公开(公告)号：KR100543468B1

公开(公告)日：2006-01-20

申请号：KR1020030093399

申请日：2003-12-18

Applicant: 삼성전자주식회사

Inventor： 신경수 ,  윤광준 ,  최선용 ,  전충삼 ,  박동진

IPC: H01L21/66

CPC classification number: G03F7/70616

Abstract: 본 발명은 반도체 패턴의 거리 측정 시스템 및 거리 측정 방법을 제공한다. 이 시스템은 현미경 및 제어장치를 포함한다. 제어장치는 제1/제2 지점을 포함하는 제1/제2 시역내 제1/제2 기준점의 제1/제2 기준 좌표값을 산출하고, 제1/제2 기준점에 대한 제1/제2 지점의 제1/제2 지점 좌표값을 산출하며, 제1/제2 기준 좌표값 및 제1/제2 지점 좌표값으로 부터 제1/제2 지점의 제1/제2 실좌표값을 산출하고, 제1 및 제2 실좌표값들로 부터 제1 및 제2 지점들간의 거리를 산출한다.

公开(公告)号：KR100492159B1

公开(公告)日：2005-06-02

申请号：KR1020020066613

申请日：2002-10-30

Applicant: 삼성전자주식회사

Inventor： 전충삼 ,  최선용 ,  김광수 ,  김주우 ,  최정현 ,  박동진

IPC: H01L21/66

CPC classification number: H01L21/67253 ,  G01N21/9503 ,  G01N21/95607 ,  G01N2021/0162 ,  G01N2021/0187 ,  G01N2021/1736 ,  G01N2021/1772 ,  G01N2021/8411 ,  G01N2021/8896 ,  G01N2021/95615 ,  G01N2201/103 ,  G01N2201/1087

Abstract: 기판의 EBR/EEW 검사, 패턴의 결함 검사 및 레티클 에러 검사를 모두 수행할 수 있는 자동화된 통합 기판 검사 장치가 개시되어 있다. 제1이미지 획득부는 기판의 가장자리의 제1이미지를 획득하며, 제2이미지 획득부는 기판의 패턴에 대한 제2이미지를 획득한다. 제1이미지는 제1스테이지에 지지된 기판으로부터 획득되며, 제2이미지는 제2스테이지에 지지된 기판으로부터 획득된다. 이송 로봇은 제1스테이지로부터 제2스테이지로 기판을 이송한다. 이미지 처리부는 제1이미지로부터 기판의 EBR/EEW 검사를 수행하며, 제2이미지로부터 패턴의 결함 검사 및 레티클 에러 검사를 수행한다. 다양한 기판의 검사 공정을 통합 기판 검사 장치를 통해 수행하므로 기판 검사 공정의 효율이 향상되고, 다양한 기판 검사 공정의 신뢰도가 향상된다.

公开(公告)号：KR100468714B1

公开(公告)日：2005-01-29

申请号：KR1020010039535

申请日：2001-07-03

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  이춘득 ,  길준잉

IPC: G03F7/32

Abstract: PURPOSE: Provided are a composition for removing resist, which has excellent ability for removing the resist, polymers, organic metallic polymers, and metal oxides and dose not cause damage to a lower part membrane and dose not leave residues after rinsing, and a method for removing the resist by using the composition. CONSTITUTION: The composition for removing the resist contains: alkoxy N-hydroxyalkyl alkanamide represented by the formula 1: R4-O-R3-CO-N-R1R2OH; at least one compound selected from the group consisting of an alkanol amine represented by the formula 2: R1-NH-R2OH, a polar material having a dipole moment of more than 3, and an attack inhibitor represented by the formula 3: R6-(OH)n; hydroxy ammonium salt like hydroxy ammonium sulfate. And the method for removing the resist contains the steps of: forming a resist membrane on a substrate; bring the substrate into contact with the composition for removing the resist. In the formula, R1 is H, C1-C5 hydrocarbon, or aromatic hydrocarbon having 1-3 ring structure, R2 is C1-C5 hydrocarbon or aromatic hydrocarbon having 1-3 ring structure, each of R3 and R4 is C1-C5 hydrocarbon, R6 is C1-C5 hydrocarbon, C1-C5 hydrocarbon having -COOH, aromatic hydrocarbon having 1-3 ring structure, or aromatic hydrocarbon having -COOH and 1-3 ring structure, and n is an integer of 1-4.

Abstract translation: 用途：提供一种抗蚀剂去除用组合物，其具有优异的除去抗蚀剂，聚合物，有机金属聚合物和金属氧化物的能力，并且不会对下部膜造成损害，并且不会在漂洗后留下残留物，以及 通过使用该组合物除去抗蚀剂。 组成：用于除去抗蚀剂的组合物含有：由式1表示的烷氧基N-羟基烷基链烷酰胺：R4-O-R3-CO-N-R1R2OH; 选自由式2表示的烷醇胺：R1-NH-R2OH，偶极矩大于3的极性物质和式3表示的进攻抑制剂组成的组中的至少一种化合物：R6-（ OH）n表示的 羟基铵盐如羟基硫酸铵。 并且去除抗蚀剂的方法包括以下步骤：在衬底上形成抗蚀剂膜; 使基材与用于除去抗蚀剂的组合物接触。 在式中，R1是H，C1-C5烃或具有1-3个环结构的芳烃，R2是具有1-3个环结构的C1-C5烃或芳烃，每个R3和R4是C1-C5烃， R6是C1-C5烃，具有-COOH的C1-C5烃，具有1-3个环结构的芳烃或具有-COOH和1-3个环结构的芳烃，并且n是1-4的整数。

公开(公告)号：KR100434491B1

公开(公告)日：2004-06-05

申请号：KR1020010049601

申请日：2001-08-17

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김경대 ,  전상문 ,  황진호 ,  손일현 ,  박상오 ,  전필권

IPC: G03F7/32

CPC classification number: C11D1/526 ,  C11D11/0047 ,  G03F7/425

Abstract: Resist-removing composition comprises an N-hydroxyalkyl alkoxyalkanamide (I) and a swelling agent. An independent claim is also included for a process for removing a resist layer from a substrate, comprising contacting the substrate with a composition as above.

Abstract translation: 抗蚀剂去除组合物包含N-羟烷基烷氧基链烷酰胺（I）和溶胀剂。 还包括独立权利要求用于从基材去除抗蚀剂层的方法，包括使基材与如上所述的组合物接触。

公开(公告)号：KR1020040038560A

公开(公告)日：2004-05-08

申请号：KR1020020067572

申请日：2002-11-01

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  전상문 ,  최선용 ,  전충삼 ,  김정수

IPC: H01L21/66

Abstract: PURPOSE: A method for measuring the depth of a contact hole is provided to be capable of quickly checking the profile of the contact hole without the damage of a semiconductor substrate. CONSTITUTION: Each wavelength intensity reflected from the upper and lower portion of a contact hole is measured by focusing a light source to the first position of the contact hole(S110,S120). The focusing point of the light source is moved from the first position of the contact hole to the second position(S130). Each wavelength intensity reflected from the upper and lower portion of the contact hole is measured according to each focusing point formed while the focusing point of the first position is moved to the second position of the contact hole(S140). Each wavelength intensity reflected from the upper and lower portion of the contact hole is measured by focusing the light source to the second position of the contact hole(S150). The depth of the contact hole is measured by using the difference between the first and second focusing point value(S160).

Abstract translation: 目的：提供一种用于测量接触孔深度的方法，以便能够快速地检查接触孔的轮廓而不会损坏半导体衬底。 构成：通过将光源聚焦到接触孔的第一位置（S110，S120）来测量从接触孔的上部和下部反射的每个波长强度。 光源的聚焦点从接触孔的第一位置移动到第二位置（S130）。 根据在第一位置的聚焦点移动到接触孔的第二位置时形成的每个聚焦点来测量从接触孔的上部和下部反射的每个波长强度。 通过将光源聚焦到接触孔的第二位置来测量从接触孔的上部和下部反射的每个波长强度（S150）。 通过使用第一和第二聚焦点值之间的差来测量接触孔的深度（S160）。

公开(公告)号：KR1020040033525A

公开(公告)日：2004-04-28

申请号：KR1020020062651

申请日：2002-10-15

Applicant: 삼성전자주식회사

Inventor： 김정수 ,  최선용 ,  김광수 ,  이동춘 ,  박동진 ,  류성곤 ,  김주우

IPC: H01L21/66

Abstract: PURPOSE: A defect inspection method of a semiconductor device is provided to be capable of improving the inspection efficiency of failure for a predetermined region except a cell region. CONSTITUTION: The image of the first position is stored as the first image(S100). At this time, the first position is located on the X-axis. The first image is compared with a predetermined image located on the X-axis(S110). Whether the first image is located at the cross point of the X-axis and Y-axis, or not, is decided(S120). When the first image is located at the X-axis alone, the first position is checked from a map(S150). Then, whether the first position is an end point, or not, is decided(S160). When the first image is located at the cross point, an image near the first image to the Y-axis is stored as the second image(S130). The second image is compared with a predetermined image located on the Y-axis(S140).

Abstract translation: 目的：提供半导体器件的缺陷检查方法，以能够提高除了单元区域之外的预定区域的故障检查效率。 构成：将第一位置的图像作为第一图像存储（S100）。 此时，第一个位置位于X轴上。 将第一图像与位于X轴上的预定图像进行比较（S110）。 决定第一图像是否位于X轴和Y轴的交叉点上（S120）。 当第一图像单独位于X轴时，从地图检查第一位置（S150）。 然后，判定第一位置是否为终点（S160）。 当第一图像位于交叉点时，存储第一图像到Y轴附近的图像作为第二图像（S130）。 将第二图像与位于Y轴上的预定图像进行比较（S140）。

公开(公告)号：KR1020040030290A

公开(公告)日：2004-04-09

申请号：KR1020030062357

申请日：2003-09-06

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김진성 ,  전필권 ,  황진호 ,  손일현

IPC: G03F7/32

CPC classification number: H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/31133

Abstract: PURPOSE: Provided are a composition for stripping a photoresist pattern to form a pad, which can perform exfoliation and dissolution of the photoresist pattern in balance and dose not leave stitch shaped residues after removing the photoresist pattern, and a process for producing the composition. CONSTITUTION: The composition for stripping the photoresist pattern contains 10-90wt%(based on the total amount of the composition) of ethoxy(N-hydroxyalkyl)alkanamide(CH3CH2-O-R3-CO-N-R1R2OH), 0.01-40wt%(based on the total amount of the composition) of alkanolamine(NHR1R2OH), and 0.01-50wt%(based on the total amount of the composition) of a polar material being at least one selected from water, methanol, and dimethylsulfoxide. And the process for producing the composition for stripping the photoresist pattern contains the steps of: mixing alkyl alkoxy alkanoate(R4-O-R3-COOR5) with the alkanolamine(NHR1R2OH) and additionally the polar material; stirring the mixture and removing alcohol; and cooling the resultant. In the formula, R1 is H, C1-C5 hydrocarbon or C1-C3 aromatic hydrocarbon, R2 is C1-C5 hydrocarbon or C1-C3 aromatic hydrocarbon, and R3, R4, and R5 are C1-C5 hydrocarbon.

Abstract translation: 目的：提供剥离光致抗蚀剂图案以形成垫的组合物，其可以平衡地进行光刻胶图案的剥离和溶解，并且在除去光致抗蚀剂图案之后不会留下缝合残留物，以及制备该组合物的方法。 构成：剥离光致抗蚀剂图案的组合物含有10-90wt％（基于组合物的总量）乙氧基（N-羟烷基）烷酰胺（CH 3 CH 2 -O-R 3 -CO-N-R 1 R 2 OH），0.01-40wt％ （基于组合物的总量）的链烷醇胺（NHR 1 R 2 OH）和0.01-50重量％（基于组合物的总量）极性材料为选自水，甲醇和二甲基亚砜中的至少一种。 制备用于剥离光致抗蚀剂图案的组合物的方法包括以下步骤：将烷基烷氧基链烷酸酯（R 4 -O-R 3 -COOR 5）与链烷醇胺（NHR 2 R 2 OH）和另外的极性材料混合; 搅拌混合物并除去醇; 并冷却所得物。 在该式中，R 1为H，C 1 -C 5烃或C 1 -C 3芳烃，R 2为C 1 -C 5烃或C 1 -C 3芳烃，R 3，R 4和R 5为C 1 -C 5烃。

公开(公告)号：KR1020040018862A

公开(公告)日：2004-03-04

申请号：KR1020020050943

申请日：2002-08-27

Applicant: 삼성전자주식회사

Inventor： 박희정 ,  김진성 ,  박동진 ,  오명훈

IPC: H01L21/304

Abstract: PURPOSE: A method for forming a metal silicide layer of a semiconductor device is provided to be capable of minimizing the bridge phenomenon between patterns due to particles generated under a tungsten silicide layer deposition process. CONSTITUTION: A metal silicide layer(70) is deposited on a substrate(50). At this time, the substrate has a predetermined pattern. The resultant structure is dipped into a chemical solution for removing particles of the substrate. The chemical solution has a higher etching ratio for the particles than the metal silicide layer. Preferably, the chemical solution is formed by mixing alkanolamine and H2O of 1: 1-4 weight%. Preferably, a cleaning process is then carried out on the resultant structure by using distilled water.

Abstract translation: 目的：提供一种用于形成半导体器件的金属硅化物层的方法，以便能够最小化由于在硅化钨层沉积工艺下产生的颗粒而导致的图案之间的桥接现象。 构成：金属硅化物层（70）沉积在衬底（50）上。 此时，基板具有预定图案。 将所得结构浸入用于除去基材颗粒的化学溶液中。 该化学溶液对于颗粒具有比金属硅化物层更高的蚀刻比。 优选地，化学溶液是通过混合1至1-4重量％的烷醇胺和H 2 O形成的。 优选地，然后通过使用蒸馏水对所得结构进行清洁处理。

公开(公告)号：KR100416794B1

公开(公告)日：2004-01-31

申请号：KR1020010019654

申请日：2001-04-12

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  길준잉 ,  박상오 ,  최상철

IPC: C11D3/26

Abstract: PURPOSE: Provided are a detergent and a method for cleansing an ESC chuck of a metal dry etcher for semiconductors, which can secure stability for workers, maximize work efficiency, minimize the attack of the ESC chuck against a wafer, stabilize the supply and demand of the detergent, and prevent chemicals from remaining on the wafer. CONSTITUTION: The detergent comprises 0.1-0.2vol% of HF, 2-5vol% of NH4OH, 5-10vol% of CH3COOH, 5-10vol% of xylitol, 5-10vol% of (NH3OH)2SO4, and 60-80vol% of H2O. And the cleansing method is performed by soaking a cotton swab with the detergent and cleansing or impregnating into the detergent at a room temperature to 80deg.C.

Abstract translation: 目的：提供一种用于清洗半导体用金属干蚀刻机的ESC卡盘的洗涤剂和方法，其可以保证工作人员的稳定性，使工作效率最大化，将ESC卡盘对晶片的攻击减至最小，稳定供应和需求 清洁剂，并防止化学品残留在晶圆上。 构成：洗涤剂包含0.1-0.2vol％的HF，2-5vol％的NH 4 OH，5-10vol％的CH 3 COOH，5-10vol％的木糖醇，5-10vol％的（NH 3 OH）2 SO 4和60-80vol％的 H2O。 清洁方法是通过将棉签浸入洗涤剂中并在室温至80℃下清洁或浸渍到洗涤剂中来进行的。

公开(公告)号：KR1020040000230A

公开(公告)日：2004-01-03

申请号：KR1020020035422

申请日：2002-06-24

Applicant: 삼성전자주식회사

Inventor： 김대훈 ,  전상문 ,  김진성 ,  전필권 ,  박동진 ,  김정주 ,  류재준

IPC: H01L21/304

CPC classification number: B08B7/0071 ,  B08B3/12 ,  C11D7/10 ,  C11D7/265 ,  C11D7/5013 ,  C11D11/0047 ,  C11D11/007

Abstract: PURPOSE: A cleaning solution and a method for cleaning ceramic components by using the same are provided to clean effectively the ceramic components including byproducts generated from a plasma process by changing ingredients of the cleaning solution. CONSTITUTION: A cleaning solution includes fluoride salt of 5 to 10 weight percent, organic acid of 10 to 20 weight percent, organic solvent of 30 to 50 weight percent, and water of 20 to 50 weight percent. The fluoride salt includes ammonium fluoride. The organic acid includes acetic acid. The organic solvent includes dimethyl acetamide. The cleaning solution further includes (NH3OH)2SO4 of 0 to 10 weight percent on the basis of the cleaning solution of 100 weight percent. A method for cleaning ceramic components by using the cleaning solution includes a soaking process(S12) for soaking the ceramic components into the cleaning solution, a rinsing process(S14) for rinsing the ceramic components, and a heat treatment process(S16) for heating the ceramic components.

Abstract translation: 目的：提供清洁溶液和通过使用其来清洁陶瓷组分的方法，以通过改变清洁溶液的成分来有效地清洁包括由等离子体工艺产生的副产物的陶瓷组分。 构成：清洗液含有5〜10重量％的氟化物盐，10〜20重量％的有机酸，30〜50重量％的有机溶剂，20〜50重量％的水。 氟化物盐包括氟化铵。 有机酸包括乙酸。 有机溶剂包括二甲基乙酰胺。 基于100重量％的清洁溶液，清洗溶液还包含0-10重量％的（NH 3 OH）2 SO 4。 通过使用清洗液清洗陶瓷部件的方法包括将陶瓷成分浸渍到清洗液中的均热处理（S12），对陶瓷成分进行漂洗的漂洗工序（S14）和加热用热处理工序（S16） 陶瓷组件。