公开(公告)号：US20160181051A1

公开(公告)日：2016-06-23

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US09006964B2

公开(公告)日：2015-04-14

申请号：US13639290

申请日：2011-04-04

Applicant: Qiu-Hong Hu

Inventor： Qiu-Hong Hu

IPC: H01J1/304 ,  H01J63/04 ,  H01J31/12 ,  H01J63/02 ,  B82Y20/00

CPC classification number: H01J1/3044 ,  B82Y20/00 ,  H01J1/304 ,  H01J31/123 ,  H01J63/02 ,  H01J63/04 ,  H01J2201/3043 ,  H01J2201/30446 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0428 ,  H01J2329/0439 ,  H01J2329/0465 ,  H01J2329/0468 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Abstract translation: 本发明涉及包括至少部分导电的基底结构的外部发射阴极和空间上分布在基部结构处的多个导电千分尺尺寸的部分，其中每个微米尺寸部分的至少一部分被提供 具有多个导电纳米结构。 本发明的优点包括降低功率消耗以及例如增加光输出。 包括场发射阴极的场发射照明装置。

公开(公告)号：US08350459B2

公开(公告)日：2013-01-08

申请号：US12180210

申请日：2008-07-25

Applicant: Li Qian ,  Liang Liu ,  Shou-Shan Fan

Inventor： Li Qian ,  Liang Liu ,  Shou-Shan Fan

IPC: H01J1/46 ,  H01J1/52 ,  H01J17/04 ,  H01J17/12 ,  H01J19/38 ,  H01J19/40 ,  H01J21/10

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2203/0272

Abstract: A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

Abstract translation: 场致发射源的制造方法包括：提供绝缘基板; 在绝缘基板的至少一部分上构图阴极层; 在阴极层上形成多个发射体; 在绝缘基板，阴极层和发射体上涂覆光致抗蚀剂层; 将光致抗蚀剂层的预定部分暴露于辐射，其中暴露部分对应于发射体; 在光致抗蚀剂层上形成网状结构; 并去除光致抗蚀剂层的暴露部分。 该方法可以容易地进行，并且实现了场电子发射源具有高的电子发射效率。

公开(公告)号：US20100053126A1

公开(公告)日：2010-03-04

申请号：US12549456

申请日：2009-08-28

Applicant: Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

Inventor： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

IPC: G09G5/00 ,  H01J1/02 ,  H01J1/62

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

Abstract: An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

Abstract translation: 电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等 至或小于100nm。

公开(公告)号：US20090146547A1

公开(公告)日：2009-06-11

申请号：US12180210

申请日：2008-07-25

Applicant: LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

Inventor： LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

IPC: H01J1/62 ,  H01J9/00

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2203/0272

Abstract: A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

Abstract translation: 场致发射源的制造方法包括：提供绝缘基板; 在绝缘基板的至少一部分上构图阴极层; 在阴极层上形成多个发射体; 在绝缘基板，阴极层和发射体上涂覆光致抗蚀剂层; 将光致抗蚀剂层的预定部分暴露于辐射，其中暴露部分对应于发射体; 在光致抗蚀剂层上形成网状结构; 并去除光致抗蚀剂层的暴露部分。 该方法可以容易地进行，并且实现了场电子发射源具有高的电子发射效率。

公开(公告)号：EP2375435B1

公开(公告)日：2016-07-06

申请号：EP10159139.4

申请日：2010-04-06

Applicant: LightLab Sweden AB

Inventor： Hu, Qiu-Hong

IPC: H01J1/304 ,  H01J31/12 ,  H01J63/02

CPC classification number: H01J1/3044 ,  B82Y20/00 ,  H01J1/304 ,  H01J31/123 ,  H01J63/02 ,  H01J63/04 ,  H01J2201/3043 ,  H01J2201/30446 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0428 ,  H01J2329/0439 ,  H01J2329/0465 ,  H01J2329/0468 ,  H01J2329/0471 ,  H01J2329/0473

公开(公告)号：EP2194563A3

公开(公告)日：2011-04-20

申请号：EP09175519.9

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device (10), coated with a low-work function material, having good electron-emitting properties with high reproducibility. Differences in electron-emitting properties between electron-emitting devices each fabricated by the method are reduced. Before a structure (3) is coated with the low-work function material, a metal oxide layer (4) is formed on the structure (3).

公开(公告)号：EP2194557A2

公开(公告)日：2010-06-09

申请号：EP09175518.1

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: An electron-emitting device (10) includes an electroconductive member (3) and a lanthanum boride layer (5) disposed on the electroconductive member and further includes an oxide layer (4) between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. A lanthanum oxide layer (6) can be disposed on the lanthanum boride layer.

Abstract translation: 一种电子发射器件（10）包括导电元件（3）和设置在导电元件上的硼化镧层（5），还包括在导电元件和硼化镧层之间的氧化物层（4）。 氧化物层可以含有镧元素。 镧氧化物层（6）可以设置在硼化镧层上。

公开(公告)号：KR1020100062963A

公开(公告)日：2010-06-10

申请号：KR1020090118126

申请日：2009-12-02

Applicant: 캐논 가부시끼가이샤

Inventor： 아오끼나오후미 ,  니시다쇼지

IPC: H01J1/304

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: PURPOSE: An electron emitting device and a display panel including the same are provided to improve image quality of an image display device by stably generating current emitted from a discharge device. CONSTITUTION: An electron emitting device includes an electron emitting body(9) and emits electrons from the surface of the electron emitting body in an electric field. The electron emitting body includes a conductive member and a lanthanum boride layer(5) arranged on the conductive member. An oxide layer(4) is arranged between the conductive member and the lanthanum boride layer.

Abstract translation: 目的：提供一种电子发射器件和包括该电子发射器件的显示面板，以通过稳定地产生从放电装置发出的电流来提高图像显示装置的图像质量。 构成：电子发射器件包括电子发射体（9）并在电场中从电子发射体的表面发射电子。 电子发射体包括导电构件和布置在导电构件上的硼化镧层（5）。 氧化物层（4）布置在导电构件和硼化镧层之间。

公开(公告)号：JP5723440B2

公开(公告)日：2015-05-27

申请号：JP2013503080

申请日：2011-04-04

Applicant: ライトラブ スウェーデン アクティエボラーグ

Inventor： キュウ−ホン フー

IPC: H01J63/06 ,  H01J31/12 ,  H01J35/06 ,  H01J1/304

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J31/123 ,  H01J63/02 ,  H01J63/04 ,  B82Y20/00 ,  H01J2201/3043 ,  H01J2201/30446 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0428 ,  H01J2329/0439 ,  H01J2329/0465 ,  H01J2329/0468 ,  H01J2329/0471 ,  H01J2329/0473