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公开(公告)号：KR1020130076530A
公开(公告)日：2013-07-08
申请号：KR1020110145157
申请日：2011-12-28
Applicant: 삼성전자주식회사
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: PURPOSE: An ultrasonic wave converter structure, an ultrasonic wave converter, and a manufacturing method thereof are provided to increase reliability for long time operation by minimizing electrically connected parts of a first circuit board and a second circuit board. CONSTITUTION: A driving wafer (10) includes a driving circuit. An ultrasonic wave converter wafer (20) is included on the driving wafer. The ultrasonic wave converter includes a first wafer and a second wafer. The first wafer includes a connecting hole. The second wafer is separately arranged from the first wafer.
Abstract translation: 目的：提供超声波转换器结构，超声波转换器及其制造方法，通过使第一电路板和第二电路板的电连接部分最小化来提高长时间运行的可靠性。 构成：驱动晶片（10）包括驱动电路。 超声波转换晶片（20）包括在驱动晶片上。 超声波转换器包括第一晶片和第二晶片。 第一晶片包括连接孔。 第二晶片与第一晶片分开布置。
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公开(公告)号：KR1020120080882A
公开(公告)日：2012-07-18
申请号：KR1020110002340
申请日：2011-01-10
Applicant: 삼성전자주식회사
CPC classification number: H04R3/04 , H04R1/24 , H04R17/00 , H04R2201/003
Abstract: PURPOSE: An acoustic transducer and a driving method thereof are provided to obtain uniform frequency response characteristics in a broadband by driving one or more of a plurality of drive unit groups having different frequency response characteristics of different frequency bands with other drive unit groups in different phases. CONSTITUTION: An acoustic transducer includes a plurality of drive unit groups(10,20,30) having different frequency response characteristics. One or more of drive unit groups are driven with other drive unit groups in different phases. The acoustic transducer can be composed of a piezoelectric acoustic transducer. The acoustic transducer includes first, second, and third drive unit groups having the different frequency response characteristics of different frequency bands.
Abstract translation: 目的：提供一种声换能器及其驱动方法，通过驱动具有不同频带的不同频率响应特性的多个驱动单元组中的一个或多个与其他驱动单元组在不同阶段中来获得均匀的频率响应特性 。 构成：声换能器包括具有不同频率响应特性的多个驱动单元组（10,20,30）。 一个或多个驱动单元组由不同阶段的其他驱动单元组驱动。 声换能器可以由压电声换能器组成。 声换能器包括具有不同频带的不同频率响应特性的第一，第二和第三驱动单元组。
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公开(公告)号：KR1020110034960A
公开(公告)日：2011-04-06
申请号：KR1020090092470
申请日：2009-09-29
Applicant: 삼성전자주식회사
CPC classification number: H04R17/00 , H04R2201/003 , H04R2307/025 , H04R2499/11 , Y10T29/42 , Y10T29/49005
Abstract: PURPOSE: A piezoelectric micro speaker having a curve lead line and manufacturing method thereof are provided to reduce structural rigidity which obstructs the vibration of a vibration layer by forming lead lines in a curve form. CONSTITUTION: A substrate(110) includes a cavity(112) which is penetrated in a thickness direction. A diaphragm includes a first vibration film and a second vibration film. The first vibration film is formed in the top of the substrate in order to cover the cavity. The second vibration film is includes the first vibration film and the other material. A piezoelectric driving unit(130) includes a first electrode layer(132), a piezoelectric layer(134), and a second electrode layer. A first lead line and a second lead line are connected to the first electrode layer and the second electrode layer.
Abstract translation: 目的：提供一种具有曲线引线的压电微型扬声器及其制造方法，以通过以曲线形式形成引线来降低阻碍振动层振动的结构刚性。 构成：衬底（110）包括在厚度方向上穿透的空腔（112）。 隔膜包括第一振动膜和第二振动膜。 第一振动膜形成在基板的顶部以覆盖空腔。 第二振动膜包括第一振动膜和其它材料。 压电驱动单元（130）包括第一电极层（132），压电层（134）和第二电极层。 第一引线和第二引线与第一电极层和第二电极层连接。
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公开(公告)号：KR1020110033593A
公开(公告)日：2011-03-31
申请号：KR1020090091148
申请日：2009-09-25
Applicant: 삼성전자주식회사
CPC classification number: H04R31/00 , H04R17/00 , H04R2400/00
Abstract: PURPOSE: A piezoelectric micro speaker with a weight attached to a vibration membrane and a method of manufacturing the same are provided to attach a weight to a central part of a vibration membrane, thereby increasing the entire weight of the vibration membrane. CONSTITUTION: A substrate(210) has a cavity penetrated in a thickness direction. A diaphragm(220) is formed on the substrate to cover the cavity. The diaphragm comprises a vibration membrane formed on an area corresponding to the cavity. A piezoelectric driving unit(230) is formed on the vibration membrane to vibrate the vibration membrane. A weight(240) is arranged inside the cavity. The weight is attached to the central part of the vibration membrane. The weight has a pillar shape. The center of gravity of the weight is located on the central line of the cavity.
Abstract translation: 目的：提供具有附着在振动膜上的重量的压电微型扬声器及其制造方法，以将重量附着在振动膜的中心部分，从而增加振动膜的整体重量。 构成：衬底（210）具有沿厚度方向穿透的空腔。 在基板上形成隔膜（220）以覆盖空腔。 隔膜包括形成在与腔相对应的区域上的振动膜。 在振动膜上形成压电驱动单元（230），振动膜振动。 重量（240）布置在空腔内。 重量附着在振动膜的中心部分。 重量有柱形。 重心的重心位于腔的中心线上。
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公开(公告)号：KR1020100069496A
公开(公告)日：2010-06-24
申请号：KR1020080128189
申请日：2008-12-16
Applicant: 삼성전자주식회사
IPC: H04R17/00
CPC classification number: H04R17/00 , G10K9/122 , H01L41/083 , H04R2217/01
Abstract: PURPOSE: A piezoelectric micro speaker and a manufacturing method thereof are provided to get a uniform thickness of a membrane by forming a diaphragm thin film into a uniform thickness. CONSTITUTION: A diaphragm thin film(110) is formed in the lower surface of a piezoelectric element(120). The diaphragm thin film is vibrated with the driving operation of the piezoelectric element. The diaphragm thin film generates a sound through the vibrations. The diaphragm thin film is supported with a substrate(100). The substrate comprises a bottom material layer(101), an etch stop layer(102), and a top material layer(103) which are sequentially formed. The substrate supports the edge of the vibrator of the diaphragm thin film. The etch stop layer is formed into a material which has the etch selectivity about the bottom and top material layer.
Abstract translation: 目的：提供压电微型扬声器及其制造方法，以通过将膜片薄膜形成为均匀的厚度来获得均匀的膜厚度。 构成：在压电元件（120）的下表面形成有隔膜薄膜（110）。 膜片薄膜随压电元件的驱动动作而振动。 隔膜薄膜通过振动产生声音。 膜片薄膜由衬底（100）支撑。 衬底包括依次形成的底部材料层（101），蚀刻停止层（102）和顶部材料层（103）。 基板支撑隔膜薄膜振动器的边缘。 蚀刻停止层形成为具有围绕底部和顶部材料层的蚀刻选择性的材料。
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Patent Agency Ranking
公开(公告)号：KR100790878B1
公开(公告)日：2008-01-03
申请号：KR1020060053141
申请日：2006-06-13
Applicant: 삼성전자주식회사
CPC classification number: B81C1/00166 , B81B2201/033 , B81B2201/042 , G02B26/0841
Abstract: 본 발명에 의하면, 상하 구조가 디커플된 콤전극의 자기정렬 식각 방법이 개시된다. 상기 식각 방법은 SOI 기판의 제1 실리콘층으로 구성된 상부 콤전극과 제2 실리콘층으로 구성된 하부 콤전극을 형성하는 콤전극의 식각 방법으로, 제1 실리콘층의 상부 콤전극이 형성될 위치에 제1 메탈 마스크를 형성하는 단계, 제1 실리콘층의 제1 메탈 마스크 및 하부 콤전극에 대응되는 위치에 제1 PR 마스크를 형성하는 단계, 제1 PR 마스크를 식각 방지막으로 하여 제1 실리콘층을 선택적으로 식각하는 단계, 제1 PR 마스크를 식각 방지막으로 하여 기판의 절연층을 선택적으로 식각하는 단계, 제1 PR 마스크를 식각 방지막으로 하여 제2 실리콘층을 선택적으로 식각하는 단계, 제2 실리콘층의 상부 콤전극에 대응되는 위치에 제2 PR 마스크를 형성하는 단계, 제2 실리콘층 하방으로 노출된 전체 표면에 대해 제2 메탈 마스크를 형성하는 단계, 제1, 제2 PR 마스크를 제거하는 단계 및 잔존하는 제1, 제2 메탈 마스크를 식각 방지막으로 하여, 각각 제1 실리콘층 및 제2 실리콘층을 식각함으로써 상부 콤전극 및 하부 콤전극을 형성하는 단계를 포함한다.
본 발명에 의하면, SOI 기판의 상부 실리콘 또는 하부 실리콘의 단일층으로 구성된 상하부 콤전극을 형성함에 있어, 상하부 콤전극 사이의 정밀한 얼라인이 이루어질 수 있는 자기정렬 식각 방법이 제공된다.-
公开(公告)号：KR100461002B1
公开(公告)日：2004-12-09
申请号：KR1020020063608
申请日：2002-10-17
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.
Abstract translation: 在MEMS封装工艺中用于底切的金属布线方法包括：将MEMS元件设置在硅衬底上，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于 连接金属布线，在该孔中沉积用于金属布线的薄金属膜，以及离子铣削沉积的薄金属膜。 通过离子铣削，该方法能够将金属布线连接到具有底切的通孔。 ＆lt;图像＆GT;
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公开(公告)号：KR100444588B1
公开(公告)日：2004-08-16
申请号：KR1020020070121
申请日：2002-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/84
CPC classification number: B81C1/00087 , H01L21/486 , H01L23/13 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a via hole through a glass wafer includes depositing a material layer (110) on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer (200), forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole (130), eliminating any remaining patterning material (120) used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole (130) is etched to form a via hole (130') having a smooth surface and extending through the glass wafer, and eliminating the material layer (110). The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
Abstract translation: 一种通过玻璃晶片形成通孔的方法包括：在玻璃晶片的外表面上沉积材料层（110），材料层的选择比高于玻璃晶片（200）的选择比; 在所述材料层的一侧上形成图案化部分，执行第一蚀刻，其中蚀刻所述通孔图案部分以形成初步通孔（130），从而消除用于形成所述通孔图案的任何剩余图案形成材料（120） 执行第二蚀刻，其中蚀刻预备通孔（130）以形成具有平滑表面且延伸穿过玻璃晶片的通孔（130'），并且去除材料层（110）。 根据本发明的方法能够形成穿过玻璃晶片的通孔，而不会形成底切或微小裂纹，从而增加MEMS元件的产量和可靠性。 ＆lt;图像＆GT;
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公开(公告)号：KR1020040040836A
公开(公告)日：2004-05-13
申请号：KR1020020069149
申请日：2002-11-08
Applicant: 삼성전자주식회사
IPC: H01L21/52
CPC classification number: B81C1/00285
Abstract: PURPOSE: A method and device for mounting vacuum of MEMS(micro electro mechanical system) at wafer level are provided to be capable of exactly controlling the degree of vacuum to an aiming extent and conserving initial vacuum degree in spite of the elapse of time. CONSTITUTION: A getter is attached to a cavity, wherein the cavity is formed at a cover(S310). The cover is aligned with a semiconductor substrate, wherein the semiconductor substrate is loaded in a vacuum chamber(S320). Inert gas is flowed into the vacuum chamber according to the set degree of vacuum(S330). The cover is attached to the semiconductor substrate(S340). Preferably, the getter is made of titanium. Preferably, the attaching process between the cover and the semiconductor substrate is performed, after predetermined time is passed from the inert gas inflow process.
Abstract translation: 目的：提供一种用于在晶圆级安装MEMS（微机电系统）真空的方法和装置，以便能够精确地控制目标程度的真空度，并尽可能保持初始真空度。 构成：将吸气剂附接到空腔，其中空腔形成在盖子上（S310）。 盖与半导体基板对准，其中将半导体基板装载在真空室中（S320）。 惰性气体根据设定的真空度流入真空室（S330）。 盖子连接到半导体衬底（S340）。 优选地，吸气剂由钛制成。 优选地，在从惰性气体流入过程经过预定时间之后，执行盖和半导体衬底之间的附着过程。
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公开(公告)号：KR1020040034949A
公开(公告)日：2004-04-29
申请号：KR1020020063608
申请日：2002-10-17
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A metal line method is provided to connect the metal line to the via hole having the undercut by using an ion milling unit. CONSTITUTION: A MEMS(Micro-Electronic Mechanical System) device(23) is installed on an upper surface of a silicon substrate(22). A glass wafer is adhered to an upper surface of the silicon substrate(22) having the MEMS device(23). In a MEMS packaging process for adhering the glass to the silicon substrate, a metal layer is deposited on a hole(26) of the glass wafer(24). The deposited layer is redeposited by performing an ion milling process.
Abstract translation: 目的：提供金属线方法，通过使用离子铣削单元将金属线连接到具有底切的通孔。 构成：在硅衬底（22）的上表面上安装有MEMS（微电子机械系统）装置（23）。 玻璃晶片粘附到具有MEMS器件（23）的硅衬底（22）的上表面上。 在用于将玻璃粘合到硅衬底的MEMS封装工艺中，金属层沉积在玻璃晶片（24）的孔（26）上。 沉积层通过进行离子研磨工艺再沉积。
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