中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

150 records (took 0.048 seconds)

    A CASING OF A SENSOR MEASURING OSCILLATIONS, AND A SENSOR FOR MEASURING OSCILLATIONS
    31.
    发明申请
    A CASING OF A SENSOR MEASURING OSCILLATIONS, AND A SENSOR FOR MEASURING OSCILLATIONS 审中-公开
    传感器测量振荡的示意图和用于测量振荡的传感器

    公开(公告)号：WO2010112676A1

    公开(公告)日：2010-10-07

    申请号：PCT/FI2010/050247

    申请日：2010-03-29

    Applicant: VALTION TEKNILLINEN TUTKIMUSKESKUS ,  SILLANPÄÄ, Teuvo ,  KÄRKKÄINEN, Anu ,  PEKKO, Panu

    Inventor： SILLANPÄÄ, Teuvo ,  KÄRKKÄINEN, Anu ,  PEKKO, Panu

    IPC: B81C1/00 ,  B81B7/00 ,  H03H9/05 ,  H01L23/04 ,  H01L21/02 ,  B06B1/00

    CPC classification number: G01H11/00 ,  B81B7/0064 ,  B81B2201/0285 ,  B81B2207/092 ,  B81B2207/095

    Abstract: Oscillations are measured by an electromechanical sensor having a first surface with a groove (502) therein to separate a kinetic mass part (503) and a frame part (504) from each other. A casing encloses a sensor chip (112) and a circuit element (113, 322) for detecting a phenomenon occurring as the kinetic mass part moves. The sensor chip (112) is attached to an inner surface (506, 706) of the casing at the frame part side of the groove. The first surface (501) of the sensor chip, the inner surface (506, 706) of the casing, and the attachment (507, 707) of the sensor chip define a closed space into which the groove (502) opens.

    Abstract translation: 振荡由具有第一表面的机电传感器测量，第一表面具有凹槽（502），以将动力学部件（503）和框架部分（504）彼此分离。 壳体包围传感器芯片（112）和电路元件（113,322），用于检测动力部件移动时发生的现象。 传感器芯片（112）在槽的框架部分侧附接到壳体的内表面（506,706）。 传感器芯片的第一表面（501），壳体的内表面（506,706）和传感器芯片的附件（507,707）限定了凹槽（502）打开的封闭空间。

    LOW-COST MINIATURE MEMS VIBRATION SENSOR
    32.
    发明申请
    LOW-COST MINIATURE MEMS VIBRATION SENSOR 审中-公开
    低成本微型MEMS振动传感器

    公开(公告)号：WO2017142975A1

    公开(公告)日：2017-08-24

    申请号：PCT/US2017/018009

    申请日：2017-02-15

    Applicant: KNOWLES ELECTRONICS, LLC

    Inventor： VOLK, Martin ,  QUTUB, Sarmad

    IPC: H04R1/04 ,  H04R1/02 ,  B81B7/00

    CPC classification number: B81B7/0041 ,  B81B2201/0285 ,  B81C1/00269 ,  B81C2203/0145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H04R1/021 ,  H04R1/04 ,  H04R19/04 ,  H04R2201/003 ,  H01L2924/00014

    Abstract: A vibrational sensor comprises a microelectromechanical (MEMS) microphone having a base and a lid defining an enclosure, a MEMS acoustic pressure sensor within the enclosure, and a port defining an opening through the enclosure and material that is arranged to plug the port of the MEMS microphone. In embodiments, the MEMS microphone further includes an integrated circuit within the enclosure that is electrically connected to the MEMS acoustic pressure sensor. In some embodiments, the integrated circuit is configured to bias and buffer the MEMS acoustic pressure sensor. In these and other embodiments, the integrated circuit includes circuitry for conditioning and processing electrical signals generated by the MEMS acoustic pressure sensor. In embodiments, the material is arranged with respect to the port so as to cause the MEMS acoustical pressure sensor to sense vibrational energy rather than acoustic energy as in a conventional MEMS microphone.

    Abstract translation: 振动传感器包括微机电（MEMS）麦克风，微机电麦克风具有限定外壳的基座和盖子，外壳内的MEMS声压传感器以及限定穿过外壳的开口的端口，以及 被安排插入MEMS麦克风的端口。 在实施例中，MEMS麦克风还包括壳体内的电连接到MEMS声压传感器的集成电路。 在一些实施例中，集成电路被配置为偏置和缓冲MEMS声压传感器。 在这些和其他实施例中，集成电路包括用于调节和处理由MEMS声压传感器产生的电信号的电路。 在实施例中，材料相对于端口布置，以致使MEMS声学压力传感器感测振动能量而非传统MEMS麦克风中的声能。

    ＭＥＭＳセンサ用モジュール、振動駆動モジュール及びＭＥＭＳセンサ
    34.
    发明申请
    ＭＥＭＳセンサ用モジュール、振動駆動モジュール及びＭＥＭＳセンサ 审中-公开
    MEMS传感器模块，振动驱动模块和MEMS传感器

    公开(公告)号：WO2014203896A1

    公开(公告)日：2014-12-24

    申请号：PCT/JP2014/066040

    申请日：2014-06-17

    Applicant: ヤマハ株式会社

    Inventor： 岡見　威 ,  ▲辻▼　信昭 ,  小野　秀和

    IPC: G01C19/5747

    CPC classification number: G01C19/5712 ,  B81B3/0037 ,  B81B2201/0285 ,  B81B2203/0136 ,  B81B2203/019 ,  G01C19/5747 ,  H02N1/008

    Abstract: 　本発明のＭＥＭＳセンサ用モジュール、殊に振動駆動モジュールは、振動可能に支持され、振動方向に延在する可動電極と、この可動電極と略平行に配設され、前記振動方向に延在する固定電極と、前記可動電極の前記固定電極に対向する対向壁面上に前記振動方向に並設される複数の凸部と、前記固定電極の前記可動電極に対向する対向壁面上に前記可動電極の凸部と対向する複数の凸部とを有する。

    Abstract translation: 该MEMS传感器模块，特别是该振动驱动模块具有如下：可振动地支撑并沿振动方向延伸的可动电极; 固定电极，其基本上与所述可动电极平行设置，并且沿所述振动方向延伸; 在可动电极的面对固定电极的相对壁面上，与振动方向平行地彼此靠近设置的多个突起; 以及与可动电极的突起面对的多个突起，并且设置在与可动电极相对的固定电极的相对的壁面上。

    QUANTUM TUNNELLING TRANSDUCER DEVICE
    35.
    发明申请
    QUANTUM TUNNELLING TRANSDUCER DEVICE 审中-公开
    量子隧道式传感器装置

    公开(公告)号：WO2004094956A1

    公开(公告)日：2004-11-04

    申请号：PCT/AU2004/000523

    申请日：2004-04-22

    Applicant: QUANTUM PRECISION INSTRUMENTS PTY LTD ,  MICHALEWICZ, Marek, Tadeusz

    Inventor： MICHALEWICZ, Marek, Tadeusz

    IPC: G01D5/14

    CPC classification number: B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

    Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

    Abstract translation: 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
    36.
    发明授权
    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR 有权

    公开(公告)号：EP2073272B1

    公开(公告)日：2018-09-12

    申请号：EP07791105.5

    申请日：2007-07-20

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  HORIMOTO, Yasuhiro ,  KATO, Fumihito ,  MUNECHIKA, Masaki ,  WAKABAYASHI, Shuichi ,  TAKAHASHI, Toshiyuki ,  INUGA, Masayuki

    IPC: B81C1/00 ,  H04R19/04

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer
    37.
    发明公开
    Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer 审中-公开
    谐振换能器及其制造方法，以及用于谐振换能器的多层结构

    公开(公告)号：EP2829507A1

    公开(公告)日：2015-01-28

    申请号：EP14177608.8

    申请日：2014-07-18

    Applicant: Yokogawa Electric Corporation

    Inventor： Yoshida, Takashi ,  Okuda, Shuuji ,  Iwai, Shigeto

    IPC: B81B3/00 ,  G01L1/10 ,  H01L41/09 ,  H03H3/007 ,  H03H9/24 ,  G01N29/12

    CPC classification number: B81B3/0021 ,  B81B3/0002 ,  B81B7/02 ,  B81B2201/0271 ,  B81B2201/0285 ,  B81C1/00198 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L1/14 ,  G01N29/12 ,  G01N2291/014 ,  G01N2291/02827 ,  H01L41/094 ,  H03H3/0072 ,  H03H9/2463

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection, being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 本发明公开了一种谐振转换器，包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅制成的壳体，以间隙包围谐振器，并与硅单晶衬底一起形成腔室，激励模块 配置成激励谐振器;振动检测模块，配置为检测谐振器的振动;第一层，设置在腔室上方，第一层具有通孔;第二层，设置在第一层上;第三层，覆盖第一层 以及从所述第二层向所述谐振器延伸的突起，所述突起在空间上与所述谐振器分离，所述突起与所述第一层分开第一间隙，所述第二层与所述第一层分离 通过第二间隙，第一间隙与第二间隙连通。

    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
    38.
    发明公开
    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR 有权
    振动传感器及其制造方法振动传感器

    公开(公告)号：EP2073272A4

    公开(公告)日：2013-08-14

    申请号：EP07791105

    申请日：2007-07-20

    Applicant: OMRON TATEISI ELECTRONICS CO

    Inventor： KASAI TAKASHI ,  HORIMOTO YASUHIRO ,  KATO FUMIHITO ,  MUNECHIKA MASAKI ,  WAKABAYASHI SHUICHI ,  TAKAHASHI TOSHIYUKI ,  INUGA MASAYUKI

    IPC: B81C1/00 ,  H04R19/04

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    SEGMENTED ELECTRODE STRUCTURE FOR QUADRATURE REDUCTION IN AN INTEGRATED DEVICE
    39.
    发明公开
    SEGMENTED ELECTRODE STRUCTURE FOR QUADRATURE REDUCTION IN AN INTEGRATED DEVICE 审中-公开
    分段电极结构在一体化装置中的降低量化

    公开(公告)号：EP3270105A1

    公开(公告)日：2018-01-17

    申请号：EP16305917.3

    申请日：2016-07-14

    Applicant: NXP USA, Inc.

    Inventor： Cassagnes, Thierry ,  Trauth, Gerhard ,  Kniffin, Margaret Leslie ,  Geisberger, Aaron A

    IPC: G01C19/5726 ,  B81C1/00 ,  G01C19/5733 ,  G01C19/5769

    CPC classification number: G01C19/5726 ,  B81B2201/0285 ,  B81C1/00198 ,  B81C1/00246 ,  G01C19/5733 ,  G01C19/5755 ,  G01C19/5769

    Abstract: An integrated device includes a MEMS device, such as a gyroscope, having a movable mass spaced apart from a substrate, the movable mass being configured to oscillate in a drive direction relative to the substrate. The integrated device further comprises an integrated circuit (IC) die having a surface coupled with the MEMS device such that the movable mass is interposed between the substrate and the surface of the IC die. An electrode structure is formed on the surface of the IC die, the electrode structure including a plurality of electrode segments vertically spaced apart from the movable mass. Openings extend through the movable mass and the electrode segments overlie the openings. Suitably selected electrode segments can be activated to electrostatically attract the movable mass toward sense electrodes vertically spaced apart from the MEMS to reduce quadrature motion of the movable mass.

    Abstract translation: 集成装置包括诸如陀螺仪的MEMS装置，其具有与衬底间隔开的可移动质量，该可移动物质被配置成相对于衬底在驱动方向上振荡。 该集成器件还包括集成电路（IC）裸片，该集成电路（IC）裸片具有与MEMS器件耦合的表面，使得可移动块被插入在衬底和IC裸片的表面之间。 电极结构形成在IC管芯的表面上，电极结构包括与可移动质量垂直间隔开的多个电极段。 开口延伸穿过可移动物体并且电极段覆盖开口。 可以激活适当选择的电极段以静电吸引可移动块朝向与MEMS垂直间隔开的感测电极，以减少可移动块的正交运动。

Patent Agency Ranking