公开(公告)号：KR1020090129444A

公开(公告)日：2009-12-16

申请号：KR1020097020116

申请日：2008-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하라마사미치 ,  고미아츠시 ,  요코야마오사무 ,  다나카도시마사 ,  마에카와신지 ,  다가사토시

IPC: H01L21/205 ,  C23C16/455

CPC classification number: C23C16/4481 ,  C23C16/52

Abstract: A gas supply method in which a solid raw material in a raw material container is heated and vaporized to produce raw material gas to be supplied to a consuming area. The gas supply method has a step (a) of causing carrier gas to flow to a processing gas supply path that communicates with the consuming area and measuring gas pressure in the processing gas supply path; a step (b) of heating the solid raw material contained in the raw material container to produce the raw material gas; a step (c) of supplying carrier gas which has the same flow rate as the carrier gas in the step (a) to the raw material container and measuring gas pressure in the processing gas supply path while causing the raw material gas together with the carrier gas to flow to the processing gas supply path; and a step (d) of calculating the flow rate of the raw material gas based on the pressure measurement value obtained in the step (a), the pressure measurement value obtained in the step (c), and the flow rate of the carrier gas.

Abstract translation: 将原料容器内的固体原料加热蒸发以产生供给到消耗区域的原料气体的气体供给方法。 气体供给方法具有使载气流入与消耗区域连通的处理气体供给路径并测量处理气体供给路径中的气体压力的步骤（a） （b）加热包含在原料容器中的固体原料以生产原料气体; 将与步骤（a）中的载气相同流量的载气供给到原料容器并测量处理气体供给路径中的气体压力同时使原料气体与载体一起的步骤（c） 气体流到处理气体供应路径; 以及步骤（d），其基于步骤（a）中获得的压力测量值，步骤（c）中获得的压力测量值和载气的流量来计算原料气体的流量 。

公开(公告)号：KR1020080106572A

公开(公告)日：2008-12-08

申请号：KR1020087024696

申请日：2008-02-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고미아츠시 ,  미즈사와야스시 ,  하타노다츠오 ,  하라마사미치 ,  요코야마오사무 ,  다가사토시

IPC: C23C16/16 ,  C23C16/00

CPC classification number: C23C16/16 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/28562 ,  H01L21/76873

Abstract: A method of forming a film, comprising feeding vapor-phase molecules of a metallic carbonyl material onto a surface of substrate to be treated and decomposing them in the vicinity of the surface of substrate to be treated so as to deposit a metal film on the substrate surface, wherein in the deposition of metal layer on the surface of substrate to be treated, there is provided an operation for preferential decomposition of the metallic carbonyl material in an area adjacent to the peripheral portion of the substrate to thereby, in the vicinity of the peripheral portion of the substrate, locally increase the CO concentration of the atmosphere and suppress the deposition of metal film on the peripheral portion. ® KIPO & WIPO 2009

Abstract translation: 一种形成膜的方法，包括将金属羰基材料的气相分子进料到待处理的基板的表面上并在待处理的基板的表面附近分解，以便在基板上沉积金属膜 表面，其中在金属层沉积在待处理的基板的表面上时，提供了在与基板的周边部分相邻的区域中优选分解金属羰基材料的操作，从而在 衬底的周边部分局部地增加大气的CO浓度，并抑制金属膜在周边部分上的沉积。 ®KIPO＆WIPO 2009

公开(公告)号：KR1020080052956A

公开(公告)日：2008-06-12

申请号：KR1020060124784

申请日：2006-12-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 리이쳉 ,  이시자카다다히로 ,  야마모토가오루 ,  고미아츠시 ,  하라마사미치 ,  후지사토도시아코 ,  파게쟈끄 ,  미즈사와야스시

IPC: H01L21/02

Abstract: An apparatus for thermal and plasma enhanced vapor deposition and a method for operating the same are provided to reduce pollution between interfaces of deposited layers and to realize a structure suitable for a vapor deposition and a sample delivery in the same system. A deposition system(101) forms a deposition material on a substrate(125). The deposition system includes a first assembly, a second assembly, a substrate stage(120), and a sealing assembly. The first assembly has a process space(180) where materials are deposited. A second assembly is coupled to the first assembly. The second assembly has a transfer space(182) where the substrate is carried in and out of the deposition system. The substrate stage is connected to the second assembly. The substrate stage supports the substrate to change a size of the process space. The substrate is moved in parallel from a first position in the process space to a second position in the process space by the substrate stage. A sealing assembly has a seal, which controls a gas flow between the process space and the transfer space while the substrate is moved in parallel within the process space.

Abstract translation: 提供一种用于热和等离子体增强气相沉积的装置及其操作方法，以减少沉积层界面之间的污染，并实现适用于同一系统中气相沉积和样品输送的结构。 沉积系统（101）在衬底（125）上形成沉积材料。 沉积系统包括第一组件，第二组件，衬底台（120）和密封组件。 第一组件具有沉积材料的工艺空间（180）。 第二组件联接到第一组件。 第二组件具有传送空间（182），其中衬底被载入和离开沉积系统。 衬底台连接到第二组件。 衬底台支撑衬底以改变工艺空间的尺寸。 基板从处理空间中的第一位置平行移动到处理空间中的第二位置。 密封组件具有密封件，其在基板在处理空间内平行移动时控制处理空间与传送空间之间的气流。

公开(公告)号：KR1020070053142A

公开(公告)日：2007-05-23

申请号：KR1020060113812

申请日：2006-11-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 리이쳉 ,  이시자카다다히로 ,  야마모토가오루 ,  고미아츠시 ,  하라마사미치 ,  후지사토도시아코 ,  파게쟈끄 ,  미즈사와야스시

IPC: H01L21/02

CPC classification number: C23C16/45517 ,  C23C16/4401 ,  C23C16/4412 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32522

Abstract: 기판상에서의 기상 증착을 위한 방법, 컴퓨터 판독 가능한 기록 매체 및 시스템은 기상 증착 시스템의 제1 어셈블리를 제1 온도로 유지하고, 기상 증착 시스템의 제2 어셈블리를 상기 제1 온도보다 낮은 감소된 온도로 유지하고, 기판을 제2 어셈블리의 전달 공간으로부터 진공 격리된 제1 어셈블리의 공정 공간 내에 배치하며, 기판상에 재료를 증착한다. 따라서 기상 증착 시스템은 재료 증착을 실행하도록 구성된 공정 공간을 갖는 제1 어셈블리와, 제1 어셈블리에 결합되고 기상 증착 시스템의 내외로 기판을 운반하게 하는 전달 공간을 갖는 제2 어셈블리와, 제2 어셈블리에 접속되어 기판을 지지하도록 구성된 기판 스테이지와, 공정 공간을 전달 공간으로부터 분리하도록 구성된 실링 어셈블리를 포함한다. 제1 어셈블리는 제1 온도로 유지되도록 구성되고, 제2 어셈블리는 제1 온도보다 낮은 감소된 온도로 유지되도록 구성된다.