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公开(公告)号：KR1020120029652A
公开(公告)日：2012-03-27
申请号：KR1020100091583
申请日：2010-09-17
Applicant: 삼성전자주식회사
CPC classification number: G02F1/01708 , G02F1/0054 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/01725 , G02F1/025 , G02F1/2257 , G02F2202/10 , G02B6/1221 , G02B6/1347
Abstract: PURPOSE: An optoelectronic device, a manufacturing method thereof and a light modulator including the same are provided to simplify manufacturing process by forming an optical guide core region and a plurality of slabs at the same. CONSTITUTION: A p-doped region(122) and an n-doped region(124) are formed within a semiconductor substrate. An optical guide core region is formed between the p-doped region and the n-doped region. A plurality of first slabs(114) is formed between the optical guide core region and the p-doped region. A plurality of second slabs(118) is formed between the optical guide core region and the n-doped region. The thickness of the plurality of second slabs is same with the thickness of the optical guide core region.
Abstract translation: 目的：提供一种光电子器件及其制造方法和包括该光电子器件的光调制器，以通过形成光导芯区域和多个板坯来简化制造工艺。 构成：在半导体衬底内形成p掺杂区（122）和n掺杂区（124）。 在p掺杂区域和n掺杂区域之间形成光导纤芯区域。 在光导纤芯区域和p掺杂区域之间形成多个第一板坯（114）。 在光导纤芯区域和n掺杂区域之间形成多个第二板坯（118）。 多个第二板的厚度与导光芯区域的厚度相同。
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公开(公告)号：KR1020120011117A
公开(公告)日：2012-02-07
申请号：KR1020100072688
申请日：2010-07-28
Applicant: 삼성전자주식회사
IPC: H01L31/10
CPC classification number: G02B6/12004 , G02B6/132 , G02B6/136 , H01L31/02327 , H01L31/103 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
Abstract: PURPOSE: A method for forming a photodetector structure is provided to obtain a germanium layer having impoved optical absorption by using bulk silicon as a crystallization seed for a germanium layer. CONSTITUTION: A structural layer filling a cladding material is formed inside a trench(S110). A monocrystalline silicon layer is formed at an upper part of a structural layer(S120). The monocrystalline silicon layer is etched(S130). A first insulation layer is formed on a top portion of the monocrystalline silicon layer(S140). A part of the first insulation layer is etched(S150). A germanium layer is formed at the upper part of the first insulation layer(S160). An electrode is connected to the germanium layer(S170).
Abstract translation: 目的：提供一种形成光检测器结构的方法，通过使用体硅作为锗层的结晶种子来获得具有光吸收的锗层。 构成：在沟槽内形成填充包层材料的结构层（S110）。 在结构层的上部形成单晶硅层（S120）。 蚀刻单晶硅层（S130）。 第一绝缘层形成在单晶硅层的顶部（S140）上。 蚀刻第一绝缘层的一部分（S150）。 锗层形成在第一绝缘层的上部（S160）。 电极连接到锗层（S170）。
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公开(公告)号：KR1020090127047A
公开(公告)日：2009-12-09
申请号：KR1020090029057
申请日：2009-04-03
Applicant: 삼성전자주식회사
IPC: G02B6/42
Abstract: PURPOSE: A semiconductor device is provided to rapidly transmit data without loss or damage to the data by arranging at least one or more photoelectric modules between a central processing unit and a memory module. CONSTITUTION: A memory module is connected to a memory controller(10), and is mounted to a corresponding to socket. A first photoelectric module(12) is connected to the memory controller. One side of an optical channel is connected to the first photoelectric module. The other side of the optical channel is extended via the socket. At least one part of elements is mounted to a system board(8). A second photoelectric module is mounted to the socket, and is positioned between the optical channel and the memory module.
Abstract translation: 目的：提供一种半导体器件，用于通过在中央处理单元和存储器模块之间布置至少一个或多个光电模块来快速传输数据而不损失或损坏数据。 构成：存储器模块连接到存储器控制器（10），并被安装到相应的插座上。 第一光电模块（12）连接到存储器控制器。 光通道的一侧连接到第一光电模块。 光通道的另一侧通过插座延伸。 至少一部分元件安装到系统板（8）上。 第二光电模块安装到插座上，并且位于光通道和存储器模块之间。
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公开(公告)号：KR1020090067548A
公开(公告)日：2009-06-25
申请号：KR1020070135240
申请日：2007-12-21
Applicant: 삼성전자주식회사
Abstract: A signal distribution network having an optical directional coupler is provided to transmit an optical signal without the loss of the power by selecting one output unit among a plurality of output units. A signal distribution network(100) having an optical directional coupler includes one input unit(110) and a plurality of output units. A plurality of output units include a main output unit(130) and a plurality of sub output units(140). The main optical wave guide is connected between the input unit and the main output unit. The plurality of sub output units are arranged between the input unit and the main output unit. A plurality of optical directional couplers(160) selectively output the optical signal inputted to the input unit to a sub output unit. The optical directional coupler includes a sub optical wave guide, a first electrode, and a second electrode. The sub optical wave guide includes a parallel part adjacent to the main optical wave guide in a predetermined region.
Abstract translation: 提供具有光学定向耦合器的信号分配网络，以通过在多个输出单元中选择一个输出单元来传输光信号而不损失功率。 具有光学定向耦合器的信号分配网络（100）包括一个输入单元（110）和多个输出单元。 多个输出单元包括主输出单元（130）和多个子输出单元（140）。 主光波导连接在输入单元和主输出单元之间。 多个子输出单元布置在输入单元和主输出单元之间。 多个光学定向耦合器（160）选择性地将输入到输入单元的光信号输出到子输出单元。 光学定向耦合器包括副光波导，第一电极和第二电极。 副光波导包括在预定区域中与主光波导相邻的平行部分。
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公开(公告)号：KR1020080020312A
公开(公告)日：2008-03-05
申请号：KR1020060083653
申请日：2006-08-31
Applicant: 삼성전자주식회사
IPC: G02F1/1335
CPC classification number: G02B6/0056 , G02F1/133617
Abstract: A photo-luminescence LCD is provided to minimize light loss by a polarization plate without installing the special polarization plate in the rear of a light controller and using polarized light. A photo-luminescence LCD(Liquid Crystal Display) comprises the followings. A light source(10) emits polarized light. A light controller(50) includes plural pixel areas and an LC layer(53). The LC layer independently modulates the polarized light, emitted from the light source, at each pixel area. A polarization plate(60) passes only light polarized(s) in a predetermined direction among the light modulated in the light controller. A light emitting layer emits photo-luminescence by being excited by the light passing the polarization plate.
Abstract translation: 提供了一种光致发光液晶显示器，以最小化偏振板的光损耗，而不需要在光控制器的后部安装特殊的偏光板并使用偏振光。 光致发光液晶显示器（Liquid Crystal Display）包括如下。 光源（10）发射偏振光。 光控制器（50）包括多个像素区域和LC层（53）。 LC层在每个像素区域独立地调制从光源发射的偏振光。 偏振板（60）仅在光控制器中调制的光中仅沿预定方向通过偏振光。 发光层通过被偏振板通过的光激发而发光。
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Patent Agency Ranking
公开(公告)号：KR1020080018680A
公开(公告)日：2008-02-28
申请号：KR1020060081173
申请日：2006-08-25
Applicant: 삼성전자주식회사
IPC: H01S5/00
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/22 , H01S5/3063 , H01S2301/173 , H01S2304/12
Abstract: A semiconductor laser diode having a wafer-bonding structure and a method of fabricating the same are provided to suppress lattice defects due to differences in growth temperature and strain by fabricating first and second semiconductor layers separately. A semiconductor laser diode having a wafer-bonding structure includes a first semiconductor layer(190) and a second semiconductor layer(291). The first semiconductor layer is stacked on a first substrate(110) and emits light. The second semiconductor layer guides the emitted light. The first and second semiconductor layers are bonded to each other by wafer-bonding. The second semiconductor layer has a ridge waveguide structure or a gain guide structure. The first semiconductor layer has a first clad layer(140), a first waveguide layer(150), an active layer(160), a second waveguide layer(170), and a first bonding layer(180), which are sequentially stacked on the first substrate. The second semiconductor layer has a second bonding layer(270) bonded to the first bonding layer, and a second clad layer stacked on the second bonding layer.
Abstract translation: 提供具有晶片接合结构的半导体激光二极管及其制造方法，以通过分开制造第一和第二半导体层来抑制由于生长温度和应变的差异引起的晶格缺陷。 具有晶片接合结构的半导体激光二极管包括第一半导体层（190）和第二半导体层（291）。 第一半导体层堆叠在第一基板（110）上并发光。 第二半导体层引导发射的光。 第一和第二半导体层通过晶片接合彼此接合。 第二半导体层具有脊波导结构或增益引导结构。 第一半导体层具有第一覆层（140），第一波导层（150），有源层（160），第二波导层（170）和第一接合层（180） 第一个底物。 第二半导体层具有接合到第一接合层的第二接合层（270）和层叠在第二接合层上的第二覆层。
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公开(公告)号：KR100773555B1
公开(公告)日：2007-11-06
申请号：KR1020060068410
申请日：2006-07-21
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L21/02647 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02469 , H01L21/02516 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02609 , H01L21/02642 , H01L21/02645
Abstract: A semiconductor substrate having low defects and a manufacturing method thereof are provided to improve a light output property of a light emitting device formed on a semiconductor device by lowering defect density. A first semiconductor layer(12) is made of Group III-V semiconductor material, of which an amorphous region(12b) and a crystalline region(12a) are formed on an upper surface. A second semiconductor layer(20) is formed on the first semiconductor layer, and is grown from the crystalline region. The second semiconductor layer has a vertical growth region(20a) grown from the crystalline region and a lateral growth region(20b) grown laterally from the vertical growth region.
Abstract translation: 提供具有低缺陷的半导体衬底及其制造方法，以通过降低缺陷密度来改善形成在半导体器件上的发光器件的光输出特性。 第一半导体层（12）由III-V族半导体材料制成，在上表面上形成非晶区域（12b）和结晶区域（12a）。 第二半导体层（20）形成在第一半导体层上，并从结晶区域生长。 第二半导体层具有从结晶区域生长的垂直生长区域（20a）和从垂直生长区域横向生长的横向生长区域（20b）。
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公开(公告)号：KR1020050017685A
公开(公告)日：2005-02-23
申请号：KR1020030053889
申请日：2003-08-04
Applicant: 삼성전자주식회사
IPC: H01S3/0941 , B82Y40/00
CPC classification number: H01L33/04 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/06 , H01L33/32 , H01S2301/173
Abstract: PURPOSE: A semiconductor device having a super lattice structure semiconductor layer and its fabrication method are provided to reduce series resistance without reducing optical confinement. CONSTITUTION: The semiconductor device includes a super lattice structure semiconductor layer stacked with the first material layer(581) and the second material layer(582) in turn. A number of holes(581a,582a) are formed in each of the first and the second material layer, and each hole of the corresponding material layer is filled with a material of other adjacent material layer. The super lattice structure is a p-type semiconductor layer, and has a structure of GaN/AlGaN.
Abstract translation: 目的：提供具有超晶格结构半导体层的半导体器件及其制造方法，以减少串联电阻而不减少光学限制。 构成：半导体器件包括依次与第一材料层（581）和第二材料层（582）堆叠的超晶格结构半导体层。 在第一和第二材料层的每一个中形成有多个孔（581a，582a），并且相应材料层的每个孔都填充有相邻材料层的材料。 超晶格结构是p型半导体层，并且具有GaN / AlGaN的结构。
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公开(公告)号：KR101645256B1
公开(公告)日：2016-08-03
申请号：KR1020090119107
申请日：2009-12-03
Applicant: 삼성전자주식회사
Abstract: 광도파로소자를제공한다. 광도파로소자는벌크실리콘웨이퍼와, 벌크실리콘웨이퍼의일부분에형성된트랜치영역과, 트랜치영역내에형성된하부클래드층과, 트랜치영역의일측벽으로부터떨어져하부클래드층상에형성된광도파로코아층과, 광도파로코아층을덮도록형성된상부클래드층을포함한다. 하부클래드층은트랜치영역에완전히매립되어구성된다. 광도파로코아층은광 누설손실이 10dB/mm 기준일때 다음식을만족하도록상기트랜치영역의일측벽으로부터떨어져형성된다. 식은 0.15㎛
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