公开(公告)号：DE102012203993A1

公开(公告)日：2012-09-20

申请号：DE102012203993

申请日：2012-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROESLER WERNER ,  DEBOY GERALD

IPC: H03K17/082 ,  H03K17/12

Abstract: Beschrieben wird eine Schaltung, die aufweist: einen Eingangsanschluss (11) und einen Ausgangsanschluss (12); wenigstens einen FET (2) mit einem Gatea wobei die Drain-Source-Strecke zwischen den Eingangsanschluss (11) und den Ausgangsanschluss (12) gekoppelt ist; wenigstens einen IGBT (3) mit einem Gateanschluss (G) und einer Kollektor-Emitter-Strecke (C-E), wobei die Kollektor-Emitter-Strecke (C-E) zwischen den Eingangsanschluss (11) und den Ausgangsanschluss (12) gekoppelt ist; eine Spannungsbegrenzungsschaltung (4), die an den Gateanschluss (G) des wenigstens einen IGBT gekoppelt ist und die dazu ausgebildet ist, den IGBT (3) im Ein-Zustand zu betreiben, wenn eine Spannung über der Kollektor-Emitter-Strecke (C-E) einen Spannungsschwellenwert erreicht; und eine Steuerschaltung (5) mit einem ersten Ansteuerausgang (51), der an den Gateanschluss (G) des wenigstens einen FET (2) gekoppelt ist.

公开(公告)号：DE59915172D1

公开(公告)日：2010-07-15

申请号：DE59915172

申请日：1999-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  WILLMEROTH ARMIN ,  DEBOY GERALD ,  STENGL JENS-PEER

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739

公开(公告)号：DE10240861B4

公开(公告)日：2007-08-30

申请号：DE10240861

申请日：2002-09-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  WILLMEROTH ARMIN ,  WAHL UWE

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/808

Abstract: The device has a channel zone (5A,5B,5C) arranged between a connection zone (2) and a drift zone. A first channel (51) formed adjacent to a control electrode is conductive when the control voltage is not equal to zero. A first terminal electrode (22) is connected to the drift zone via at least one second channel (71) of a first conductivity type, conductive when a control voltage is equal to zero. An Independent claim is included for a method of manufacturing a semiconductor device.

公开(公告)号：DE10259088B4

公开(公告)日：2007-01-25

申请号：DE10259088

申请日：2002-12-17

Applicant: INFINEON TECHNOLOGIES AG ,  FRAUNHOFER GES FORSCHUNG

Inventor： RADECKER MATTHIAS ,  DEBOY GERALD

IPC: H02M7/523 ,  H02M3/28

Abstract: In a resonance converter for driving variable loads at first an input signal provided by a switch controlled by control means is converted to an output signal by a transformer. The transformer is dimensioned and connected such that a downward transformation ratio between input signal and output signal is between 5:1 and 100:1 when providing nominal power to the variable load. The switching frequency of the switch is controlled on the basis of a phase shift between a switch current and a load current at variable load and/or variable input voltage, a quantity dependent on the input voltage, as well as a quantity dependent on the output voltage. The inventive resonance converter further enables driving variable loads efficiently with the aid of a transformer.

公开(公告)号：DE10122364B4

公开(公告)日：2006-10-19

申请号：DE10122364

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  DEBOY GERALD

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/336 ,  H01L29/167 ,  H01L29/36 ,  H01L29/78 ,  H03K17/0814

Abstract: A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.

公开(公告)号：DE59913715D1

公开(公告)日：2006-09-07

申请号：DE59913715

申请日：1999-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  STENGL JENS-PEER ,  STRACK HELMUT ,  WEBER HANS ,  GRAF HEIMO ,  RUEB MICHAEL ,  AHLERS DIRK

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.

公开(公告)号：DE10240861A1

公开(公告)日：2004-03-25

申请号：DE10240861

申请日：2002-09-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  WILLMEROTH ARMIN ,  WAHL UWE

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/808 ,  H01L21/336

Abstract: The device has a channel zone (5A,5B,5C) arranged between a connection zone (2) and a drift zone. A first channel (51) formed adjacent to a control electrode is conductive when the control voltage is not equal to zero. A first terminal electrode (22) is connected to the drift zone via at least one second channel (71) of a first conductivity type, conductive when a control voltage is equal to zero. An Independent claim is included for a method of manufacturing a semiconductor device.

公开(公告)号：DE10234493B3

公开(公告)日：2004-02-05

申请号：DE10234493

申请日：2002-07-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  WILLMEROTH ARMIN

IPC: G11C11/00 ,  H01L23/62 ,  H01L27/02 ,  H01L29/76 ,  H03K17/08

Abstract: The voltage sense signal generation device provides a LV signal proportional to the signal across the source (S) and drain electrodes of the power semiconductor component, using a capacitive voltage divider formed in the semiconductor body (1) parallel to the source-drain path, with a source-gate capacitance providing a LV signal tap-off element in series with a source-drain capacitance acting as a HV element.

公开(公告)号：DE10122361C2

公开(公告)日：2003-06-18

申请号：DE10122361

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  DEBOY GERALD ,  AHLERS DIRK ,  AUERBACH FRANZ ,  WILLMEROTH ARMIN

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/78 ,  H01L29/8605 ,  H01L29/36 ,  H01L29/739 ,  H01L29/749

公开(公告)号：DE19830332C2

公开(公告)日：2003-04-17

申请号：DE19830332

申请日：1998-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  MITLEHNER HEINZ ,  TIHANYI JENOE

IPC: H01L29/744 ,  H01L21/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861 ,  H01L29/739

Abstract: A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity type, opposite to the first conductivity type, is embedded. Regions of the second conductivity type are provided in the semiconductor body in a plane running substantially parallel to the surface of the surface region. The regions are in this case sufficiently highly doped that they cannot be depleted of charge carriers when a voltage is applied.