Abstract:
반도체기판의 세정/건조 공정에 사용되는 웨이퍼 가이드를 제공한다. 이 웨이퍼 가이드는 수평면과 평행한 지지판넬 및 상기 지지판넬의 일면에 부착된 적어도 3개의 평행한 수직판넬들을 구비한다. 상기 수직 판넬들의 각각은 수직한 바디판넬 및 상기 바디 판넬의 상부면으로부터 상부로 연장된 복수개의 돌출부들을 갖는다. 상기 돌출부들 사이의 갭 영역들은 웨이퍼들을 홀딩하는 슬롯들의 역할을 한다. 상기 돌출부들은 소수성 물질(hydrophobic material)로 이루어지고, 상기 수직한 바디 판넬은 친수성 물질(hydrophilic material)로 이루어진다.
Abstract:
A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.
Abstract:
PURPOSE: A wafer guide used for cleaning/drying processes of a semiconductor substrate is provided to minimize contact surface between wafers by forming roundly a sidewall and a bottom of a guide slot. CONSTITUTION: A wafer guide includes a support panel and at least two vertical panels attached to one side of the support panel. Each vertical panel has a body part and a plurality of protrusions(5a,5b,5c) for defining a plurality of slots. Both sidewalls(5s) and a bottom of each slot have convex shaped profiles. A central panel is located between the two vertical panels.
Abstract:
PURPOSE: Wafer guides used in a process for cleaning and drying a semiconductor substrate are provided to improve drying efficiency of wafers by minimizing a contact area between a wafer guide and the wafers and by uniformly controlling the intervals between the wafers while using an auxiliary wafer guide broader than a main wafer guide or a wafer aligning unit. CONSTITUTION: The main wafer guide(10) holds semiconductor wafers(63). The auxiliary wafer guide(61) has a width greater than that of the main wafer guide. The auxiliary wafer guide includes an auxiliary supporter and a pair of parallel wafer supporters. The auxiliary supporter has a width greater than that of the main wafer guide. The pair of parallel wafer supporters additionally hold the semiconductor wafers, positioned on both edges of the auxiliary supporter, respectively.
Abstract:
PURPOSE: A plasma measurement apparatus provided with an optical emission spectrometer is provided to detect the concentration of the plasma for each positions of the plasma chamber. CONSTITUTION: A plasma measurement apparatus provided with an optical emission spectrometer includes an optical transmission block(18) for converging the plasma light in the chamber and for transmitting the converged plasma light, a photoelectrical convert system(23) for converting the plasma light transmitted through the optical transmission block(18) into an electrical signal and a processor(26) for analyzing the electrical signal converted at the photoelectrical convert system(23). The optical transmission block(18) is provided with a lens unit having a predetermined focal length, a collimator for making the light parallel after passing therethrough and an optical fiber for transmitting the collimated light passing through the collimator to the photoelectrical convert system(23).
Abstract:
PURPOSE: A drying equipment and method are provided to be capable of maximizing Marangoni effect by controlling the flow and exhaust of liquid using a gas distributor and a liquid flow system. CONSTITUTION: A chamber is provided with a hood(11) and a cover(13). A gas distributor(15) is installed in the upper portion of the chamber for drying semiconductor substrate(9) using gas. A liquid storing bath(3a) is installed in the lower portion of the chamber for cleaning the semiconductor substrates. A liquid flow system is connected with the liquid storing bath for flowing liquid into the liquid storing bath and exhausting the liquid from the liquid storing bath. The chamber further includes a plurality of exhaust ports(11a) located opposite to each other. Preferably, Marangoni drying principle is achieved by controlling the flow and exhaust of the liquid using the gas distributor and the liquid flow system. Preferably, the liquid flow system includes a flexible pipe(19).
Abstract:
PURPOSE: A process monitoring device and a semiconductor process apparatus with the same, and a process monitoring method are provided to monitor a semiconductor manufacturing process regardless of pressure by extending the pressure range of the process monitoring device. CONSTITUTION: A housing(411) comprises an upper wall(411a), a bottom wall(411b), and a sidewall(411c). A plasma unit(420) generates plasma by ionizing a discharge gas. The plasma unit comprises a first electrode(422), a second electrode(424), and a power supply unit(426). The power supply unit applies the power to one of the first electrode and the second electrode. An optical emission spectrum unit(440) analyzes the light of the plasma generated from the plasma unit.
Abstract:
공정 모니터링 장치와, 이를 이용한 공정 모니터링 방법이 제공된다. 공정 모니터링 장치는 유전체 장벽 방전(DBD) 방식을 이용하여 챔버의 배기 가스로부터 플라즈마를 발생하고, 플라즈마 방출 광의 분광 스펙트럼을 분석하여 챔버 내에서 진행되는 반도체 제조 공정을 모니터링한다.
Abstract:
A cleaning solution for removing impurity, a substrate cleaning method, and a manufacturing method of a semiconductor device using the same are provided to effectively remove impurity without damage to a conductive structure by using a cleaning solution including an etching accelerator. A cleaning solution for removing impurity of a semiconductor substrate is prepared, and includes hydroxide alkyl ammonium compound 0.5-5 weight%, fluoric compound 0.1-3 weight%, buffer agent 0.1-3 weight%, etching accelerator 0.5-5 weight%, and extra water(S110). The impurity is removed from the substrate by performing a cleaning process using the cleaning solution for removing the impurity about a semiconductor substrate in which a conductive structure having the impurity is formed(S120). The semiconductor substrate is rinsed(S130). The semiconductor substrate is dried(S140). The cleaning process of the substrate is performed in a single type cleaning device for 30-90 minutes.
Abstract:
A method for detecting a metal concentration is provided to detect a concentration of metal contaminants contained in the air inside a space such as a clean room. A method for detecting a metal concentration comprises the steps of: dissolving a metal in the air in a solvent by extracting air from a space and supplying it to the solvent; irradiating light to mixed liquid prepared by mixing the solution containing the dissolved metal with a reagent chemically combined with the metal; and detecting the metal concentration by using a light absorption degree of the mixed liquid.