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公开(公告)号：KR1020140070754A
公开(公告)日：2014-06-11
申请号：KR1020120134863
申请日：2012-11-26
Applicant: 삼성전자주식회사
CPC classification number: G06F1/187 , G06F1/203 , G11B2220/60 , G11C5/00 , G11C5/02 , G11C5/025 , H05K7/20445 , G06F1/16 , G06F1/20 , H05K7/20
Abstract: The present invention relates to an auxiliary memory device. More specifically, the provided auxiliary memory device includes: a substrate which includes a first area with a first semiconductor device mounted on and a second area with a second semiconductor mounted on; and a housing which can store at least a part of the substrate. The housing includes a first sub-housing covering the first area, and the first sub-housing passes the upper portion of the first semiconductor device and extends to the second area. The auxiliary memory device can ensure a device vulnerable to heat to be able to perform without being affected by heat to enhance the overall performance of the auxiliary memory device.
Abstract translation: 辅助存储装置技术领域本发明涉及辅助存储装置。 更具体地，所提供的辅助存储器件包括：衬底，其包括安装有第一半导体器件的第一区域和安装有第二半导体的第二区域; 以及可以存储至少一部分基板的壳体。 壳体包括覆盖第一区域的第一副壳体，并且第一子壳体通过第一半导体器件的上部并延伸到第二区域。 辅助存储装置可以确保易受热的装置能够执行而不受热的影响，以增强辅助存储装置的整体性能。
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公开(公告)号：KR1020130129102A
公开(公告)日：2013-11-27
申请号：KR1020130050080
申请日：2013-05-03
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L33/145 , H01L33/405 , H01L33/42
Abstract: The present invention relates to a semiconductor light emitting device comprising a light emitting structure in which a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially arranged; first and second electrodes in which the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are electrically connected. The second electrode comprises a pad reflection unit which is formed on one area among top surfaces of the second conductivity type semiconductor layer are; an opening unit which surrounds the pad reflection unit within a range beyond out of the pad reflection unit; a transparent electrode layer which is formed on the second conductivity type semiconductor layer; a finger reflection unit which is extended and formed on the pad reflection unit and partly formed on the transparent electrode layer; a pad electron unit which covers the pad reflection unit and touches the transparent electrode layer; an electron unit which covers the finger reflection unit and touches the transparent electrode layer. The semiconductor light emitting device of the present invention improves its light extraction efficiency .
Abstract translation: 本发明涉及一种包括发光结构的半导体发光器件，其中第一导电类型半导体层和第二导电类型半导体层依次布置; 第一和第二电极，其中第一导电类型半导体层和第二导电类型半导体层电连接。 第二电极包括形成在第二导电类型半导体层的顶表面之间的一个区域上的焊盘反射单元; 打开单元，其在超出所述衬垫反射单元的范围内围绕所述衬垫反射单元; 形成在第二导电型半导体层上的透明电极层; 手指反射单元，其延伸并形成在所述垫反射单元上并部分地形成在所述透明电极层上; 覆盖所述焊盘反射单元并接触所述透明电极层的焊盘电子单元; 覆盖手指反射单元并接触透明电极层的电子单元。 本发明的半导体发光器件提高其光提取效率。
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公开(公告)号：KR101097914B1
公开(公告)日：2011-12-23
申请号：KR1020040033083
申请日：2004-05-11
Applicant: 삼성전자주식회사
IPC: H03K19/00
CPC classification number: G09G3/3688 , H03F3/005 , H03F3/505
Abstract: 고계조표현이가능하고, 고해상도를구현할수 있는아날로그버퍼및 이를갖는표시장치, 아날로그버퍼의구동방법이개시된다. 비교기는아날로그버퍼에입력되는입력전압과부하로출력되는아날로그전압을비교하고, 제1 트랜지스터는비교기의비교결과에따라아날로그전압이입력전압보다작은경우턴온되고, 아날로그전압과입력전압이동일해지는시점에턴오프되며, 제2 트랜지스터는비교기의비교결과에따라아날로그전압이입력전압보다큰 경우턴온되고, 아날로그전압과입력전압이동일해지는시점에턴오프된다. 따라서, 비교기의출력에따라제1 및제2 트랜지스터가구동되므로, 공정변화에따라부하에출력되는아날로그전압의변화를최소화시킬수 있다.
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公开(公告)号：KR100827149B1
公开(公告)日：2008-05-02
申请号：KR1020060120656
申请日：2006-12-01
Applicant: 삼성전자주식회사
Inventor： 최진영
IPC: H04B1/40
CPC classification number: H04M19/041 , H04M1/72552
Abstract: A method for notifying of call reception in a portable terminal is provided to distinguish a bell sound outputted from a user's portable terminal from a bell sound outputted from another portable terminal to offer information on the distinguished bell sounds, thereby preventing the user from misunderstanding that a call is received for the user. When a call is received, a portable terminal confirms a mode which notifies of the call reception, and if the mode is a bell sound mode, the terminal outputs a bell sound corresponding to the call reception(S201,S202). The terminal confirms whether the same bell sound as the outputted bell sound is outputted from another portable terminal around a user's portable terminal(S205~S207). If not, the terminal outputs an announcement message which notifies that the call is received for the user(S208).
Abstract translation: 提供一种用于在便携式终端中通知呼叫接收的方法，以将从用户的便携式终端输出的铃声与从另一便携式终端输出的铃声区分开来，以提供关于不同铃声的信息，从而防止用户误解 为用户收到呼叫。 当接收到呼叫时，便携式终端确认通知呼叫接收的模式，并且如果该模式是铃声模式，则终端输出与呼叫接收相对应的铃声（S201，S202）。 终端确认是否从用户便携式终端周围的另一个便携式终端输出与输出的铃声相同的铃声（S205〜S207）。 如果不是，终端输出通知用户接收到呼叫的通知消息（S208）。
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公开(公告)号：KR1020080024278A
公开(公告)日：2008-03-18
申请号：KR1020060088430
申请日：2006-09-13
Applicant: 삼성전자주식회사
IPC: G02F1/133
CPC classification number: G02F1/1362 , G02F2001/133388 , G02F2001/13606 , G09G3/3611 , G09G3/3648 , G09G2300/0413 , G09G2300/0426 , G09G2310/0232 , G09G2320/0209 , G09G2320/0233
Abstract: A thin film transistor substrate and an LCD comprising the same are provided to reduce the brightness difference due to a difference of coupling capacity between the outermost data line adjacent to a peripheral area and one of data lines in a display area, by forming a dummy data line between the outermost data line and the peripheral area. An insulating substrate has a display area and a peripheral area. A plurality of gate lines(121) is formed on the insulating substrate. A plurality of data lines(171) crosses the gate lines to define a plurality of pixel regions within the display area. A pixel electrode is formed in each of the pixel regions. A dummy data line(1711) crosses the gate lines to define a plurality of dummy pixel regions within the peripheral area. A dummy pixel electrode(1900) is formed in each of the dummy pixel regions. Thin film transistors are formed in the pixel regions and the dummy pixel regions, respectively. The dummy pixel electrode is wider than the pixel electrode.
Abstract translation: 提供薄膜晶体管基板和包括该薄膜晶体管基板的LCD，以通过形成虚拟数据来减少由于与外围区域相邻的最外层数据线与显示区域中的数据线之间的耦合容量的差异引起的亮度差异 最外层数据线与外围区域之间的线。 绝缘基板具有显示区域和周边区域。 多个栅极线（121）形成在绝缘基板上。 多个数据线（171）与栅极线交叉以在显示区域内限定多个像素区域。 像素电极形成在每个像素区域中。 虚拟数据线（1711）与栅极线交叉以在周边区域内限定多个虚拟像素区域。 虚拟像素电极（1900）形成在每个虚拟像素区域中。 薄膜晶体管分别形成在像素区域和虚拟像素区域中。 虚拟像素电极比像素电极宽。
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Patent Agency Ranking
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公开(公告)号：KR1019930024017A
公开(公告)日：1993-12-21
申请号：KR1019920009412
申请日：1992-05-30
Applicant: 삼성전자주식회사
IPC: G11C11/407
Abstract: 본 발명은 반도체 메모리 장치에서 특히 칩 외부에서 공급되는 전원을 소정레벨로 강하하여 출력하는 내부전원전압 발생회로에 관한 것으로, 내부전원전압 발생회로의 출력용 드라이버단을 번-인모드 드라이버(410)와 노멀 드라이버(420)로 분리하여 구성하므로서, 내부전원전압 발생회로의 출력단에 전압강하를 고속으로 보상할 수 있고, 또한 안정한 내부전원전압을 공급하여 칩의 동작 특성을 향상시키는 효과가 있다.
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公开(公告)号：KR1020170077208A
公开(公告)日：2017-07-05
申请号：KR1020177014664
申请日：2015-10-28
Applicant: 삼성전자주식회사 , 삼성메디슨 주식회사
IPC: A61B8/00 , A61B8/08 , G01S7/52 , G06F19/00 , G06F3/0484
CPC classification number: A61B8/465 , A61B8/14 , A61B8/4438 , A61B8/4444 , A61B8/463 , A61B8/464 , A61B8/467 , A61B8/469 , A61B8/5207 , A61B8/5223 , A61B8/523 , A61B8/54 , A61B8/565 , G01S7/52033 , G01S7/52074 , G01S7/52084 , G01S7/52098 , G06F3/0482 , G06F3/04842 , G06F3/04847 , G06F3/0488 , G01S7/52073 , G16H40/63
Abstract: 대상체에대한초음파영상데이터를획득하는단계; 획득된초음파영상데이터의이득값을설정하기위한이득설정창을화면의제 1 영역에표시하는단계; 이득설정창을통해사용자로부터이득값을설정받는단계; 및설정된이득값이적용된대상체에대한초음파영상을화면의제 2 영역에표시하는단계를포함하는것을특징으로하는초음파장치의정보제공방법을개시한다.
Abstract translation: 获取目标物体的超声图像数据; 在屏幕的第一区域显示用于设置所获取的超声图像数据的增益值的增益设置窗口; 通过增益设置窗口从用户设置增益值; 并且将设置了增益值的对象的超声波图像显示在屏幕的第二区域上。
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公开(公告)号：KR1020150035656A
公开(公告)日：2015-04-07
申请号：KR1020130115674
申请日：2013-09-27
Applicant: 삼성전자주식회사
CPC classification number: H01L27/15 , H01L25/167 , H01L33/382 , H01L2924/0002 , H01L2924/00
Abstract: 본발명의실시형태에따른반도체발광소자는, 기판; 기판상에배치되고, 제1 n형반도체층, 제1 활성층및 제1 p형반도체층을구비하는제1 구조물; 기판상에서제1 구조물과이격되어배치되고, 제2 n형반도체층, 제2 활성층및 제2 p형반도체층을구비하는제2 구조물; 제1 n형반도체층및 제1 p형반도체층에각각접속되는제1 n 전극및 제1 p 전극; 및제2 n형반도체층및 제2 p형반도체층에각각접속되는제2 n 전극및 제2 p 전극을포함하고, 제2 n 전극또는제2 p 전극은제2 활성층으로부터소정거리만큼이격되어제2 활성층을둘러싸도록배치된다.
Abstract translation: 根据本发明实施例的半导体发光器件包括：衬底; 布置在基板上的第一结构，包括第一n型半导体层，第一有源层和第一p型半导体层; 第二结构，与基板上的第一结构分离，并且包括第二n型半导体层，第二有源层和第二p型半导体层; 分别连接到第一n型半导体层和第一p型半导体层的第一n电极和第一p电极; 以及分别连接到第二n型半导体层和第二p型半导体层的第二n电极和第二p电极。 第二n电极或第二p电极以预定距离与第二有源层分离并且围绕第二有源层。
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