公开(公告)号：DE10131490A1

公开(公告)日：2003-01-16

申请号：DE10131490

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENKE MATTHIAS ,  BRUCHHAUS RAINER ,  ENDERS GERHARD ,  HARTNER WALTER ,  MIKOLAJICK THOMAS ,  NAGEL NICOLAS ,  ROEHNER MICHAEL

IPC: H01L21/02 ,  H01L21/8242 ,  H01L21/8239

Abstract: Production of capacitor arrangement comprises: removing lower layer (14) of a sequence of layers (14, 16) formed in surface region (20a) of semiconductor substrate (20) or passivating region (21) outside a region of predefined sites (K2) up to a reduced layer thickness (d); forming raised region (E) of lower layer; and forming subsequent layer (16) on lower layer, especially in the raised region. Preferred Features: The lower layer is removed by local deposition and/or local formation of a mask in the region of the predefined sites on the lower layer and by etching in the region of the mask. The layers of the layer sequence are applied in a common process step on the surface region of the substrate or on the passivating region, and then etched in a common process step and/or structured and/or after tempering.

公开(公告)号：WO0199181A2

公开(公告)日：2001-12-27

申请号：PCT/US0119241

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： RAMACHANDRAN RAVIKUMAR ,  NAGEL NICOLAS ,  PARKS CHRISTOPHER

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8242

CPC classification number: H01L21/76849 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76861 ,  H01L21/7687 ,  H01L27/10855

Abstract: A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.

Abstract translation: 根据本发明的用于清洁氧化的扩散阻挡层的方法包括提供用于防止氧和金属扩散的导电扩散阻挡层（26），并提供包括氢氟酸的湿化学蚀刻剂（湿蚀刻）。 用湿化学蚀刻剂蚀刻扩散阻挡层（26），以从扩散阻挡层去除氧化物，使得通过使用湿式化学蚀刻剂，通过扩散阻挡层实现线性电性能。

公开(公告)号：DE60122872T2

公开(公告)日：2007-04-19

申请号：DE60122872

申请日：2001-05-02

Applicant: QIMONDA AG ,  IBM

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.