公开(公告)号：JP2006013528A

公开(公告)日：2006-01-12

申请号：JP2005213413

申请日：2005-06-24

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： VAN DER SCHAAR MAURITS ,  BURGHOORN JACOBUS ,  VAN HAREN RICHARD JOHANNES FRA ,  MONSHOUWER RENE ,  MOS EVERHARDUS CORNELIS

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F7/105 ,  G03F7/168 ,  G03F9/708 ,  G03F9/7084

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus which enables more accurate alignment in a smaller time.
SOLUTION: The method of producing a marker (11) on a substrate (W) includes projecting a patterned beam on a layer (R) of resist disposed on the substrate (W) in a lithographic apparatus to create a latent marker (10); and locally heating the substrate (W) at the marker location in the lithographic apparatus to transform the latent marker (10) into a detectable marker (11).
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够在更短时间内更准确地对准的方法和装置。 解决方案：在衬底（W）上产生标记（11）的方法包括将图案化的光束投影在光刻设备中设置在衬底（W）上的抗蚀剂层（R）上以产生潜在标记（ 10）; 并且在所述光刻设备中的所述标记位置局部加热所述衬底（W），以将所述潜在标记物（10）变换成可检测标记物（11）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004279405A

公开(公告)日：2004-10-07

申请号：JP2003366656

申请日：2003-09-19

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： DEN BOEF ARIE JEFFREY ,  BORNEBROEK FRANK ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  DUSA MIRCEA ,  VAN HAREN RICHARD JOHANNES FRA ,  KIERS ANTOINE GASTON MARIE ,  KREUZER JUSTIN LLOYD ,  VAN DER SCHAAR MAURITS ,  VAN WIJNEN PAUL JACQUES ,  MOS EVERHARDUS CORNELIS ,  JAGER PIETER WILLEM HERMAN ,  VAN DER LAAN HANS ,  LUEHRMANN PAUL FRANK

IPC: G01B11/00 ,  G01B11/02 ,  G01B21/00 ,  G02B5/18 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/68 ,  H01L23/52 ,  H01S3/00

CPC classification number: G03F9/7084 ,  G03F9/7046 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

Abstract: PROBLEM TO BE SOLVED: To provide a device inspection method which has solved the conventional defects. SOLUTION: In the method, an asymmetrical marker on a device to be inspected is included; the form of the asymmetrical marker depends on the parameters to be inspected; a first measurement value of the position of the marker is obtained by directing light at the marker and detecting the diffracted light of a specified wavelength or of a diffracted angle; a secondary measured value of the position of the marker which is obtained by detecting the diffracted light of a different wavelength or at a different diffracted angle; a comparison between the first and second measurement positions which is performed so as to determine a shift indicating the degree of asymmetry of the marker. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：WO2008066375A3

公开(公告)日：2008-08-28

申请号：PCT/NL2007000298

申请日：2007-12-03

Applicant: ASML NETHERLANDS BV ,  MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS JOHANNES GERTR

Inventor： MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS JOHANNES GERTR

IPC: G03F7/20

CPC classification number: G03F7/70725 ,  G03F7/70258 ,  G03F7/70358 ,  G03F7/70458 ,  G03F7/70525 ,  G03F7/70633 ,  G03F7/70783

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.

Abstract translation: 光刻设备包括配置成调节辐射束的照明系统，图案形成装置的支撑件，用于衬底的衬底台，投影系统和控制系统。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。 扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。 控制系统耦合到支撑件，基板台和投影系统，用于分别控制支撑件，基板台和投影系统的作用。 控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真，从而减少了场内重叠误差。

公开(公告)号：WO2010034427A3

公开(公告)日：2011-03-24

申请号：PCT/EP2009006715

申请日：2009-09-17

Applicant: ASML NETHERLANDS BV ,  MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  MIDDLEBROOKS SCOTT ANDERSON

Inventor： MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  MIDDLEBROOKS SCOTT ANDERSON

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70525

Abstract: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate (W). In an embodiment, the scatterometer includes a measurement system (2) arranged to direct a beam of radiation (10) onto a target pattern on said substrate (W) and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement (P4) represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.

Abstract translation: 光刻系统包括光刻设备和散射仪。 在一个实施例中，光刻设备包括布置成照亮图案的照明光学系统和布置成将图案的图像投影到基板（W）上的投影光学系统。 在一个实施例中，散射仪包括测量系统（2），其被布置成将辐射束（10）引导到所述基板（W）上的目标图案上，并且获得代表从目标图案散射的辐射的瞳孔平面的图像 。 计算布置（P4）表示由一对正交基函数计算的瞳孔平面，并将力矩函数与光刻特征参数相关联以构建光刻系统识别。 控制装置使用系统识别来控制由光刻设备执行的后续光刻处理。

公开(公告)号：DE602007009729D1

公开(公告)日：2010-11-18

申请号：DE602007009729

申请日：2007-12-03

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS JOHANNES GERTRUDUS

IPC: G03F7/20

公开(公告)号：SG125922A1

公开(公告)日：2006-10-30

申请号：SG200305607

申请日：2003-09-19

Applicant: ASML NETHERLANDS BV

Inventor： BOEF DEN ARIE JEFFREY ,  BORNEBROEK FRANK ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  DUSA MIRCEA ,  HAREN VAN RICHARD JOHANNES FRA ,  KIERS ANTOINE GASTON MARIE ,  KREUZER JUSTIN LLOYD ,  SCHAAR VAN DER MAURITS ,  WIJNEN VAN PAUL JACQUES ,  MOS EVERHARDUS CORNELIS ,  JAGER PIETER WILLEM HERMAN ,  LAAN VAN DER HANS ,  LUEHRMANN PAUL FRANK

IPC: G01B11/00 ,  G01B11/02 ,  G01B21/00 ,  G02B5/18 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/68 ,  H01L23/52 ,  H01S3/00

Abstract: A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.

公开(公告)号：NL2013677A

公开(公告)日：2015-07-29

申请号：NL2013677

申请日：2014-10-24

Applicant: ASML NETHERLANDS BV

Inventor： WILDENBERG JOCHEM ,  MOS EVERHARDUS CORNELIS

IPC: G03F7/20 ,  H01L21/68

公开(公告)号：AT484010T

公开(公告)日：2010-10-15

申请号：AT07860862

申请日：2007-12-03

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS CORNELIS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS JOHANNES GERTRUDUS

IPC: G03F7/20

公开(公告)号：SG141384A1

公开(公告)日：2008-04-28

申请号：SG2007087513

申请日：2007-09-14

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  MAURITS VAN DER SCHAAR

Abstract: METHOD AND APPARATUS FOR ANGULAR-RESOLVED SPECTROSCOPIC LITHOGRAPHY CHARACTERIZATION Both the 1st and 0th diffraction orders are detected in a scatterometer. The 1st diffraction orders are used to detect the overlay error. The 0[err] diffraction order is then used to flag if this is a false overlay error calculation of magnitude greater than the bias but smaller than the pitch of the grating. Fig 1 & 4 [Fig. 4]

公开(公告)号：SG129366A1

公开(公告)日：2007-02-26

申请号：SG200604573

申请日：2006-07-06

Applicant: ASML NETHERLANDS BV

Inventor： SIMONS HUBERTUS JOHANNES GERTR ,  MEGENS HENRICUS JOHANNES LAMBE ,  MOS EVERHARDUS CORNELIS ,  VERSTAPPEN LEONARDUS HENRICUS ,  WERKMAN ROY ,  VERHOEVEN HENRICUS JACOBUS MAR

Abstract: The invention relates to a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.