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    VERFAHREN ZUR IMPEDANZANPASSUNG DER AUSGANGSIMPEDANZ EINER HOCHFREQUENZLEISTUNGSVERSORGUNGSANORDNUNG AN DIE IMPEDANZ EINER PLASMALAST UND HOCHFREQUENZLEISTUNGSVERSORGUNGSANORDNUNG
    31.
    发明公开
    VERFAHREN ZUR IMPEDANZANPASSUNG DER AUSGANGSIMPEDANZ EINER HOCHFREQUENZLEISTUNGSVERSORGUNGSANORDNUNG AN DIE IMPEDANZ EINER PLASMALAST UND HOCHFREQUENZLEISTUNGSVERSORGUNGSANORDNUNG 审中-公开
    方法阻抗匹配的高频电源装置的输出阻抗等离子体负载的阻抗和高频电源配置结构

    公开(公告)号：EP2719262A2

    公开(公告)日：2014-04-16

    申请号：EP12753385.9

    申请日：2012-05-16

    Applicant: TRUMPF Hüttinger GmbH + Co. KG

    Inventor： MERTE, Rolf

    IPC: H05H1/46

    CPC classification number: H01J37/241 ,  H01J37/32174 ,  H01J37/32183 ,  H03H7/40 ,  H05H1/46 ,  H05H2001/4682

    Abstract: The invention relates to a method for impedance matching the output impedance of a high-frequency power supply arrangement (1) to the impedance of a plasma load (2), comprising the following method steps: a. generating a high-frequency signal by means of a high-frequency signal generator (6); b. in a first impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) exclusively by changing the frequency of the generated high-frequency signal; c. monitoring the frequency of the generated high-frequency signal to ascertain whether said frequency is within a predetermined frequency range; d. if the frequency is outside the predetermined frequency range, in a second impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) by mechanically and/or electrically changing a circuit (11) connected downstream of the high-frequency signal generator (6).

    Power supply hardening for ion beam systems
    35.
    发明公开
    Power supply hardening for ion beam systems 有权
    兽医兽医兽医动物检疫

    公开(公告)号：EP1111651A2

    公开(公告)日：2001-06-27

    申请号：EP00311254.7

    申请日：2000-12-15

    Applicant: Axcelis Technologies, Inc.

    Inventor： Vanderberg, Bo Harald

    IPC: H01J37/317 ,  H01J37/24

    CPC classification number: H01J37/3171 ,  H01J37/241 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The ion implantation system includes at least one power supply (102,104,106) for providing voltage to at least one electrode (82,96,98,100) and, a switching system (108) operatively coupled between the at least one power supply and the at least one electrode. The switching system decouples the at least one power supply and the at least one electrode at a predetermined threshold to mitigate overload of the at least one power supply.

    Abstract translation: 离子注入系统包括用于向至少一个电极（82,96,98,100）提供电压的至少一个电源（102,104,106）和可操作地耦合在所述至少一个电源和所述至少一个电源之间的开关系统（108） 电极。 交换系统将至少一个电源和至少一个电极分离到预定阈值以减轻至少一个电源的过载。

    A METHOD OF ION BEAM CONTROL FOR GLITCH RECOVERY
    36.
    发明申请
    A METHOD OF ION BEAM CONTROL FOR GLITCH RECOVERY 审中-公开
    一种用于玻璃恢复的离子束控制方法

    公开(公告)号：WO2007111822A3

    公开(公告)日：2008-04-03

    申请号：PCT/US2007006069

    申请日：2007-03-09

    Applicant: AXCELIS TECH INC ,  WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID ,  SPLINTER PATRICK

    Inventor： WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID ,  SPLINTER PATRICK

    IPC: H01J37/248 ,  H01J37/24 ,  H01J37/304 ,  H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/241 ,  H01J37/248 ,  H01J37/304

    Abstract: The present invention is directed to a circuit and method for quickly quenching an arc that may form between high voltage extraction and/or suppression electrodes associated with an ion source of an ion implantation system to shorten the duration of the arc and mitigate non-uniform ion implantations, for example. The circuit and method also facilitates repainting the ion beam over those areas where an arc was detected to recover any dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc which may otherwise substantially discharge a HV capacitor of the supply and disrupt ion beam current which slowly recovers. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages to protect the HV switches.

    Abstract translation: 本发明涉及用于快速淬灭与离子注入系统的离子源相关的高电压提取和/或抑制电极之间形成的电弧的电路和方法，以缩短电弧的持续时间并减轻非均匀离子 植入例如。 电路和方法还有助于在检测到电弧的那些区域上再次离子束，以在这种电弧过程中恢复任何剂量损失。 在每个高压电源和其各自的电极之间增加一个高电压高速开关电路，以快速熄灭电弧，否则电弧可能会大大放电电源的HV电容器，并破坏缓慢恢复的离子束电流。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从无功元件吸收能量，并夹紧任何过电压以保护HV开关。

    A METHOD OF ION BEAM CONTROL FOR GLITCH RECOVERY
    37.
    发明申请
    A METHOD OF ION BEAM CONTROL FOR GLITCH RECOVERY 审中-公开
    一种用于玻璃恢复的离子束控制方法

    公开(公告)号：WO2007111822A2

    公开(公告)日：2007-10-04

    申请号：PCT/US2007/006069

    申请日：2007-03-09

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  WEIGUO, Que ,  HUANG, Yongzhang ,  YE, John ,  TAO, David ,  SPLINTER, Patrick

    Inventor： WEIGUO, Que ,  HUANG, Yongzhang ,  YE, John ,  TAO, David ,  SPLINTER, Patrick

    CPC classification number: H01J37/3171 ,  H01J37/241 ,  H01J37/248 ,  H01J37/304

    Abstract: The present invention is directed to a circuit and method for quickly quenching an arc that may form between high voltage extraction and/or suppression electrodes associated with an ion source of an ion implantation system to shorten the duration of the arc and mitigate non-uniform ion implantations, for example. The circuit and method also facilitates repainting the ion beam over those areas where an arc was detected to recover any dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc which may otherwise substantially discharge a HV capacitor of the supply and disrupt ion beam current which slowly recovers. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages to protect the HV switches.

    Abstract translation: 本发明涉及用于快速淬灭与离子注入系统的离子源相关的高电压提取和/或抑制电极之间形成的电弧的电路和方法，以缩短电弧的持续时间并减轻非均匀离子 植入例如。 电路和方法还有助于在检测到电弧的那些区域上再次离子束，以在这种电弧过程中恢复任何剂量损失。 在每个高压电源和其各自的电极之间增加一个高电压高速开关电路，以快速熄灭电弧，否则电弧可能会大大放电电源的HV电容器，并破坏缓慢恢复的离子束电流。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从无功元件吸收能量，并夹紧任何过电压以保护HV开关。

    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEMS
    39.
    发明申请
    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEMS 审中-公开
    离子植入系统中的电源检测和控制

    公开(公告)号：WO2006058169A2

    公开(公告)日：2006-06-01

    申请号：PCT/US2005042629

    申请日：2005-11-22

    Applicant: IBIS TECHNOLOGY CORP ,  RICHARDS STEVEN ,  BLAKE JULIAN G ,  CAMPBELL STEVEN

    Inventor： RICHARDS STEVEN ,  BLAKE JULIAN G ,  CAMPBELL STEVEN

    CPC classification number: H01J37/241 ,  H01J37/304 ,  H01J2237/0203

    Abstract: In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

    Abstract translation: 一方面，本发明提供一种管理提供给半导体处理装置的功率波动的方法，该方法包括监视提供给该装置的功率，以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时，可以中断半导体处理。 在功率波动事件结束之后，可以测量设备的至少一个操作参数，例如真空处理室中的真空度，并且当所测量的操作参数在可接受的范围内时，可以恢复半导体处理。 所测量的操作参数可以优选地包括当受到功率波动事件的不利影响时，比其他参数恢复得更慢的参数。

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