公开(公告)号：KR1020140076111A

公开(公告)日：2014-06-20

申请号：KR1020120144276

申请日：2012-12-12

Applicant: 한국전자통신연구원

Inventor： 이수재 ,  황치선 ,  추혜용 ,  임상철 ,  피재은 ,  유민기

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/0665

Abstract: A transistor according to an embodiment of the present invention may include an oxide semiconductor layer with a nano-layered structure. The oxide semiconductor layer may include at least one first nano-layer and at least on second nano-layer. The first nano-layer and the second nano-layer are alternately stacked. A channel with higher electron mobility at the interface between the first nano-layer and the second nano-layer as the first nano-layer and the second nano-layer contain different materials. The transistor of the present invention may have high reliability.

Abstract translation: 根据本发明实施例的晶体管可以包括具有纳米层状结构的氧化物半导体层。 氧化物半导体层可以包括至少一个第一纳米层和至少第二纳米层。 第一纳米层和第二纳米层交替堆叠。 在第一纳米层和第二纳米层之间的界面处作为第一纳米层和第二纳米层含有不同材料的具有较高电子迁移率的通道。 本发明的晶体管可以具有高的可靠性。

公开(公告)号：KR1020140038141A

公开(公告)日：2014-03-28

申请号：KR1020120104493

申请日：2012-09-20

Applicant: 한국전자통신연구원

Inventor： 양용석 ,  유인규 ,  김민석 ,  정순원 ,  나복순 ,  임상철

IPC: B41F17/14 ,  B41M3/00 ,  H05K3/46

CPC classification number: H05K1/02 ,  H01L51/0022 ,  H01L51/003 ,  H01L51/102 ,  H01L51/441 ,  H01L51/5203 ,  H05K1/0393 ,  H05K3/0058 ,  H05K3/207 ,  H05K2201/0376

Abstract: The present invention relates to a manufacturing method for an embedded printed electronic device where a printing layer is embedded in a substrate. The purpose of the present invention is to provide the manufacturing method for a printed electronic device where a printing layer is planarized by realizing a buried printed electronic device on a large area through a simple method by combining a printing process such as an inkjet printing method and a gravure printing method with a transfer process using lamination equipment, and, in particular, by removing defects due to great surface roughness and thickness of the printing layer of a printed electronic device; and is also to provide a planarized printed electronic device manufactured by the same. [Reference numerals] (AA) Start; (BB) Prepare a substrate; (CC) Manufacture a buried conductive film; (DD) End; (S102) Process the surface of the substrate; (S103) Form a conductive layer with a printing method; (S104) Form an organic buried layer; (S105) Lamination process; (S106) Transfer the organic buried layer and the conductive layer using a delamination process; (S107) Prepare a substrate for lamination; (S108) Coat an adhesion layer

Abstract translation: 本发明涉及一种嵌入式印刷电子装置的制造方法，其中印刷层嵌入基板中。 本发明的目的是提供一种印刷电子装置的制造方法，其中通过简单的方法，通过将诸如喷墨印刷方法的印刷方法和 具有使用层压设​​备的转印工艺的凹版印刷方法，特别是通过去除印刷电子器件的印刷层的表面粗糙度和厚度的缺陷; 并且还提供由其制造的平面化印刷电子装置。 （附图标记）（AA）开始; （BB）准备底物; （CC）制造埋地导电膜; （DD）结束; （S102）处理基板的表面; （S103）用印刷法形成导电层; （S104）形成有机埋层; （S105）层压工艺; （S106）使用分层工序转移有机掩埋层和导电层; （S107）准备层压用基板; （S108）涂覆粘合层

公开(公告)号：KR1020130067615A

公开(公告)日：2013-06-25

申请号：KR1020110134355

申请日：2011-12-14

Applicant: 한국전자통신연구원

Inventor： 오지영 ,  임상철 ,  김철암

IPC: B82B3/00 ,  B82B1/00 ,  B82Y40/00

CPC classification number: B01J19/10 ,  B82Y30/00 ,  B82Y40/00

Abstract: PURPOSE: A manufacturing method of metal oxide nanoparticles is provided to synthesize metal oxide nanoparticles with uniform sizes and superior dispersibility by mixing a basic chemical species solution with a gas-injected metal oxide pre-composition and supplying ultrasound waves to the mixture. CONSTITUTION: A manufacturing method of metal oxide nanoparticles includes the following steps: a metal oxide pre-composition solution is prepared; the composition solution is mixed with a basic chemical species solution to prepare a mixed solution; ultrasound waves are applied to the mixed solution to prepare a reactant; and a solvent is removed from the reactant. The manufacturing method of the metal oxide nanoparticles further includes a step for injecting gas into the composition solution. The composition solution includes metal acetate, metal alkoxide, metal nitrate, metal halide, and the hydrate or admixture of the same. The basic chemical species solution is the mixture of basic chemical species and an alcohol-based solution. The ultrasound waves have 30-100kHz of frequency and 600-3,000W of output.

Abstract translation: 目的：提供金属氧化物纳米颗粒的制造方法，通过将碱性化学物质溶液与气体注入的金属氧化物预组合物混合并向混合物提供超声波来合成具有均匀尺寸和优异分散性的金属氧化物纳米颗粒。 构成：金属氧化物纳米颗粒的制造方法包括以下步骤：制备金属氧化物预组合物溶液; 将组合物溶液与碱性化学物质溶液混合以制备混合溶液; 将超声波施加到混合溶液以制备反应物; 并从反应物中除去溶剂。 金属氧化物纳米粒子的制造方法还包括将气体注入组合物溶液的步骤。 组合物溶液包括金属乙酸盐，金属醇盐，金属硝酸盐，金属卤化物及其水合物或其混合物。 基本化学物质溶液是碱性化学物质和醇基溶液的混合物。 超声波具有30-100kHz的频率和600-3,000W的输出。

公开(公告)号：KR1020120103479A

公开(公告)日：2012-09-19

申请号：KR1020120023628

申请日：2012-03-07

Applicant: 한국전자통신연구원

Inventor： 오지영 ,  임상철

IPC: H01B3/00 ,  H01B17/62 ,  B05D5/00

CPC classification number: C09D129/02 ,  C08K3/105 ,  C08K3/30 ,  C08K2003/262 ,  C08K2003/3045 ,  C08L25/16 ,  C08L61/28 ,  C09D125/18 ,  H01B3/448 ,  C08K3/28

Abstract: PURPOSE: An organic and inorganic hybrid composition, an organic and inorganic hybrid insulating layer and a method of manufacture thereof are provided to prevent phase separation and to maintain uniformly dispersed state. CONSTITUTION: An organic and inorganic hybrid composition is a mixture of organic composition including poly-4-vinyl phenol and inorganic composition including sodium compound and aluminum compound. The organic and inorganic hybrid composition comprises 69-99.89 weight% of the poly -4- vinylphenol, 0.01-1 weight% of the sodium compound, 0.1-30 weight% of the aluminum compound based on the total weight thereof. The organic composition additionally includes a first solvent which dissolves the poly -4- vinylphenol. 50-95 wt% of the first solvent is included based on the total weight of the organic composition.

Abstract translation: 目的：提供有机和无机杂化组合物，有机和无机混合绝缘层及其制造方法，以防止相分离并保持均匀分散状态。 构成：有机和无机杂化组合物是包括聚-4-乙烯基苯酚和包括钠化合物和铝化合物的无机组合物的有机组合物的混合物。 有机和无机杂化组合物包含69-99.89重量％的聚-4-乙烯基苯酚，0.01-1重量％的钠化合物，0.1-30重量％的铝化合物占其总重量。 有机组合物另外包括溶解聚-4-乙烯基苯酚的第一溶剂。 基于有机组合物的总重量，包含50-95重量％的第一溶剂。

公开(公告)号：KR1020100068749A

公开(公告)日：2010-06-24

申请号：KR1020080127210

申请日：2008-12-15

Applicant: 한국전자통신연구원

Inventor： 임상철 ,  김성현 ,  양용석 ,  김진식 ,  윤두협

IPC: H01L29/786 ,  H01L51/05 ,  G01N33/53

CPC classification number: H01L51/0558 ,  G01N33/53

Abstract: PURPOSE: A manufacturing method of a transistor for a bio-sensor is provided to maximize a sensing effect by enhancing the electrical conductivity of the bio-sensor. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate insulating layer(120) is formed on the gate electrode. Source/drain electrodes(130a, 130b) are formed on the gate insulating layer. An organic semiconductor(140) is formed between the source/drain electrodes. A hydrophilic channel is formed by surface-processing the organic semiconductor.

Abstract translation: 目的：提供用于生物传感器的晶体管的制造方法，以通过增强生物传感器的导电性来最大化感测效果。 构成：在基板（100）上形成栅电极（110）。 栅极绝缘层（120）形成在栅电极上。 源极/漏极（130a，130b）形成在栅极绝缘层上。 在源极/漏极之间形成有机半导体（140）。 通过表面处理有机半导体形成亲水性通道。

公开(公告)号：KR1020100025834A

公开(公告)日：2010-03-10

申请号：KR1020080084551

申请日：2008-08-28

Applicant: 한국전자통신연구원

Inventor： 윤두협 ,  김성현 ,  엄용성 ,  송윤호 ,  이수재 ,  문종태 ,  임상철 ,  양용석 ,  김진식

IPC: F21V8/00 ,  A61L9/20 ,  F21Y101/02 ,  F21W131/305

CPC classification number: G02B6/001 ,  A61L2/10 ,  F21V2200/13 ,  F21W2131/305 ,  F21Y2115/10 ,  Y10S362/80

Abstract: PURPOSE: A lighting device is provided to implement a linear optical source by combining an LED with a side light emission optical fiber. CONSTITUTION: A lighting device includes an LED unit(200) and a side light emission optical fiber(100). The LED unit emits the blue light with a wavelength of 320 to 450 nm, the green light with the wavelength of 480 to 530 nm, the red light with the wavelength of 600 and 700 nm, and the white light. The side light emission optical fiber is formed by an electro-spinning method and is combined with the combination surface(200a) of the LED unit. The side light emission optical fiber is made of the polymer composite material.

Abstract translation: 目的：提供照明装置，通过将LED与侧光发射光纤组合来实现线性光源。 构成：照明装置包括LED单元（200）和侧光发射光纤（100）。 LED单元发射波长为320至450nm的蓝光，波长为480至530nm的绿光，波长为600和700nm的红光以及白光。 侧发光光纤通过电纺法形成，并与LED单元的组合表面（200a）组合。 侧光发射光纤由聚合物复合材料制成。

公开(公告)号：KR1020090116593A

公开(公告)日：2009-11-11

申请号：KR1020080071203

申请日：2008-07-22

Applicant: 한국전자통신연구원

Inventor： 임상철 ,  김성현 ,  양용석 ,  윤두협 ,  김진식

IPC: H01L29/786

CPC classification number: H01L51/0533 ,  G01N27/126

Abstract: PURPOSE: An organic thin film transistor, a method of manufacturing a transistor, and biosensor using the same are provided to protect an organic insulating layer from an external environment by forming an interface layer between a gate insulating layer and the organic semiconductor. CONSTITUTION: A gate electrode(20), a gate insulating layer(30), and a source/drain electrode(40) and an organic semiconductor layer(50) are included on a substrate(10). An interface layer is between the gate insulating layer and the organic semiconductor layer. The gate insulating layer includes an organic polymer, and the interface layer includes an inorganic matter. The gate insulating layer includes polyvinylphenol(PVP) or polyvinyl acetate(PVA), and it also includes a photoinitiator or a thermal initiator. The interface layer includes one selected from a group composed of Zns, CdS, and(Zn, Cd)S.

Abstract translation: 目的：提供有机薄膜晶体管，制造晶体管的方法和使用该晶体管的生物传感器，以通过在栅极绝缘层和有机半导体之间形成界面层来保护有机绝缘层免受外部环境的影响。 构成：在基板（10）上包括栅极（20），栅极绝缘层（30）以及源极/漏极电极（40）和有机半导体层（50）。 界面层位于栅极绝缘层和有机半导体层之间。 栅极绝缘层包括有机聚合物，并且界面层包括无机物质。 栅极绝缘层包括聚乙烯基苯酚（PVP）或聚乙酸乙烯酯（PVA），并且还包括光引发剂或热引发剂。 界面层包括从由Zn，CdS和（Zn，Cd）S组成的组中选择的界面层。

公开(公告)号：KR1020090089659A

公开(公告)日：2009-08-24

申请号：KR1020080014949

申请日：2008-02-19

Applicant: 한국전자통신연구원

Inventor： 김성현 ,  윤두협 ,  양용석 ,  임상철 ,  이수재

IPC: B82B3/00 ,  B82Y30/00

CPC classification number: B82B3/0038 ,  C01B13/14 ,  C01B32/158 ,  C01B32/956 ,  C01P2004/16

Abstract: A method for manufacturing a nano structure arranged by a near-field electrospinning method is provided to offer high charge transfer property based on an inorganic nano material such as metal oxide, carbon nanotube or wide semiconductor material etc. A method for manufacturing a nano structure arranged by a near-field electrospinning method includes the following steps of: preparing organic-inorganic mixing liquid by mixing an inorganic nano material in an organic solvent(S11); discharging the organic-inorganic mixing liquid through an injection nozzle(S12); evaporating a discharged material while arranging the discharged materials by a collector(S13). The inorganic nano material comprises metal oxide, carbon nanotube or wide semiconductor material etc. An organic solvent includes isopropyl.

Abstract translation: 提供一种通过近场静电纺丝方法制造的纳米结构体的制造方法，以提供基于无机纳米材料如金属氧化物，碳纳米管或宽半导体材料等的高电荷转移性能。一种制造纳米结构的方法， 通过近场静电纺丝法包括以下步骤：通过将无机纳米材料混合在有机溶剂中制备有机 - 无机混合液体（S11）; 通过注射喷嘴排出有机 - 无机混合液体（S12）; 在通过收集器排列排出的材料的同时蒸发排出的材料（S13）。 无机纳米材料包括金属氧化物，碳纳米管或宽半导体材料等。有机溶剂包括异丙基。

公开(公告)号：KR1020070113737A

公开(公告)日：2007-11-29

申请号：KR1020060047388

申请日：2006-05-26

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  김성현 ,  서경수 ,  임상철 ,  이정헌 ,  구찬회

IPC: H01L51/00

CPC classification number: H01L27/12 ,  H01L27/283 ,  H01L51/0554

Abstract: An inverter using a dual gate organic transistor is provided to embody a transistor used as a driver by an enhancement-type transistor by using an organic transistor made of a dual gate. An inverter includes a driver transistor including a dual gate structure and an organic channel wherein the driver transistor is connected to the load transistor. The driver transistor can include a lower gate electrode(11), an upper gate electrode(17) and a source/drain electrode(13,14). The lower gate electrode confronts the organic channel by interposing a first dielectric layer(12). The upper gate electrode confronts the organic channel by interposing a second dielectric layer(16). The source/drain electrode is connected to the organic channel.

Abstract translation: 提供了使用双栅极有机晶体管的反相器，通过使用由双栅极制成的有机晶体管，通过增强型晶体管来体现用作驱动器的晶体管。 逆变器包括驱动晶体管，其包括双栅极结构和有机沟道，其中驱动晶体管连接到负载晶体管。 驱动晶体管可以包括下栅电极（11），上栅电极（17）和源/漏电极（13,14）。 下栅电极通过插入第一介电层（12）来面对有机沟道。 上栅电极通过插入第二电介质层（16）来面对有机沟道。 源极/漏极连接到有机沟道。

公开(公告)号：KR100779081B1

公开(公告)日：2007-11-27

申请号：KR1020060027358

申请日：2006-03-27

Applicant: 한국전자통신연구원

Inventor： 김성현 ,  정태형 ,  구재본 ,  이정헌 ,  임상철

IPC: G01L1/20

Abstract: 본 발명은 전자 피부용 압력 센서 및 이의 제조 방법에 관한 것으로, 소정 압력 이상이 가해지면 전도도가 증가하는 전도성 고무, 전도성 고무의 양쪽 측면에 형성되어 전도성 고무에 전류가 흐르는 것을 측정하는 전극, 및 전극의 일측면 상단부에 형성되어 전도성 고무에 가해지는 압력을 분산시키는 탄성 고무;로 구성되어, 압력의 정도를 측정할 수 있는 전자 피부용 압력 센서 및 이를 제조할 수 있다.