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公开(公告)号：KR101425760B1
公开(公告)日：2014-08-01
申请号：KR1020137005899
申请日：2011-07-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/3081 , G03F7/0046 , G03F7/0752 , G03F7/094 , G03F7/2041 , H01J37/32192 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31111 , H01L21/31122
Abstract: 피처리 기판이 되는 실리콘 기판 상에, 플루오르 카본층을 형성한다(A). 형성된 플루오르 카본층 위에, 레지스트층을 형성한다(B). 그 후, 레지스트층에 대하여 포토레지스트에 의한 노광을 행하고, 정해진 형상으로 패터닝을 행한다(C). 정해진 형상으로 패터닝된 레지스트층을 마스크로 하여 플루오르 카본층을 에칭한다(D). 다음에, 마스크로서의 레지스트층을 제거한다(E). 그 후, 남은 플루오르 카본층을 마스크로 하여 실리콘 기판을 에칭한다(F). 플루오르 카본층의 1층만으로 반사 방지막, 및 하드 마스크로서의 기능을 구비하기 때문에, 처리의 신뢰성을 향상시킬 수 있고, 비용을 저렴하게 할 수 있다.
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公开(公告)号：KR1020130136451A
公开(公告)日：2013-12-12
申请号：KR1020137006702
申请日：2011-08-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205 , H01L21/66 , G01N21/892
CPC classification number: G01N21/55 , H01J37/32192 , H01J37/32972 , H01L21/31116 , H01L22/12 , H01L22/26 , H01L29/6659 , H01L2924/0002 , H01L2924/00
Abstract: [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna. [Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.
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公开(公告)号：KR101057915B1
公开(公告)日：2011-08-19
申请号：KR1020087020405
申请日：2007-02-20
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L51/0008 , C23C14/12 , C23C14/20 , C23C14/228 , C23C14/243 , C23C14/34 , C23C14/568 , H01L51/0021 , H01L51/56
Abstract: A film forming apparatus is provided with a processing chamber having a substrate holding table for holding a substrate to be processed inside the container; a gas material generation unit arranged outside the processing chamber, for generating a gas material by evaporating or sublimating a film forming source material including a metal; a gas material supply unit for supplying the processing chamber with the gas material; and a transport path for transporting the gas material to the gas material supply unit from the gas material generation unit. The film forming apparatus is characterized in that a metal-containing layer is formed on an organic layer including a light emitting layer on the target substrate.
Abstract translation: 一种成膜装置，其特征在于，具备：处理室，其具有用于在容器内保持被处理基板的基板保持台; 气体材料产生单元，其布置在所述处理室的外部，用于通过蒸发或升华包含金属的成膜源材料来产生气体材料; 气体材料供应单元，用于向处理室供应气体材料; 以及传送路径，用于将气体材料从气体材料产生单元传送到气体材料供应单元。 该成膜装置的特征在于，在包括目标基板上的发光层的有机层上形成含金属层。
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公开(公告)号：KR101015683B1
公开(公告)日：2011-02-22
申请号：KR1020087021314
申请日：2007-03-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01L21/67126 , C23C16/4412 , C23C16/511 , C23C16/52 , H01J37/32834 , H01L21/67017 , Y10T137/85978
Abstract: 본 발명은 밸브 개방도를 실용 영역에서 사용할 때에 처리공간의 분위기를 탑재대의 주위에 균등하게 분산시켜 배기할 수 있는 처리 장치를 제공한다.
본 발명에 의하면, 바닥부에 배기구(50)를 갖고 진공배기 가능하게 이루어진 처리용기(42)와, 피처리체(W)를 탑재하기 위해 처리용기내에 마련된 탑재대(44)와, 배기구에 연결됨과 동시에 슬라이드식의 밸브체(94)에 의해 밸브구(98)의 개구 영역의 면적을 바꿀 수 있는 압력 제어 밸브(88)와, 압력 제어 밸브에 접속된 배기계(90)를 구비하고 피처리체에 대해 소정의 프로세스 압력하에서 소정의 처리를 실시하도록 한 낱장식의 처리 장치에 있어서, 압력 제어 밸브의 밸브 개방도의 실용 영역에 의해서 형성되는 개구 영역내에 상기 탑재대의 중심축이 위치하도록 압력 제어 밸브를 편심시켜 마련한다.-
公开(公告)号：KR1020080037077A
公开(公告)日：2008-04-29
申请号：KR1020087005903
申请日：2007-02-09
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/32192 , H01J37/32211 , H01J37/32229 , H01J37/3222 , H01J37/32311 , H01J37/3244 , H01J37/32825 , H05H1/46 , H05H2001/4622 , H05H2001/463
Abstract: Provided is a plasma treatment device characterized by comprising a treatment container having its ceiling portion opened to make its inside evacuative, a table disposed in the treatment container for placing an object to be treated thereon, a top plate mounted gastight in the opening of the ceiling portion and made of a dielectric material for transmitting microwaves, gas introducing means for introducing a necessary gas into the treatment container, a planar antenna member disposed on the upper face of the central portion of the top plate and having a microwave irradiating slot formed therein for introducing the microwaves of a predetermined propagation mode into the treatment container, a slotted waveguide mounted on the upper face of the peripheral portion of the top plate and having a microwave irradiating slot formed therein for introducing microwaves of a propagation mode different from that of the microwaves introduced by the planar antenna member, into the treatment container, and microwave feeding means for feeding the microwaves to the planar antenna member and the slotted waveguide.
Abstract translation: 本发明提供一种等离子体处理装置，其特征在于，包括处理容器，其顶部开口以使其内部抽真空，设置在处理容器中的用于放置待处理对象的工作台，顶板安装在天花板的开口中 由用于传输微波的电介质材料制成，用于将必要气体引入处理容器的气体引入装置，设置在顶板中心部分的上表面上并具有形成在其中的微波照射槽的平面天线构件， 将预定传播模式的微波引入处理容器，安装在顶板周边部分的上表面上并具有形成在其中的微波照射槽的开槽波导，用于引入与微波不同的传播模式的微波 由平面天线构件引入到处理容器中， 以及用于将微波馈送到平面天线构件和开槽波导的微波馈送装置。
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Patent Agency Ranking
公开(公告)号：KR1020080015056A
公开(公告)日：2008-02-15
申请号：KR1020087002170
申请日：2004-05-31
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/32266 , H01J37/32192 , H01J2237/332 , H01L21/3065
Abstract: A plasma processing apparatus is disclosed which enables to conduct a preferable plasma processing while suppressing damage to an object to be processed which is caused by plasma generation. The plasma processing apparatus comprises at least a plasma processing chamber wherein a plasma process is performed on an object to be processed, an object-holding means for placing the object within the plasma processing chamber and a plasma generating means for generating a plasma in the plasma processing chamber, and the plasma generating means can be intermittently supplied with energy.
Abstract translation: 公开了一种等离子体处理装置，其能够进行优选的等离子体处理，同时抑制由等离子体产生引起的待处理对象的损坏。 等离子体处理装置至少包括等离子体处理室，其中对被处理物体进行等离子体处理，用于将物体放置在等离子体处理室内的物体保持装置和用于在等离子体中产生等离子体的等离子体产生装置 处理室，等离子体产生装置可以间歇地供给能量。
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公开(公告)号：KR1020060038466A
公开(公告)日：2006-05-03
申请号：KR1020067002758
申请日：2004-09-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01J37/32458 , H01J37/32192 , H01J37/32238
Abstract: A plasma processing device, wherein an antenna part (3) driven by microwaves to generate electromagnetic field is disposed in an opening part at the top of a chamber (1), a top board (4) sealing the opening part of the chamber (1) is installed under the antenna part (3), a ring-shaped projected line (41) is formed on the lower surface of the top board (4), and the thickness of the projected line in the radial direction is continuously varied in a tapered shape to oscillate any part of the projected line in any conditions of plasma. Since the same effect can be provided as in a case in which top boards with different thicknesses are prepared by preparing merely one type of the top board, the plasma absorbing efficiency of the top board can be remarkably increased, and the plasma can be generated stably in a high to low pressure range.
Abstract translation: 一种等离子体处理装置，其中由微波驱动以产生电磁场的天线部分（3）设置在室（1）的顶部的开口部分中，密封腔室（1）的开口部分的顶板（4） ）安装在天线部分（3）的下方，在顶板（4）的下表面上形成环形突起线（41），并且径向方向上的投影线的厚度在 在任何等离子体条件下振荡任意部分投影线的锥形。 由于可以提供与通过仅制备一种类型的顶板制备具有不同厚度的顶板的情况相同的效果，因此可以显着提高顶板的等离子体吸收效率，并且可以稳定地产生等离子体 在高低压范围内。
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公开(公告)号：KR1020060036053A
公开(公告)日：2006-04-27
申请号：KR1020057022678
申请日：2004-05-31
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/32266 , H01J37/32192 , H01J2237/332 , H01L21/3065
Abstract: A plasma processing apparatus is disclosed which enables to conduct a preferable plasma processing while suppressing damage to an object to be processed which is caused by plasma generation. The plasma processing apparatus comprises at least a plasma processing chamber wherein a plasma process is performed on an object to be processed, an object-holding means for placing the object within the plasma processing chamber and a plasma generating means for generating a plasma in the plasma processing chamber, and the plasma generating means can be intermittently supplied with energy.
Abstract translation: 公开了一种等离子体处理装置，其能够进行优选的等离子体处理，同时抑制由等离子体产生引起的待处理对象的损坏。 等离子体处理装置至少包括等离子体处理室，其中对被处理物体进行等离子体处理，用于将物体放置在等离子体处理室内的物体保持装置和用于在等离子体中产生等离子体的等离子体产生装置 处理室，等离子体产生装置可以间歇地供给能量。
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公开(公告)号：KR1020050109503A
公开(公告)日：2005-11-21
申请号：KR1020057015478
申请日：2004-03-17
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 노자와도시히사
IPC: H01L21/68
CPC classification number: H01L21/6833 , Y10T279/23
Abstract: A substrate holding mechanism, comprising a placement table having a surface and a projected part continuously formed on the surface so as to surround a specified area on the surface, having an upper surface higher than the surface, and formed by an outer peripheral surface and holding a treated substrate, an electrostatic attracting plate installed in an area surrounded by the projected part on the surface and attracting the substrate by electrostatic action, a first protective member having a side surface, installed on the electrostatic attracting plate, partly opposed to the upper surface, and protecting the electrostatic attracting plate, an adhesive agent layer installed at least between the electrostatic attracting plate and the first protective member and adhering the electrostatic attracting plate to the first protective member, and a second protective member covering the outer peripheral surface and the side surface so that at least the adhesive agent layer can be closed.
Abstract translation: 一种基板固定机构，其特征在于，具有在所述表面上连续地形成有表面的规定区域的表面和突出部，所述表面和突出部具有表面高于所述表面的上表面，并且由外周面形成， 经处理的基板，安装在由表面上的突出部分包围的区域中并通过静电吸引基板的静电吸引板，具有侧表面的第一保护构件，安装在静电吸引板上，部分地与上表面 并且保护静电吸引板，至少安装在静电吸引板和第一保护构件之间并将静电吸引板粘附到第一保护构件的粘合剂层和覆盖外周面和侧面的第二保护构件 表面，使得至少粘合剂层可以封闭。
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公开(公告)号：KR1020050013201A
公开(公告)日：2005-02-03
申请号：KR1020047019643
申请日：2003-05-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065
CPC classification number: H01J37/32192 , H01J37/32238
Abstract: 플라즈마 처리 장치는 플라즈마 처리를 내부에서 실행하기 위한 챔버(1)와, 이 챔버(1)의 상측을 막는 유전체로 이루어지는 천판(15)과, 이 천판(15)을 거쳐 고주파를 챔버(1) 내에 공급하는 고주파 공급 수단으로서의 안테나부(3)를 구비한다. 천판(15)은 그 내부에 반사 부재(23a, 23b)를 구비한다. 반사 부재(23a, 23b)의 측벽은 천판(15) 내를 직경 방향으로 전파하는 고주파를 반사하기 위한 파 반사 수단으로서 작용한다. 또는, 반사 부재가 없고, 천판(15)의 오목부의 측벽을 파 반사 수단으로 해도 좋다.
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