公开(公告)号：AU4568099A

公开(公告)日：2000-01-05

申请号：AU4568099

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: Disclosed is an electrode used for processing a semiconductor wafer through plasma etching operations. The electrode is disposed within a process chamber that includes a support chuck for holding the semiconductor wafer and a pair of RF power sources. The electrode has a center region, a first surface and a second surface. The first surface is configured to receive processing gases from a source and to flow the processing gases into the center region. The second surface has a plurality of gas feed holes that are continuously coupled to a corresponding plurality of electrode openings. Electrode opening diameters are greater than gas feed hole diameters. The plurality of electrode openings define an electrode surface that is over a wafer surface. The electrode surface assists in defining an electrode plasma sheath surface area which causes an increase in bias voltage onto the wafer surface, thereby increasing the ion bombardment energy over the wafer without increasing the plasma density.

公开(公告)号：IL180388A

公开(公告)日：2010-05-31

申请号：IL18038806

申请日：2006-12-27

Applicant: LAM RES CORP ,  WIEPKING MARK ,  LYNDAKER BRADFORD J ,  KUTHI ANDRAS ,  FISCHER ANDREAS

Inventor： WIEPKING MARK ,  LYNDAKER BRADFORD J ,  KUTHI ANDRAS ,  FISCHER ANDREAS

Abstract: A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

公开(公告)号：DE60036107T2

公开(公告)日：2008-05-21

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：PL195681B1

公开(公告)日：2007-10-31

申请号：PL34515999

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/302 ,  H01L21/3065

Abstract: Disclosed is an electrode used for processing a semiconductor wafer through plasma etching operations. The electrode is disposed within a process chamber that includes a support chuck for holding the semiconductor wafer and a pair of RF power sources. The electrode has a center region, a first surface and a second surface. The first surface is configured to receive processing gases from a source and to flow the processing gases into the center region. The second surface has a plurality of gas feed holes that are continuously coupled to a corresponding plurality of electrode openings. Electrode opening diameters are greater than gas feed hole diameters. The plurality of electrode openings define an electrode surface that is over a wafer surface. The electrode surface assists in defining an electrode plasma sheath surface area which causes an increase in bias voltage onto the wafer surface, thereby increasing the ion bombardment energy over the wafer without increasing the plasma density.

公开(公告)号：AU2003299889A8

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： KNOP ROBERT ,  THIE WILLIAM ,  BOYD JOHN ,  ANDERSON THOMAS W ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：HU0101824A2

公开(公告)日：2001-10-28

申请号：HU0101824

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: Disclosed is an electrode used for processing a semiconductor wafer through plasma etching operations. The electrode is disposed within a process chamber that includes a support chuck for holding the semiconductor wafer and a pair of RF power sources. The electrode has a center region, a first surface and a second surface. The first surface is configured to receive processing gases from a source and to flow the processing gases into the center region. The second surface has a plurality of gas feed holes that are continuously coupled to a corresponding plurality of electrode openings. Electrode opening diameters are greater than gas feed hole diameters. The plurality of electrode openings define an electrode surface that is over a wafer surface. The electrode surface assists in defining an electrode plasma sheath surface area which causes an increase in bias voltage onto the wafer surface, thereby increasing the ion bombardment energy over the wafer without increasing the plasma density.

公开(公告)号：CZ20004672A3

公开(公告)日：2001-05-16

申请号：CZ20004672

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H01J37/32

公开(公告)号：AU6199200A

公开(公告)日：2001-01-31

申请号：AU6199200

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：SG174831A1

公开(公告)日：2011-10-28

申请号：SG2011068012

申请日：2007-09-14

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

Abstract: OF THE DISCLOSUREMETHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSINGApparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.Figure 3

公开(公告)号：AT460743T

公开(公告)日：2010-03-15

申请号：AT99928674

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/302 ,  H01L21/3065

Abstract: Disclosed is an electrode used for processing a semiconductor wafer through plasma etching operations. The electrode is disposed within a process chamber that includes a support chuck for holding the semiconductor wafer and a pair of RF power sources. The electrode has a center region, a first surface and a second surface. The first surface is configured to receive processing gases from a source and to flow the processing gases into the center region. The second surface has a plurality of gas feed holes that are continuously coupled to a corresponding plurality of electrode openings. Electrode opening diameters are greater than gas feed hole diameters. The plurality of electrode openings define an electrode surface that is over a wafer surface. The electrode surface assists in defining an electrode plasma sheath surface area which causes an increase in bias voltage onto the wafer surface, thereby increasing the ion bombardment energy over the wafer without increasing the plasma density.