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公开(公告)号：KR1020150047361A
公开(公告)日：2015-05-04
申请号：KR1020130127349
申请日：2013-10-24
Applicant: 제일모직주식회사
CPC classification number: C08G77/08 , C08G77/12 , C08G77/14 , C08G77/20 , C08K5/56 , C08L83/00 , C08L83/06 , H01L51/5256 , C08L83/04
Abstract: 본발명은 (A) 불포화기함유오르가노폴리실록산, (B) 화학식 1의불포화기및 에폭시기함유오르가노폴리실록산, (C) Si-H기함유오르가노실리콘화합물, 및 (D) 화학식 15의백금촉매를포함하는유기발광소자봉지용조성물, 및이를사용하여제조된유기발광소자표시장치에관한것이다.
Abstract translation: 本发明涉及一种OLED装置的封装用组合物及使用其的OLED显示装置，该组合物包含：（A）含有不饱和基团的有机聚硅氧烷，（B）含有不饱和基团和环氧基的有机聚硅氧烷 化学式1，（C）含有Si-H基的有机聚硅氧烷化合物和（D）化学式15中的铂催化剂。
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公开(公告)号：KR1020150001581A
公开(公告)日：2015-01-06
申请号：KR1020130157550
申请日：2013-12-17
Applicant: 제일모직주식회사
IPC: C08G77/26 , C08G77/442 , C08L83/08 , C08F30/08 , H01L23/29
CPC classification number: C08G77/26 , C08F30/08 , C08F230/08 , C08G77/442 , C08L83/08 , H01L23/29 , H01L23/296 , H01L33/56
Abstract: 본 발명은 화학식 1로 표시되는 (A)시아노기 함유 실리콘계 광경화 모노머 및 (B)개시제를 포함하는 광경화 조성물 및 이를 포함하는 봉지화된 장치에 관한 것이다.
Abstract translation: 本发明涉及包含由化学式1表示的含氰基的硅基光固化性单体（A）和引发剂（B）的光固化性组合物以及包含其的包封装置。 本发明的目的是提供一种具有高光固化性的光固化性组合物，并且凸轮实施阻挡层，以将固化后的无机阻挡层具有高粘合力的装置的部件密封，并具有良好的可靠性。 此外，提供了包括该装置的封装装置。
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公开(公告)号：KR1020140080359A
公开(公告)日：2014-06-30
申请号：KR1020120150061
申请日：2012-12-20
Applicant: 제일모직주식회사
IPC: C08F283/12 , C08F299/08 , C08L51/06 , H01L23/29
CPC classification number: C08F283/12 , C07C69/14 , C08F299/08 , C08L51/06 , H01L23/29
Abstract: The present invention relates to a photo curable composition comprising (A) a photo curable monomer and (B) a monomer comprising silicone of the following chemical formula 1, a barrier layer comprising the same, and an encapsulated device comprising the same. The present invention can form a high organic barrier layer having a significantly low water vapor permeability and out gas generation amount and a high attachment to an inorganic barrier layer, and can form an organic barrier layer having a high photo curable ratio, so that not generating a shift after cured.
Abstract translation: 本发明涉及一种光固化性组合物，其包含（A）光固化性单体和（B）包含以下化学式1的硅氧烷的单体，含有该化合物的硅的单体，以及包含其的包封装置。 本发明可以形成具有显着低的水蒸汽渗透性和气体产生量以及与无机阻挡层的高附着性的高有机阻挡层，并且可以形成具有高光固化比的有机阻挡层，使得不产生 治愈后转移。
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公开(公告)号：KR1020140004905A
公开(公告)日：2014-01-14
申请号：KR1020120072227
申请日：2012-07-03
Applicant: 제일모직주식회사
Abstract: The present invention relates to a photocurable composition, a protective layer composed of the present composition, and an optical member including the present protective layer. More specifically, the invention relates to a silicon compound having halogen and a (meth)acrylate group, a photocurable composition including a photo polymerization initiator, a protective layer composed of the present composition, and an optical member including the protective layer.
Abstract translation: 本发明涉及光固化性组合物，由本发明组合物构成的保护层和包含本保护层的光学构件。 更具体地，本发明涉及具有卤素和（甲基）丙烯酸酯基团的硅化合物，包含光聚合引发剂的光固化组合物，由本发明组合物组成的保护层和包含该保护层的光学部件。
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35.发明授权반도체 디바이스의 미세 갭 필용 화합물, 이를 포함하는 조성물 및 반도체 캐패시터의 제조방법 有权用于在半导体器件中填充小GAPS的化合物，包含该化合物的组合物和用于制造半导体电容器的方法
公开(公告)号：KR101233385B1
公开(公告)日：2013-02-15
申请号：KR1020117003554
申请日：2008-12-31
Applicant: 제일모직주식회사
CPC classification number: C08G77/04 , Y10T428/31663
Abstract: 반도체 캐패시터(capacitor) 제조용 노드분리 공정에 사용될 수 있는 화합물 및 이를 포함하는 반도체 미세 갭필용 조성물이 개시된다.
상기 반도체 미세 갭필용 조성물은 보관일수에 따라 분자량이 크게 변하지 않을 뿐만 아니라, 알칼리를 띄는 현상액에 원하는 현상속도(DR; dissolution rate)로 녹아 나오는 동시에, 보관일수에 따라 그 현상속도가 크게 변하지 않는 보관안정성이 우수하다.-
Patent Agency Ranking36.发明公开미세 갭필용 중합체, 이를 포함하는 미세 갭필용 조성물, 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 无效用于气隙填充的聚合物，包括其的组合物，使用该组合物生产集成电路装置的方法
公开(公告)号：KR1020110074253A
公开(公告)日：2011-06-30
申请号：KR1020090131165
申请日：2009-12-24
Applicant: 제일모직주식회사
IPC: C08G77/04 , C08L83/04 , H01L21/469 , H01L21/76
CPC classification number: C07F7/0852 , H01L21/76877
Abstract: PURPOSE: A gap-filling composition is provided to prevent change of developing rate and molecular weight and to completely fill a hole having 70 nm or less of diameter. CONSTITUTION: A gap-filling polymer has a substituent which is induced from a compound of chemical formula 1(HOOC-(CH_2)_l-R^1_2Si-O-SiR^1'_2-(CH_2)_l-COOH). In chemical formula 1, R^1 and R^1' are identically or differently alkyl group of 1-12 carbon atoms or substituted or non-substituted aryl group of 6-20 carbon atoms; and I is individually 0 or integer of 1-10.
Abstract translation: 目的：提供间隙填充组合物以防止显影速率和分子量的变化，并且完全填充具有70nm或更小直径的孔。 构成：间隙填充聚合物具有由化学式1的化合物（HOOC-（CH 2）1-R 1）2 Si-O-SiR 1'2 - （CH 2）1 -COOH）诱导的取代基。 在化学式1中，R 1和R 9'与1-12个碳原子相同或不同的烷基或6-20个碳原子的取代或未取代的芳基; 我个人为0或1-10的整数。
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公开(公告)号：KR1020110043994A
公开(公告)日：2011-04-28
申请号：KR1020090100776
申请日：2009-10-22
Applicant: 제일모직주식회사
IPC: H01L21/108 , H01L21/8242
CPC classification number: C08G77/18 , C08G77/16 , H01L21/324 , H01L21/565 , H01L28/40
Abstract: PURPOSE: A filler for a semiconductor capacitor and method for manufacturing a semiconductor capacitor using the same are provided to convert a silicon based compound with a t-butyloxycarbonyl group into a carboxyl group by a heating process, thereby increasing development performance. CONSTITUTION: A conductive layer is formed on the semiconductor substrate(1). A filling layer is formed by coating the conductive layer with filler. A part of the conductive layer is eliminated to form a first electrode(5a). A dielectric layer(9) is formed on the first electrode. A second electrode(11) is formed on the dielectric layer.
Abstract translation: 目的：提供一种半导体电容器用填充材料及使用该填充材料的半导体电容器的制造方法，其通过加热工序将具有叔丁氧羰基的硅系化合物转化成羧基，从而提高显影性能。 构成：在半导体衬底（1）上形成导电层。 通过用填料涂覆导电层形成填充层。 消除导电层的一部分以形成第一电极（5a）。 在第一电极上形成介电层（9）。 在电介质层上形成第二电极（11）。
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公开(公告)号：KR1020100073676A
公开(公告)日：2010-07-01
申请号：KR1020080132405
申请日：2008-12-23
Applicant: 제일모직주식회사
IPC: G03F7/11
CPC classification number: G03F7/0045 , C09D7/65 , G03F7/11 , H01L27/14627 , H01L27/14685 , H01L27/14687
Abstract: PURPOSE: A resin composition for over-coating, an over-coating film manufactured thereby, and an image sensor including thereof are provided to improve the surface roughness of the over-coating film after etching, and to secure the adhesive strength, the transparency, and the heat resistance. CONSTITUTION: A resin composition for over-coating contains a polysiloxane resin produced from a silane compound including a double bond functional group through the hydrolysis and the condensation polymerization. The silane compound is marked with chemical formula 1. In the chemical formula 1, R1 and R3 are a substituted or non-substituted alkoxy group, respectively. R2 refers to the substituted or non-substituted alkoxy group, or halogen. R and R` are hydrogen or a substituted or non-substituted alkyl group, respectively. N is an integer of 1~10.
Abstract translation: 目的：提供一种用于过涂覆的树脂组合物，由其制造的过涂膜及其图像传感器，以改善蚀刻后的外涂膜的表面粗糙度，并且确保粘合强度，透明度， 和耐热性。 构成：用于过涂覆的树脂组合物含有通过水解和缩聚而由包含双键官能团的硅烷化合物制备的聚硅氧烷树脂。 硅烷化合物用化学式1表示。在化学式1中，R 1和R 3分别是取代或未取代的烷氧基。 R2是指取代或未取代的烷氧基或卤素。 R和R'分别是氢或取代或未取代的烷基。 N为1〜10的整数。
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39.发明公开
公开(公告)号：KR1020090025664A
公开(公告)日：2009-03-11
申请号：KR1020070090677
申请日：2007-09-06
Applicant: 제일모직주식회사
Abstract: An organosilane polymer for micro gap fill of a semiconductor device is provided to remove it from the inside of hole easily by processing it with hydrofluoric acid solution, after curing. An organosilane polymer for micro gap fill of a semiconductor device comprises (1) a compound indicated as the following chemical formula 1: [RO]3Si-[CH2]n-Si[OR]3, (2) a compound indicated as the following chemical formula 2: [RO]3Si-[CH2]nX and (3) a condensation polymer of hydrolysates generated from at lease one selected from a compound indicated as the following chemical formula 3: [RO]3Si-CH3 and a compound indicated as the following chemical formula 4: [RO]3Si-H.
Abstract translation: 提供用于半导体器件的微隙填充的有机硅烷聚合物，其在固化后通过用氢氟酸溶液处理而容易地从孔的内部除去。 用于半导体器件的微间隙填充的有机硅烷聚合物包括（1）以下化学式1表示的化合物：[RO] 3Si- [CH 2] n -Si [OR] 3，（2）如下所示的化合物 化学式2：[RO] 3Si- [CH 2] n X和（3）由至少一种选自以下化学式3表示的化合物产生的水解产物的缩合聚合物：[RO] 3 Si-CH 3和表示为 以下化学式4：[RO] 3Si-H。
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公开(公告)号：KR1020080058836A
公开(公告)日：2008-06-26
申请号：KR1020060132976
申请日：2006-12-22
Applicant: 제일모직주식회사
Abstract: A polymer for node separation in fabricating a semiconductor device is provided to enable complete gap-fill without generating air voids, to realize a desired solubility to an alkali developer and etching resistance, and to allow easy removal from holes by way of ashing treatment. A polymer for node separation comprises repeating units represented by the following formula 1, formula 2 or formula 3. In formula 1, Ra represents a hydrogen atom or methyl group. The polymer for node separation is selected from a homopolymer of the repeating units represented by formula 1, formula 2 or formula 3, a copolymer thereof, a copolymer of thereof with styrene or benzyl methacrylate, and a blend thereof.
Abstract translation: 提供了用于在制造半导体器件中用于节点分离的聚合物，以实现完全间隙填充而不产生空气空隙，以实现对碱性显影剂的期望的溶解度和耐蚀刻性，并且允许通过灰化处理容易地从孔中移除。 用于节点分离的聚合物包括由下式1，式2或式3表示的重复单元。在式1中，R a表示氢原子或甲基。 用于节点分离的聚合物选自由式1，式2或式3表示的重复单元的均聚物，其共聚物，其与苯乙烯或甲基丙烯酸苄酯的共聚物及其共混物。
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