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41.发明授权자기정렬공정을 이용한 전계 효과 트랜지스터 채널 구조를 가지는 스캐닝 프로브 마이크로 스코프의 탐침 제조 방법 失效자기정렬공정을이용한전계효과트랜스터터채널채널구조를가지는스캐닝프로브마이크로스코프의탐침제조방법
公开(公告)号：KR100468849B1
公开(公告)日：2005-01-29
申请号：KR1020020025399
申请日：2002-05-08
Applicant: 삼성전자주식회사
CPC classification number: G01Q60/30
Abstract: Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.
Abstract translation: 提供一种制造具有利用自对准制造的场效应晶体管（FET）沟道结构的扫描探针显微镜（SPM）的探针的方法。 所提供的方法包括：第一步骤，在衬底上形成第一形状的掩模层;以及在衬底的除了掩模层之外的区域中形成源极区域和漏极区域; 第二步骤，在与掩模层垂直的方向上图案化第一形状的光致抗蚀剂，并且执行蚀刻工艺以形成第二形状的掩模层; 以及蚀刻除了掩模层之外的衬底区域以形成探针的第三步骤。 所提供的方法使尖端的中心与存在于源极区域和漏极区域之间的沟道的中心对齐以实现具有几十纳米尺寸的尖端。 因此，可以使用具有尖端的探针容易地制造纳米器件。
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42.发明公开자기정렬공정을 이용한 전계 효과 트랜지스터 채널 구조를 가지는 스캐닝 프로브 마이크로 스코프의 탐침 제조 방법 失效使用自对准过程制造具有场效应晶体管（FET）通道结构的扫描探针微观探针的方法
公开(公告)号：KR1020030087371A
公开(公告)日：2003-11-14
申请号：KR1020020025399
申请日：2002-05-08
Applicant: 삼성전자주식회사
CPC classification number: G01Q60/30
Abstract: PURPOSE: A method for manufacturing a probe of a scanning probe microscope having a FET(Field Effect Transistor) channel structure using a self-alignment process is provided to be capable of aligning the center portion of a channel to the end portion of a tip by forming a predetermined source and drain at the end portion of the tip. CONSTITUTION: After forming stripe type mask layer(33g) on the surface of a semiconductor substrate(31), a source and drain region(32,34) are formed by implanting doped dopants and carrying out a heat treatment at the predetermined portion of the semiconductor substrate except the mask layer. After forming a stripe type photoresist layer across the mask layer, a rectangle type mask layer is formed by carrying out an etching process. Then, a probe is formed by selectively etching the resultant structure.
Abstract translation: 目的：提供一种使用自对准方法制造具有FET（场效应晶体管）通道结构的扫描探针显微镜的探针的方法，以能够将通道的中心部分与尖端的端部对准 在尖端的端部处形成预定的源极和漏极。 构成：在半导体衬底（31）的表面上形成条形掩模层（33g）之后，通过注入掺杂的掺杂剂并在预定的部分进行热处理来形成源区和漏区（32,34） 除了掩模层之外的半导体衬底。 在掩模层之间形成条纹型光致抗蚀剂层之后，通过进行蚀刻工艺形成矩形型掩模层。 然后，通过选择性蚀刻所得结构形成探针。
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公开(公告)号：KR1020150084362A
公开(公告)日：2015-07-22
申请号：KR1020140004302
申请日：2014-01-14
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14616
Abstract: 단위픽셀은센싱트랜지스터, 포토다이오드및 리셋드레인영역을포함한다. 센싱트랜지스터는반도체기판내에형성된기준활성영역과출력활성영역및 게이트전압에응답하여기준활성영역과출력활성영역을전기적으로연결하도록기준활성영역과출력활성영역사이의반도체기판위에형성된게이트를포함한다. 포토다이오드는게이트하부의반도체기판내에형성된다. 리셋드레인영역은게이트에의해게이트전압에응답하여포토다이오드와전기적으로연결되도록반도체기판내에형성된다. 단위픽셀은단위픽셀에포함되는트랜지스터의개수를줄여이미지센서의해상도를높이면서이미지센서를소형화시킬수 있다.
Abstract translation: 单位像素包括感测晶体管，光电二极管和复位漏极区域。 感测晶体管包括：参考有源区和形成在半导体衬底中的输出有源区; 以及形成在所述参考有源区域和所述输出有源区域之间的所述半导体衬底上的栅极，以响应于栅极电压来电连接所述参考有源区域和所述输出有源区域。 光电二极管形成在栅极的下部的半导体衬底中。 复位漏极区域形成在半导体衬底中，以响应栅极的栅极电压而与光电二极管电连接。 单位像素通过减少单位像素中包括的晶体管的数量来提高图像传感器的分辨率，并且可以使图像传感器小型化。
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公开(公告)号：KR1020140112275A
公开(公告)日：2014-09-23
申请号：KR1020130026807
申请日：2013-03-13
Applicant: 삼성전자주식회사
IPC: G01N21/45 , G01N33/483 , G01B9/02
CPC classification number: G01N21/77 , G01N2021/7789
Abstract: Disclosed are an optical bio sensor for measuring the concentration of bio substances based on optical phenomenon and an operation method thereof. The optical bio sensor according to an embodiment of the present invention comprises a bio sensing part for receiving first and second light signals generated by phase-modulated light signals, outputting a sensing signal by transmitting the first light signal through a first light path having a sensing resonator, and outputting a reference signal by transmitting the second light signal through a second light path having a reference resonator; a detection part receiving the sensing signal and the reference signal, detecting the phase components of the sensing signal and the reference signal through signal demodulating operation, and detecting the phase difference between the sensing signal and the reference signal according to the detected phase components; and a signal processing part for calculating the concentration of bio substances based on the detected phase difference.
Abstract translation: 公开了一种用于基于光学现象测量生物物质的浓度的光学生物传感器及其操作方法。 根据本发明实施例的光学生物传感器包括用于接收由相位调制光信号产生的第一和第二光信号的生物传感部分，通过经由具有感测的第一光路传输第一光信号而输出感测信号 并且通过经由具有参考谐振器的第二光路传输第二光信号而输出参考信号; 接收感测信号和参考信号的检测部分，通过信号解调操作检测感测信号和参考信号的相位分量，并根据检测到的相位分量检测感测信号和参考信号之间的相位差; 以及信号处理部，其基于检测出的相位差计算生物物质的浓度。
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公开(公告)号：KR1020140047505A
公开(公告)日：2014-04-22
申请号：KR1020130044293
申请日：2013-04-22
Applicant: 삼성전자주식회사
IPC: H04N5/369
CPC classification number: H04N5/378 , H04N5/361 , H04N5/3742
Abstract: The present invention relates to a method for sensing an image sensor including pixels individually connected to column lines and row lines. The method for sensing an image sensor includes a step of connecting a pair of the column lines among a plurality of the column lines by corresponding to switch signals and a step of sensing a first pixel signal determined according to a first signal and a second signal individually outputted from a first pixel and a second pixel connected to each column line.
Abstract translation: 本发明涉及一种用于感测图像传感器的方法，该图像传感器包括单独连接到列线和行线的像素。 用于感测图像传感器的方法包括通过对应于开关信号连接多个列线中的一对列线的步骤，以及分别检测根据第一信号和第二信号确定的第一像素信号的步骤 从连接到每个列线的第一像素和第二像素输出。
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Patent Agency Ranking
公开(公告)号：KR1020140047496A
公开(公告)日：2014-04-22
申请号：KR1020130022844
申请日：2013-03-04
Applicant: 삼성전자주식회사
CPC classification number: H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
Abstract: A semiconductor device according to the present invention includes a plurality of banks; and a control unit which receives a command from an external device and controls the banks individually. Each bank includes a pixel array which includes a plurality of pixels; a row decoder which activates word lines connected to the pixels according to the control of the control unit; a column decoder which activates bit lines connected to the pixels according to the control of the control unit; a sensing amplifier and a writing driver which control the voltages of the activated bit lines; and an input and output buffer which outputs the data states of the pixels based on a change in the amplified voltage. The command includes at least one operation mode information on a bank among the banks. The operation mode information includes image sensor mode or memory mode information.
Abstract translation: 根据本发明的半导体器件包括多个堤; 以及控制单元，其从外部设备接收命令并分别控制所述存储体。 每个存储体包括包括多个像素的像素阵列; 行解码器，其根据控制单元的控制激活连接到像素的字线; 列解码器，其根据控制单元的控制激活连接到像素的位线; 感测放大器和写入驱动器，其控制所激活的位线的电压; 以及输入和输出缓冲器，其基于放大电压的变化来输出像素的数据状态。 该命令包括银行中银行的至少一个操作模式信息。 操作模式信息包括图像传感器模式或存储器模式信息。
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公开(公告)号：KR1020130006182A
公开(公告)日：2013-01-16
申请号：KR1020110068071
申请日：2011-07-08
Applicant: 삼성전자주식회사
CPC classification number: H04N5/3696 , H01L27/14609 , H04N13/30 , H04N5/369
Abstract: PURPOSE: A sensor, a data processing system having the same, and a method for operating the same are provided to make multiple color pixels and multiple deep pixels a single chip. CONSTITUTION: A pixel array deeply includes a depth pixel(Z) and a color pixel(R,G,B). The first signal line group includes the multiple signal lines for supplying multiple first control signals(RG,TG,SEL) for controlling the color pixel. The second signal line group includes the multiple signal lines for supplying multiple second signals(RG1,DG,TG1,SEL1) for controlling the depth pixel.
Abstract translation: 目的：提供一种传感器，具有该传感器的数据处理系统及其操作方法，以使多个彩色像素和多个深度像素成为单个芯片。 构成：像素阵列深深地包括深度像素（Z）和彩色像素（R，G，B）。 第一信号线组包括用于提供用于控制彩色像素的多个第一控制信号（RG，TG，SEL）的多条信号线。 第二信号线组包括用于提供用于控制深度像素的多个第二信号（RG1，DG，TG1，SEL1）的多条信号线。
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公开(公告)号：KR101196795B1
公开(公告)日：2012-11-05
申请号：KR1020070101667
申请日：2007-10-09
Applicant: 삼성전자주식회사
IPC: G01R33/00
CPC classification number: G11B9/02 , B82Y10/00 , G11B9/1409
Abstract: 개시된 전기장 센서는 전기장 센서는, 최상층에 불순물이 고농도로 도핑된 저저항 반도체층이 마련된 기판과, 저저항 반도체층 위의 일부 영역에 위치되며 불순물이 저농도로 도핑된 고저항 반도체층과, 고저항 반도체층 위에 위치되는 도전층을 포함하여, 저저항 반도체층, 고저항 반도체층, 및 도전층을 통하여 흐르는 전류의 변화에 의하여 전기장의 변화를 검출한다.
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49.发明授权
公开(公告)号：KR100909962B1
公开(公告)日：2009-07-29
申请号：KR1020060107484
申请日：2006-11-01
Applicant: 삼성전자주식회사
CPC classification number: G11B9/02
Abstract: Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
Abstract translation: 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，该电场信息读取头包括半导体衬底，该半导体衬底具有形成在面对记录的表面的一端的中心部分中的电阻区域 所述电阻区域轻掺杂杂质，并且在所述电阻区域的两侧形成源极区域和漏极区域，所述源极区域和所述漏极区域比所述电阻区域更高掺杂杂质。 源极区域和漏极区域沿着半导体衬底的面向记录介质的表面延伸，并且电极分别与源极区域和漏极区域电连接。 另外，提供了一种制造电场信息读取头的方法和一种在晶片上批量生产电场信息读取头的方法。
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公开(公告)号：KR100821348B1
公开(公告)日：2008-04-11
申请号：KR1020070011636
申请日：2007-02-05
Applicant: 삼성전자주식회사
IPC: G11B5/127
Abstract: A read/write head structure of an information storage device and a manufacturing method thereof are provided to form an external interconnection pad easily by installing a metal pad electrically connected to a read/write head. A method for manufacturing a read/write head structure of an information storage device comprises the steps of: patterning an etching mask on a silicon wafer; slantly etching the silicon wafer in the sectional direction through dry or wet process using the patterned etching mask; removing the etching mask; forming a read/write head(13) on the upper part of the silicon wafer; forming a metal pad(15) electrically connected with the read/write head on a slant surface(14); and splitting the read/write head by cutting the slant surface of the silicon wafer.
Abstract translation: 提供信息存储装置的读/写头结构及其制造方法，通过安装与读/写头电连接的金属垫，容易地形成外部互连衬垫。 一种用于制造信息存储装置的读/写头结构的方法包括以下步骤：在硅晶片上图案化蚀刻掩模; 使用图案化的蚀刻掩模，通过干法或湿法在横截面方向上倾斜蚀刻硅晶片; 去除蚀刻掩模; 在所述硅晶片的上部形成读/写头（13）; 在倾斜表面（14）上形成与所述读/写头电连接的金属焊盘（15）; 以及通过切割硅晶片的倾斜表面来分割读/写头。
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