公开(公告)号：DE50011296D1

公开(公告)日：2006-02-16

申请号：DE50011296

申请日：2000-11-02

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  ACKLIN BRUNO ,  HEERLEIN JOERG ,  SCHLERETH KARL-HEINZ ,  SPAETH WERNER ,  SPIKA ZELJKO ,  HANKE CHRISTIAN ,  KORTE LUTZ ,  EBELING KARL ,  BEHRINGER MARTIN

IPC: H01S5/40 ,  H01L25/075 ,  H01L33/48 ,  H01S5/022

Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.

公开(公告)号：AT306133T

公开(公告)日：2005-10-15

申请号：AT00987065

申请日：2000-11-02

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  ACKLIN BRUNO ,  HEERLEIN JOERG ,  SCHLERETH KARL-HEINZ ,  SPAETH WERNER ,  SPIKA ZELJKO ,  HANKE CHRISTIAN ,  KORTE LUTZ ,  EBELING KARL ,  BEHRINGER MARTIN

IPC: H01S5/40 ,  H01L25/075 ,  H01L33/48 ,  H01S5/022

Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.

公开(公告)号：DE10107689A1

公开(公告)日：2003-01-02

申请号：DE10107689

申请日：2001-02-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GRAMANN WOLFGANG ,  OBERSCHMID RAIMUND ,  SPAETH WERNER ,  TEICH WOLFGANG

IPC: G01N21/66 ,  H01L21/66 ,  G01M11/00 ,  G01R31/26 ,  H01L33/00

Abstract: An electrolyte is introduced between the wafer contact region and probe contact (31) for establishing electrical connection between the wafer (2) and measuring probe (3). An Independent claim is included for opto-electronic component parameter measuring device.

公开(公告)号：DE19911717A1

公开(公告)日：2000-09-28

申请号：DE19911717

申请日：1999-03-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SPAETH WERNER ,  STATH NORBERT

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/00

Abstract: Monolithic electroluminescent device, having a row of emission zones (4) individually associated with radiation decoupling elements (5) for decoupling electromagnetic radiation from the device. A monolithic electroluminescent device has an active layer sequence (2) followed, in the radiation emission direction (9), by a radiation decoupling layer (13) adjoining a medium of refractive index (nM) less than that (nS) of the decoupling layer material. The active layer sequence (2) has several emission zones (4) which are arranged alongside one another in relation to the emission direction (9) and each of which is associated with a radiation decoupling element (5) of the decoupling layer (13) for decoupling electromagnetic radiation, produced in the emission zones (4), from the device. An Independent claim is also included for production of the above device. Preferred Features: The decoupling elements (5) consist of radiation transparent semiconductor material and are monolithically produced by conventional wet or dry chemical etching.