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    A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER
    41.
    发明公开
    A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER 审中-公开
    一种在一层中制造多个通孔的方法

    公开(公告)号：EP3210937A1

    公开(公告)日：2017-08-30

    申请号：EP17158214.1

    申请日：2017-02-27

    Applicant: SmartTip B.V.

    Inventor： SARAJLIC, Edin

    IPC: B81C1/00 ,  A61B5/15

    CPC classification number: B81C1/0015 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150396 ,  A61B5/150511 ,  A61B5/150519 ,  A61B5/150984 ,  A61B5/15142 ,  A61M37/0015 ,  B81B2201/057 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00111 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  C01B21/0687

    Abstract: A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process,
    - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210)
    - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210);
    - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and
    - etching the exposed parts of the first layer using the third layer (240) as a protective layer.

    Abstract translation: 一种在第一材料层中制造多个通孔（132）的方法，例如用于制造包括包含通道的尖端的探针（100）。 为了以间歇工艺制造通孔（132）， - 在包括多个凹坑（210）的晶片（200）上沉积第一材料层 - 在第一材料层上提供第二层，以及 第二层在凹坑（210）的中心位置设置有多个孔; - 当以一定角度沉积第三层（240）时，使用第二层作为阴影掩模，在中心位置处用所述第三材料（240）覆盖第一材料的一部分，以及 - 蚀刻第一层 使用第三层（240）作为保护层。

    PRESSURE SENSOR DIE WITH PROTECTION AGAINST OVER PRESSURE FOR HIGH OVER PRESSURE TO OPERATING SPAN RATIOS
    42.
    发明公开
    PRESSURE SENSOR DIE WITH PROTECTION AGAINST OVER PRESSURE FOR HIGH OVER PRESSURE TO OPERATING SPAN RATIOS 有权
    有保护防压高压操作区比压力传感器

    公开(公告)号：EP3176557A1

    公开(公告)日：2017-06-07

    申请号：EP16198301.0

    申请日：2016-11-10

    Applicant: Honeywell International Inc.

    Inventor： BROWN, Gregory C.

    IPC: G01L19/06 ,  G01L9/00

    CPC classification number: B81B3/0051 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/0118 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055 ,  G01L19/0618

    Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

    Abstract translation: 的压力传感器，所述组件包括具有第一表面，第一表面上的止动结构，以及耦合到所述第一表面上的膜片构造的基底基板。 该膜结构体包括具有空腔部，其包括第一腔和围绕所述第一空腔的第二腔的第一侧; 具有第一厚度和通过所述第一腔体限定的压力感测膜片部; 和在超压膜片部分具有第二厚度和第二腔，所述第二厚度比所述第一厚度更大的限定。 当在过压的应用，至少一些所述压力传感膜片部分的面积被偏转并通过止挡结构支撑。 作为过压增加时，超压隔膜部偏转并接合与所述第一表面的搜索没有被偏转，并通过止动结构支撑的压力传感膜片部分的附加区域。

    METHOD FOR MANUFACTURING SUBSTRATE HAVING MICROPORE, AND SUBSTRATE
    43.
    发明公开
    METHOD FOR MANUFACTURING SUBSTRATE HAVING MICROPORE, AND SUBSTRATE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES SUBSTRATS MIT MIKROPOREN UND SUBSTRAT

    公开(公告)号：EP2656961A1

    公开(公告)日：2013-10-30

    申请号：EP12744669.8

    申请日：2012-02-01

    Applicant: Fujikura Ltd. ,  The University of Tokyo

    Inventor： NUKAGA Osamu ,  YAMAMOTO Satoshi ,  TABATA Kazuhito ,  SUGIYAMA Masakazu

    IPC: B23K26/36 ,  B23K26/00 ,  B23K26/04 ,  B23K26/40 ,  B81C99/00 ,  C03C15/00 ,  C03C23/00

    CPC classification number: B81C1/00547 ,  B23K26/0054 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

    Abstract translation: 一种制造具有微孔的基体的方法包括：通过用具有脉冲持续时间的第一激光的焦点在基体上进行扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 以及通过蚀刻去除第一改质区域和第三改质区域而形成微孔。

    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES
    44.
    发明公开
    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES 有权
    硅微纳米结构的自由形式的组件

    公开(公告)号：EP2556015A1

    公开(公告)日：2013-02-13

    申请号：EP11766241.1

    申请日：2011-04-05

    Applicant: Niklaus, Frank ,  Fischer, Andreas

    Inventor： Niklaus, Frank ,  Fischer, Andreas

    IPC: B81C99/00 ,  B82Y10/00 ,  B82Y20/00 ,  G01Q90/00 ,  H01L21/20 ,  H01L21/265

    CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

    Abstract: The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).

    Process and system for fabrication of patterns on a surface
    45.
    发明公开
    Process and system for fabrication of patterns on a surface 审中-公开
    Verfahren und System zur Herstellung von Strukturen auf einerOberfläche

    公开(公告)号：EP2144117A1

    公开(公告)日：2010-01-13

    申请号：EP08104722.7

    申请日：2008-07-11

    Applicant: The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin

    Inventor： Cross, Graham L. W. ,  Pethica, John B. ,  McKenzie, Warren

    IPC: G03F7/11 ,  G03F7/00 ,  B81C1/00 ,  H01L21/033

    CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

    Abstract: The invention provides a system and process of patterning structures on a surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to an oxygen plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    Abstract translation: 本发明提供了一种在表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料性质被修改以在表面上提供掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 本发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面去除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，使得暴露的区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于氧等离子体蚀刻之后产生这种图案。 本发明特别适合于直到纳米级尺寸的清晰明确定义的结构的图案化。

    High resolution plasma etch
    47.
    发明公开
    High resolution plasma etch 审中-公开
    HochauflösendePlasmaätzung

    公开(公告)号：EP2006249A2

    公开(公告)日：2008-12-24

    申请号：EP08158646.3

    申请日：2008-06-20

    Applicant: FEI COMPANY

    Inventor： Toth, Milos ,  Smith, Noel

    IPC: B81C1/00

    CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

    Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

    Abstract translation: 应用一种制造微结构的方法，该方法使用光束过程，例如光束诱导的前体分解，以精确图案沉积掩模，然后选择性等离子束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且使用选择性等离子体束蚀刻工艺二次蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对选择的等离子体束工艺进行。

    A MICROELECTROMECHANICAL DEVICE HAVING A STIFFENED SUPPORT BEAM, AND METHODS OF FORMING STIFFENED SUPPORT BEAMS IN MEMS
    49.
    发明公开
    A MICROELECTROMECHANICAL DEVICE HAVING A STIFFENED SUPPORT BEAM, AND METHODS OF FORMING STIFFENED SUPPORT BEAMS IN MEMS 审中-公开
    具有支撑臂微机电元件僵硬及其制备方法加固支撑臂在MEMS

    公开(公告)号：EP1429991A2

    公开(公告)日：2004-06-23

    申请号：EP02756932.6

    申请日：2002-08-02

    Applicant: Hewlett-Packard Company

    Inventor： IVES, Thomas W,

    IPC: B81B3/00

    CPC classification number: G01P15/08 ,  B81B3/007 ,  B81B2201/0235 ,  B81C2201/0143 ,  G01P2015/0817

    Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

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