영역및 제2영역에각각배치된제1 전극및 절연층과, 상기절연층상에서상기제1 전극을향하여상기기판상으로연장되며상기제1 전극과이격된그래핀층과, 상기그래핀층상에서상기절연층과마주보는제2 전극과, 상기그래핀층상방의게이트전극과, 상기그래핀층하부와접촉하는상기기판의영역이불순물로도핑된제1 우물을포함한다. 상기제1 우물은상기그래핀층과상기제1 전극사이에에너지장벽을형성한다.
-
Patent Agency Ranking
公开(公告)号：KR101813185B1
公开(公告)日：2018-01-30
申请号：KR1020160082967
申请日：2016-06-30
Applicant: 삼성전자주식회사
IPC: G03F1/66 , G03F1/00 , G03F7/20 , H01L21/285 , H01L21/033 , H01L21/02
CPC classification number: G03F1/62 , G03F1/22 , G03F1/48 , G03F1/64 , G03F7/70058 , G03F1/66 , G03F1/142 , G03F7/70033 , G03F7/70916 , G03F7/70958 , H01L21/02485 , H01L21/02568 , H01L21/0337 , H01L21/28568
Abstract: 포토마스크를외부의오염으로부터보호하는포토마스크용펠리클및 이펠리클을포함하는노광장치가개시된다. 개시된포토마스크용펠리클은상기포토마스크와이격되게마련되는펠리클멤브레인을포함한다. 여기서, 펠리클멤브레인은 2차원형상의결정구조를가지는반도체를포함한다.
Abstract translation: 公开了保护光掩模免受外部污染的光掩模薄膜和包括薄膜的曝光装置。 所公开的用于光掩模的薄膜包括与光掩模间隔开的薄膜。 这里，薄膜包括具有二维晶体结构的半导体。
-
公开(公告)号：KR101813179B1
公开(公告)日：2017-12-29
申请号：KR1020110056341
申请日：2011-06-10
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/778 , H01L29/1606 , H01L29/513
Abstract: 복층의게이트절연층을구비한그래핀전자소자가개시된다. 개시된그래핀전자소자는그래핀채널층과게이트전극사이에유기물절연층과무기물절연층으로이루어진복층의게이트절연층을구비한다. 유기물절연층은그래핀채널층에불순물이흡착하는것을억제하여그래핀채널층의고유특성을유지한다.
Abstract translation: 公开了具有多层栅极绝缘层的石墨烯电子器件。 所公开的石墨烯电子器件具有由石墨烯沟道层和栅电极之间的有机绝缘层和无机绝缘层构成的多层栅极绝缘层。 有机绝缘层抑制杂质向石墨烯沟道层的吸附，由此保持石墨烯沟道层的固有特性。
-
38.发明公开복합체, 이를 이용한 탄소 복합체, 이를 포함한 전극, 리튬 전지, 전계 방출 소자, 바이오센서, 반도체 소자 및 열전소자 审中-实审使用复合材料，电极，锂电池，场发射装置，生物传感器和包括其的半导体器件的复合材料，碳复合材料
公开(公告)号：KR1020150141924A
公开(公告)日：2015-12-21
申请号：KR1020150170674
申请日：2015-12-02
Applicant: 삼성전자주식회사
IPC: H01M4/587 , H01M4/38 , H01M4/48 , H01M4/134 , H01M4/133 , G01N27/327 , G01N33/487 , H01L35/12
Abstract: 실리콘(Si); 상기실리콘상에형성된실리콘산화물(SiOx)(O
Abstract translation: 公开了一种复合材料，其包括：硅（Si）; 形成在硅上的氧化硅（SiO_x，O
-
公开(公告)号：KR1020140103022A
公开(公告)日：2014-08-25
申请号：KR1020130143914
申请日：2013-11-25
Applicant: 삼성전자주식회사
Abstract: The present invention provides a graphene device and an electronic apparatus including the same. The graphene device comprises: a transistor including a source, a gate, and a drain; an active layer in which a carrier can move; and a graphene layer which is arranged between the gate and the active layer and performs a role of an electrode of the active layer and a channel layer of the transistor.
Abstract translation: 本发明提供一种石墨烯装置和包括该石墨烯装置的电子设备。 石墨烯装置包括：晶体管，其包括源极，栅极和漏极; 载体可以移动的有源层; 以及布置在栅极和有源层之间并且起到有源层的电极和晶体管的沟道层的作用的石墨烯层。
-
公开(公告)号：KR1020140054744A
公开(公告)日：2014-05-09
申请号：KR1020120120611
申请日：2012-10-29
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: H01L29/78 , H01L29/1606 , H01L29/407 , H01L29/66977 , H01L29/772 , H01L29/872 , H01L29/88
Abstract: Disclosed is a graphene switching device having a tunable barrier. The disclosed graphene switching device includes a first electrode and an insulating layer which are respectively arranged in a first region and a second region which are separated from each other on a conductive semiconductor substrate, a graphene layer which is extended from the insulating layer to the first electrode on the substrate and is separated from the first electrode, a second electrode which faces the insulating layer on the graphene layer, a gate electrode above the graphene layer, and a first well which has a region of the substrate which touches the lower part of the graphene layer which is doped with impurity. The first wall has an energy barrier which is between the graphene layer and the first electrode.
Abstract translation: 公开了一种具有可调屏障的石墨烯开关装置。 所公开的石墨烯开关装置包括分别布置在导电半导体衬底上彼此分离的第一区域和第二区域中的第一电极和绝缘层，从绝缘层延伸到第一区域的石墨烯层 电极与第一电极分离，面对石墨烯层上的绝缘层的第二电极，石墨烯层上方的栅极电极和第一阱，该第一阱具有接触下述部分的基板的下部 掺杂有杂质的石墨烯层。 第一壁具有在石墨烯层和第一电极之间的能量势垒。
-
-
-
-
-
-
-
-
-
Search Results
43
records
(took 0.026 seconds)
