Abstract:
PURPOSE: A flux composition for solder bumps is provided to have the flux composition in which flux reflow profile and copper corrosion property are excellent, thereby having the excellent bump shape and forming the solder bump in which the defective product is not generated. CONSTITUTION: A flux composition for forming solder bumps includes resin, activator and solvent; and the resin comprises gum rosin and rosin ester; a mass ratio of the gum rosin versus rosin ester is 60:40 ~ 90:10. In addition, a semiconductor device manufacturing method comprises: a step of forming a bump (15) on the substrate (1); a step of providing the flux composition to cover the bump; a step of reflowing the bump; a step of removing a residual flux composition.
Abstract:
PURPOSE: A semiconductor package and a method for manufacturing thereof are provided to suppress a short circuit between a semiconductor chip and a wire by forming an insulating layer beyond the edge of the semiconductor chip. CONSTITUTION: In a device, a semiconductor chip(400) includes a print circuit board, an electrode pad(420) electrically connected to an integrated circuit, and an insulating layer(240) for protecting the integrated circuit. The insulating layer covers the whole top of the semiconductor chip excluding the electrode pad. The insulating layer is extended over the edge of the semiconductor chip. The insulating layer is formed with a polyimide to protect the semiconductor chip from the outside and prevent damage to the integrated circuit. The polyimide is formed in the edge between the electrode pad of the bonding wire and the semiconductor chip. A short circuit between the bonding wire and the semiconductor chip are controlled by the polyimide.
Abstract:
A multi-chip package and method for manufacturing are disclosed. The multi-chip package may include a substrate, a lower semiconductor chip mounted on the substrate, a first electrical connection for electrically connecting the substrate and the lower semiconductor chip, an upper semiconductor chip attached to the lower semiconductor chip and having overhang portions, and at least one bump interposed between the substrate and the overhang portions. The at least one bump may support the overhang portions and may be formed when the first electrical connection is formed.
Abstract:
PURPOSE: An interconnection board for an NSMD(non solder mask defined)-type BGA(ball grid array) package is provided to avoid a crack in a pattern by reducing concentration of stress on an interface between an interconnection pattern and a solder mask. CONSTITUTION: A body of a board is prepared. An interconnection pattern(70) of a copper material is formed on a surface of the body of the board, including a solder ball pad(72) and a connection pattern(74) connected to the solder ball pad. The first solder mask is formed on a surface of the body of the board, including the first open part(81) to which a part of the solder ball pad and the connection pattern broader than the substantial open part of the solder ball pad is exposed. A plating layer is formed on the solder ball pad and the connection pattern exposed to the first open part. The first solder mask is covered with the second solder mask(84) including the second opening part that corresponds to the substantial open part of the solder ball pad and is narrower than the first open part, wherein a part of the solder ball pad and the connection pattern is exposed to the second open part(83). The interfacial surface of the first open part is protected by the second solder mask.
Abstract:
PURPOSE: A chip-level three-dimensional multichip package is provided to embody a multichip package not in a package level but in a chip level, by making chip selecting terminals automatically separated through a chip selecting pad formed in an integrated circuit device. CONSTITUTION: One chip selecting terminal(12a) is formed on a chip. (N-1) chip selecting pads are formed on the chip, adjacent to the chip selecting terminal. An insulation layer is formed on the chip. (N-1) metal interconnections are formed inside the insulation layer, connected to the respective chip selecting pads. A plurality of upper connecting terminals(22,22a) are formed on the insulation layer, connected to the respective metal interconnections. A plurality of lower connecting terminals(23,23a,23c) are formed under the chip, corresponding to the chip selecting terminal and the chip selecting pads. A plurality of trench interconnections connect the chip selecting terminal and the chip selecting pads with the respective lower connecting terminals, penetrating the chip. The first chip selecting pad adjacent to the chip selecting terminal is connected to the upper connecting terminal formed over the chip selecting terminal. The (N-1)th chip selecting pad is connected to the upper connecting terminal formed over the (N-2)th chip selecting pad. The upper connecting terminals are attached to the lower connecting terminals to form a stacked layer. The chip selecting terminals formed in the integrated circuit devices(110,120,130,140) are automatically separated and connected from/to the lower connecting terminals located in the lowermost position.
Abstract:
PURPOSE: A multi-chip package and a method for fabricating the same are provided to prevent a mechanical contact between a processing apparatus and a conductive metal line used for a semiconductor chip and wire bonding. CONSTITUTION: The first semiconductor chip(11) and the second semiconductor chip(13) are adhered to upper faces and lower faces of two rectangular die pads(23a,23b) by using an adhesive(35). Each edge portion of the first semiconductor chip(11) and the second semiconductor chip(13) are supported by the die pads(23a,23b). The die pads(23a,23b) have projected areas(A,B), respectively. Each electrode pad(12,14) of the first semiconductor chip(11) and the second semiconductor chip(13) is connected with an upper face and a lower face of an inner end portion of an inner lead(21) by using conductive metal lines(31,32). A package body(40) is formed by an epoxy molding resin. The epoxy molding resin is filled between first semiconductor chip(11) and the second semiconductor chip(13).