公开(公告)号：DE3854451D1

公开(公告)日：1995-10-19

申请号：DE3854451

申请日：1988-06-10

Applicant: IBM

Inventor： ROGERS DENNIS L ,  WOODALL JERRY M ,  PETTIT GEORGE D ,  MC INTURFF DAVID T

IPC: H01L31/09 ,  G01J1/02 ,  H01L31/00 ,  H01L31/0304 ,  H01L31/108 ,  H01L31/109 ,  H01L31/10 ,  H01L31/18

公开(公告)号：CA1330194C

公开(公告)日：1994-06-14

申请号：CA600745

申请日：1989-05-25

Applicant: IBM

Inventor： CHISHOLM MATTHEW F ,  KIRCHNER PETER D ,  WARREN ALAN C ,  WOODALL JERRY M

IPC: C30B25/02 ,  C30B29/40 ,  C30B29/68 ,  H01L21/20 ,  H01L21/203 ,  H01L29/201 ,  C30B29/10

Abstract: Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant of the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.

公开(公告)号：DE3880019T2

公开(公告)日：1993-10-28

申请号：DE3880019

申请日：1988-05-31

Applicant: IBM

Inventor： FOWLER ALAN B ,  FREEOUF JOHN L ,  KIRCHNER PETER D ,  WARREN ALAN C ,  WOODALL JERRY M

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/314 ,  H01L21/331 ,  H01L21/338 ,  H01L29/06 ,  H01L29/26 ,  H01L29/267 ,  H01L29/43 ,  H01L29/47 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L29/40 ,  H01L21/285

Abstract: A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.

公开(公告)号：CA1244149A

公开(公告)日：1988-11-01

申请号：CA503080

申请日：1986-03-03

Applicant: IBM

Inventor： FREEOUF JOHN L ,  JACKSON THOMAS N ,  KIRCHNER PETER D ,  TANG JEFFREY Y-F ,  WOODALL JERRY M

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76 ,  H01L29/06

Abstract: SEMICONDUCTOR BALLISTIC ELECTRON VELOCITY CONTROL STRUCTURE A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a hand offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

公开(公告)号：CA1159628A

公开(公告)日：1984-01-03

申请号：CA356812

申请日：1980-07-23

Applicant: IBM

Inventor： FREEOUF JOHN L ,  WOODALL JERRY M

IPC: C01B3/00 ,  F17B1/00 ,  B01J19/04

Abstract: Hydrogen may be stored atomically and may be released molecularly by using as a host amorphous tetrahedrally coordinated material with high surface to volume ratio.

公开(公告)号：CA1153814A

公开(公告)日：1983-09-13

申请号：CA352400

申请日：1980-05-21

Applicant: IBM

Inventor： HOVEL HAROLD J ,  WOODALL JERRY M

IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/18

Abstract: CONTROL OF SURFACE RECOMBINATION LOSS IN SOLAR CELLS Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating. YO979-006

公开(公告)号：CA1136745A

公开(公告)日：1982-11-30

申请号：CA339638

申请日：1979-11-13

Applicant: IBM

Inventor： HODGSON RODNEY T ,  HOVEL HAROLD J ,  WOODALL JERRY M

IPC: H01L31/04 ,  H01L31/055 ,  H01L31/02

Abstract: OPTICAL ENERGY CONVERSION Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al2O3:Cr+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate. YO978-016

公开(公告)号：CA1052212A

公开(公告)日：1979-04-10

申请号：CA233465

申请日：1975-08-14

Applicant: IBM

Inventor： CUOMO JEROME J ,  WOODALL JERRY M ,  ZIEGLER JAMES F

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02

Abstract: PHOTON ENERGY CONVERTER An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：CA1023834A

公开(公告)日：1978-01-03

申请号：CA195118

申请日：1974-03-15

Applicant: IBM

Inventor： DUMKE WILLIAM P ,  WOODALL JERRY M

IPC: H01L21/208 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227 ,  H01S3/18

Abstract: A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are disclosed. In both of the heterostructure devices disclosed, the side surfaces of the active region are well defined. This is accomplished, in one instance, by surrounding the laser active region on all side surfaces with a higher band gap material which also has a lower index of refraction. Thus, the laser cavity is partially enclosed by a semiconductor material on one conductivity type of a band gap higher than the band gap of the material of the laser cavity. The remaining portion is enclosed by a band gap material higher than the material of the laser cavity but is of opposite conductivity type to the first mentioned higher band gap material. In another instance the side surfaces of the laser active region are partially surrounded by a high band gap material and partially by a region of opposite conductivity type to the active region; both of which regions contribute carriers to the active region. The laser devices disclosed are made, for example, from layers of appropriately doped P and N type gallium arsenide and from layers of P and N type gallium aluminum arsenide. The resulting devices can have very small cavity cross sections, optical and electrical confinement of the excitation at all the side surfaces, low electrical series resistance and a low thermal resistance due to geometrical factors.