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    METHOD FOR MAKING MULTILAYER DEVICES USING ONLY A SINGLE CRITICAL MASKING STEP
    44.
    发明专利
    METHOD FOR MAKING MULTILAYER DEVICES USING ONLY A SINGLE CRITICAL MASKING STEP 未知

    公开(公告)号：CA1071761A

    公开(公告)日：1980-02-12

    申请号：CA246915

    申请日：1976-03-02

    Applicant: IBM

    Inventor： AHN KIE Y ,  HATZAKIS MICHAEL ,  POWERS JOHN V

    IPC: G11C11/14 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H01L21/3205 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38

    Abstract: A method for making multilayer devices, such as magnetic bubble domain devices, which are comprised of a plurality of layers that are deposited using only a single critical masking step. A first metallic layer is deposited on a substrate including a magnetic bubble domain film, which may or may not have a nonmagnetic material thereon. A first resist layer is then applied, selectively exposed, and developed to expose at least two areas of the first metallic film. A thicker metallic layer is then deposited in the exposed areas, or is electroplated. After this, another resist layer is applied without deforming the pattern in the first layer, selectively exposed, and developed to protect certain areas of the thick metallic layer from subsequent formation of another metallic layer. During this subsequent formation, a second metallic film is formed using the first resist layer as a mask. After this, the resists are removed and the now uncovered portions of the original thin metallic layer are etched away. In a particular embodiment, a magnetic bubble domain chip is provided in which the second resist layer is used to protect the sensor region of the chip. The second resist layer need not be critically aligned as it only functions as a protect mask. Exposure and development of the second resist layer does not adversely affect the underlying metal layers.

    ETCHING FILM MATERIALS
    49.
    发明专利
    ETCHING FILM MATERIALS 未知

    公开(公告)号：GB1276076A

    公开(公告)日：1972-06-01

    申请号：GB1362271

    申请日：1971-05-07

    Applicant: IBM

    Inventor： HATZAKIS MICHAEL

    IPC: H01L21/00 ,  H01L21/263 ,  H01L49/02

    Abstract: 1276076 Etching INTERNATIONAL BUSINESS MACHINES CORP 7 May 1971 [12 June 1970] 13622/71 Heading B6J A method of etching a film, e.g. of metal or metal oxide, having different thicknesses, comprises coating the film with a photoresist, exposing selected areas of the photoresist to radiation, e.g. to light or an electron beam, so that an area over a relatively thick portion is exposed to more radiation than an area or areas over a relatively less thick portion or portions of the film, developing the photoresist until the film is uncovered in the area over the relatively thick portion of the film, etching to remove material of the film in the uncovered area and repeating the developing and etching in respect of the area or areas of successively less thick film. Exposure of the photoresist may be by an electron beam of varying intensity depending upon the film thickness, or by a beam for longer or shorter periods of time, a mask being utilized to vary time of exposure.

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