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公开(公告)号：KR1020090005972A
公开(公告)日：2009-01-14
申请号：KR1020080063424
申请日：2008-07-01
Applicant: 한국과학기술원
Abstract: A manufacturing method of binary alloy nanostructure is provided to have a simple process and reproducibility and to mass-produce a binary alloy nanowire or a nano belt of a uniform-size which is not cohered on a mono crystal substrate. A manufacturing method of binary alloy nanostructure comprises steps of: using two materials selected from a first material to a third material, a mixture of the two materials selected from the first material to the third material or a third material as precursor; heat-treating a mono crystal substrate of a semiconductor or a non-conductor positioned at a back-end of a furnace and the precursor positioned at a front-end of the furnace at a state that inert gas flows; forming a binary alloy monocrystal nanowire or a nano belt on the mono crystal substrate. The first material includes metal oxide, metal material or metal halide of one metal comprising binary alloy of the binary alloy nanostructure which is a binary alloy nanowire or a binary alloy nano belt. The second material includes metal oxide, metal material or metal halide of the other metal comprising the binary alloy. The third material includes the binary alloy material of the binary alloy.
Abstract translation: 提供二元合金纳米结构的制造方法具有简单的工艺和再现性，并且批量生产未结合在单晶衬底上的均匀尺寸的二元合金纳米线或纳米带。 二元合金纳米结构的制造方法包括以下步骤：使用选自第一材料至第三材料的两种材料，选自第一材料至第三材料的两种材料或第三材料作为前体的混合物; 在惰性气体流动的状态下，对位于炉后端的半导体或非导体的单晶衬底进行热处理，所述前体位于炉的前端; 在单晶衬底上形成二元合金单晶纳米线或纳米带。 第一种材料包括金属氧化物，金属材料或一种金属的金属卤化物，其包括二元合金纳米结构二元合金纳米线或二元合金纳米带的二元合金。 第二种材料包括金属氧化物，金属材料或包含二元合金的其它金属的金属卤化物。 第三种材料包括二元合金的二元合金材料。
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公开(公告)号：KR1020090001004A
公开(公告)日：2009-01-08
申请号：KR1020070065030
申请日：2007-06-29
Applicant: 한국과학기술원
Inventor： 김봉수
CPC classification number: B22F5/12 , B22F2301/25 , B22F2304/054 , B82Y30/00 , B82Y40/00
Abstract: A method for manufacturing noble metal monocrystal nano wire on a mono crystal substrate is provided to have simple process and reproducibility by manufacturing the noble metal nanowire using a vapor phase transport method which does not use catalyst. A method for manufacturing noble metal monocrystal nano wire on a mono crystal substrate comprise a step of heat-treating a semiconductor or a non-conductor mono crystal substrate positioned at a back-end of a furnace and a precursor including the noble metal oxide positioned at the front-end of furnace, a precious metal material or the halogenation noble metal at a stat of inert gas flow and a pressure of 2-50 torr.
Abstract translation: 提供了在单晶基板上制造贵金属单晶纳米线的方法，通过使用不使用催化剂的气相输送法制造贵金属纳米线，具有简单的工艺和再现性。 在单晶衬底上制造贵金属单晶纳米线的方法包括对位于炉后端的半导体或非导体单晶衬底进行热处理的步骤，以及将位于 炉前端，贵金属材料或惰性气体流量和2-50乇压力下的卤化贵金属。
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公开(公告)号：KR101793008B1
公开(公告)日：2017-11-03
申请号：KR1020140106760
申请日：2014-08-18
Applicant: 한국과학기술원
IPC: G01N33/566 , G01N33/68 , G01N21/65
Abstract: 생화학물질진단플랫폼은금속나노플레이트, 금속나노플레이트의표면상에부착된바이오리셉터, 바이오리셉터에의해포획된바이오마커, 바이오마커를캡핑하는금속나노입자, 및포획된바이오마커를분석하기위한분광검출부를포함한다. 바이오마커를샌드위치시켜고정함으로써고민감도로생화학물질을검출할수 있다.
Abstract translation: 生化诊断平台光谱检测器来分析生物受体，生物受体通过盖住以生物标记物的金属纳米颗粒中捕获的生物标志物，以及附着在金属纳米板的表面上，金属纳米板所捕获的生物标志物 它包括。 通过夹心和固定生物标志物可以高灵敏度检测生物标志物。
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公开(公告)号：KR1020140122590A
公开(公告)日：2014-10-20
申请号：KR1020130039476
申请日：2013-04-10
Applicant: 한국과학기술원
Abstract: 본 발명은 하기 화학식 A로 표시되는 금속 게르마늄 규화물 단결정 나노선 및 이의 제조방법을 제공한다.
[화학식 A]
(Nb
1-m V
m )
10 (Si
x Ge
1-x )
7
여기서 m은 0.01 내지 0.2의 범위를 갖는 실수이고, X는 0.1 내지 0.5 의 범위를 갖는 실수이다.Abstract translation: 本发明提供由化学式A（Nb1-mVm）10（SixGe1-x）表示的多组分单晶金属锗硅化物纳米线及其制造方法。 化学式A中，m为0.01〜0.2的实数，X为0.1〜0.5的实数。
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公开(公告)号：KR1020140107809A
公开(公告)日：2014-09-05
申请号：KR1020130021833
申请日：2013-02-28
Applicant: 한국과학기술원
IPC: A61B5/0478 , A61B5/0484
Abstract: The present invention relates to a neural electrode for measuring a neural signal which includes a single-crystalline Au nanowire which is inserted into a neural cell or a tissue including a neural cell to receive an electrical signal from the neural cell or the tissue including a neural cell; and a metal tip which supports by the Au nanowire to be fixed, transfers the electrical signal to the outside, and is coated with an insulator which prevents the exposure of surface. The neural electrode can be miniaturized to have good mechanical properties, high electric conductivity and spatial resolution.
Abstract translation: 本发明涉及一种用于测量神经信号的神经电极，其包括插入神经细胞的单晶Au纳米线或包含神经细胞的组织以从神经细胞或包含神经元的组织接收电信号 细胞; 以及由Au纳米线支撑固定的金属尖端，将电信号传递到外部，并且涂覆有防止表面暴露的绝缘体。 神经电极可以小型化以具有良好的机械性能，高导电性和空间分辨率。
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Patent Agency Ranking
公开(公告)号：KR101382258B1
公开(公告)日：2014-04-10
申请号：KR1020130013362
申请日：2013-02-06
Applicant: 한국과학기술원
Abstract: The present invention relates to an optical nanoantenna including a single-crystalline Ag nanoplate. The optical nanoantenna comprises: a receiver disposed at one side end of the Ag nanoplate and receiving incident light; and a transmitter disposed at the other side end thereof and transmitting surface plasmon-polariton (SPP) waves propagated along the surface of the Ag nanoplate; which are separately disposed, wherein the SPP waves induced by the incident light received from the receiver along the surface thereof is propagated to be transmitted to the transmitter.
Abstract translation: 本发明涉及一种包括单晶Ag纳米板的光学纳米天线。 光学纳米天线包括：接收器，设置在Ag纳米板的一侧端并接收入射光; 和位于其另一侧的发射器，并且传输沿着Ag纳米板表面传播的表面等离子体激元（SPP）波; 其中分离地设置由从接收器沿其表面接收的入射光引起的SPP波被传送到发送器。
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公开(公告)号：KR101358989B1
公开(公告)日：2014-02-11
申请号：KR1020120039310
申请日：2012-04-16
Applicant: 한국과학기술원
Abstract: 본 발명은 기판 상에 단결정의 전이금속 나노선 또는 전이금속 나노판을 형성하는 단계; 금속 팁의 단부에 전도성 접착제를 부착하는 단계; 상기 전도성 접착제가 부착된 금속 팁의 단부를 기판상에 형성된 전이금속 나노선의 상단부 또는 전이금속 나노판의 단부와 접촉함으로써, 전이금속 나노선 또는 전이금속 나노판을 기판으로부터 분리하여 상기 금속 팁에 부착시키는 단계; 및 상기 전이금속 나노선 또는 전이금속 나노판이 결합된 금속 팁의 금속 표면이 노출되지 않도록 절연체로 코팅하는 단계;를 포함하는, 전이금속 나노 전극의 제조 방법 및 이에 의해 제조되는 전이금속 나노 전극에 관한 것이다.
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公开(公告)号：KR1020130116695A
公开(公告)日：2013-10-24
申请号：KR1020120039310
申请日：2012-04-16
Applicant: 한국과학기술원
CPC classification number: B82B3/009 , G01Q60/60 , Y10S977/849
Abstract: PURPOSE: A manufacturing method for a transition metal nanoelectrode is provided to grow a transition metal nanowire or a transition metal nanosheet without surfactant or catalyst, thereby producing the transition metal nanoelectrode having a clean surface and perfect crystalline property. CONSTITUTION: A manufacturing method of a transition metal nanoelectrode comprises following steps. A transition metal nanowire of monocrystal or a transition metal nanosheet of monocrystal is formed on a substrate. A conductive adhesive is adhered to the end of a metal tip. The transition metal nanowire or the transition metal nanosheet is separated from the substrate and attached to the metal tip by contacting the end of the metal tip in which the conductive adhesive is attached with the top end of the transition metal nanowire or the end of the transition metal nanosheet. And the metal tip in which the transition metal nanowire or the transition metal nanosheet is adhered is coated with an insulator.
Abstract translation: 目的：提供过渡金属纳米电极的制造方法，以生长过渡金属纳米线或不含表面活性剂或催化剂的过渡金属纳米片，从而制备具有干净表面和完美结晶性能的过渡金属纳米电极。 构成：过渡金属纳米电极的制造方法包括以下步骤。 在基板上形成单晶的过渡金属纳米线或单晶的过渡金属纳米片。 导电粘合剂粘附到金属尖端的端部。 将过渡金属纳米线或过渡金属纳米片与基底分离，并通过使与导电粘合剂相连接的金属末端的端部与过渡金属纳米线的顶端或过渡末端相接触而连接到金属末端 金属纳米片。 并且用绝缘体涂覆过渡金属纳米线或过渡金属纳米片所附着的金属尖端。
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公开(公告)号：KR1020130090619A
公开(公告)日：2013-08-14
申请号：KR1020120011879
申请日：2012-02-06
Applicant: 한국과학기술원
CPC classification number: B22F1/0025 , B82Y30/00 , C30B25/105 , C30B29/406
Abstract: PURPOSE: A manufacturing method of a gold and silver alloy nanowire is provided to manufacture the nanowire which has plasmon property of the surface and high chemical stability by forming the nanowire which has the gold and the silver alloy structure through the vapor phase growth. CONSTITUTION: A manufacturing method of a gold and silver alloy nanowire comprises the following steps. A gold nanowire is formed on a substrate. A silver vapor is supplied on the gold nanowire. The step of forming a gold nanowire comprises a step of performing an epitaxial growth of the gold nanowire by supplying a gold vapor on the substrate. The substrate is the STO (110) substrate. The gold vapor is supplied as 100-250 sccm of flow rate on the substrate, and the gold nanowire grows to the perpendicular direction about the substrate. The silver vapor is heated to 650-850°C and supplied on the gold nanowire. The manufacturing method of the gold and silver alloy nanowire further includes the following step. The composition of the gold and the silver of the gold and silver alloy nanowire are controlled by adjusting the supplying time of the silver vapor.
Abstract translation: 目的：提供金银合金纳米线的制造方法，通过气相生长形成具有金和银合金结构的纳米线，制造具有表面等离子体性质和高化学稳定性的纳米线。 构成：金银合金纳米线的制造方法包括以下步骤。 在基板上形成金纳米线。 在金纳米线上提供银蒸气。 形成金纳米线的步骤包括通过在基底上供应金蒸气来进行金纳米线的外延生长的步骤。 衬底是STO（110）衬底。 金蒸汽在基板上以100-250sccm的流速供应，并且金纳米线沿着垂直于基底的方向生长。 将银蒸气加热至650-850℃并在金纳米线上供应。 金银合金纳米线的制造方法还包括以下步骤。 通过调节银蒸气的供应时间来控制金和银合金纳米线的金和银的组成。
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公开(公告)号：KR101251344B1
公开(公告)日：2013-04-05
申请号：KR1020110076965
申请日：2011-08-02
Applicant: 한국과학기술원
Abstract: 본 발명은 마스터 몰드에 의해 음각이나 양각의 단일 패턴 또는 다단 패턴(Multi-Level)이 형성된 고분자 화합물 필러(Pillar) 구조체를 이용한 3차원 전극 및 그 제조방법에 관한 것으로, 패턴이 형성된 마스터 몰드를 준비하는 단계, 패턴이 형성된 마스터 몰드에 고분자 화합물 레진을 도포하는 단계, 고분자 화합물 레진의 상부에 고분자 화합물로 이루어진, 후면 지지 필름(Back Supporting Film)을 부착하는 단계, 고분자 화합물 레진을 경화하는 단계, 경화된 고분자 화합물 레진을 마스터 몰드에서 분리하여 패턴이 형성된 고분자 화합물 필러(Pillar) 구조체를 취득하는 단계 및 고분자 화합물 필러(Pillar) 구조체의 표면에 전도성 폴리머를 증착하여 고분자 화합물 필러(Pillar) 구조의 3차원 전극을 형성하는 단계를 포함한다.
나아가, 본 발명에 따른 고분자 화합물 필러 구조체를 이용한 3차원 전극은 고분자 화합물로 이루어진, 후면 지지 필름(Back Supporting Film), 후면 지지 필름의 상부에 음각 또는 양각의 패턴(Pattern)이 형성된 고분자 화합물 필러(Pillar) 구조체 및 고분자 화합물 필러(Pillar) 구조체 표면에 형성된 전도성 폴리머층을 포함한다.
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