公开(公告)号：US12155019B2

公开(公告)日：2024-11-26

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US11757077B2

公开(公告)日：2023-09-12

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US10418513B2

公开(公告)日：2019-09-17

申请号：US16143573

申请日：2018-09-27

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/62 ,  H01L33/22 ,  H01L33/20 ,  H01L21/784 ,  H01L21/78

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US09893231B2

公开(公告)日：2018-02-13

申请号：US15475817

申请日：2017-03-31

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/62 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.

公开(公告)号：US09876146B2

公开(公告)日：2018-01-23

申请号：US15256263

申请日：2016-09-02

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai Ko ,  Schang-Jing Hon ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  An-Ju Lin ,  Chien-Fu Shen ,  Chen Ou

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

公开(公告)号：US09876139B2

公开(公告)日：2018-01-23

申请号：US15345185

申请日：2016-11-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

公开(公告)号：US09608162B2

公开(公告)日：2017-03-28

申请号：US14997258

申请日：2016-01-15

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chiu-Lin Yao

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface; wherein one of the plurality of patterned units has a vertex, a first inclined surface, and a second inclined surface, and the first inclined surface and the second inclined surface commonly join at the vertex from a cross-sectional view of the light-emitting device.

公开(公告)号：US20150349210A1

公开(公告)日：2015-12-03

申请号：US14825899

申请日：2015-08-13

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Abstract translation: 发光二极管结构包括第一半导体层; 第一半导体层下面的第二半导体层; 在所述第一半导体层和所述第二半导体层之间的用于发光的发光层; 用于引线接合的第一半导体层上的第一电焊盘; 连接到第一电焊盘的第一延伸部; 以及覆盖所述第一延伸部并暴露所述第一电焊盘的第一反射层，其中所述第一电焊盘和所述第一延伸部具有相同的厚度，并且所述第一反射层的反射率高于所述第一延伸部的反射率。

公开(公告)号：US09112117B2

公开(公告)日：2015-08-18

申请号：US13836681

申请日：2013-03-15

Applicant: EPISTAR CORPORATION

Inventor： Chia-Liang Hsu ,  Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Ting-Chia Ko ,  Po-Shun Chiu

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Abstract translation: 一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层 半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光 半导体堆叠

公开(公告)号：US08866174B2

公开(公告)日：2014-10-21

申请号：US13772149

申请日：2013-02-20

Applicant: Epistar Corporation

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao Hsing Chen

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/38 ,  H01L33/10

CPC classification number: H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.

Abstract translation: 提供具有第一导电型半导体层的发光层叠层的发光装置。 在第一导电型半导体层上形成发光层。 在发光层上形成第二导电型半导体层。 第二导电类型半导体层的上表面是纹理表面。 在第二导电型半导体层的第一部分上形成平坦化层。 透明导电氧化物层形成在平坦化层和第二导电类型半导体层的第二部分上，包括平坦化层上的第一部分和在第二导电类型半导体层上具有第一多个空腔的第二部分。 在透明导电氧化物层的第一部分上形成电极，并且在透明导电氧化物层和电极之间形成反射金属层。