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    그래핀의 제조 방법
    51.
    发明公开
    그래핀의 제조 방법 有权
    用于制造石墨的方法，通过该方法制造的石墨，包含石墨的导电膜，包含石墨的透明电极，包含石墨的放射或加热装置

    公开(公告)号：KR1020110031863A

    公开(公告)日：2011-03-29

    申请号：KR1020090089289

    申请日：2009-09-21

    Applicant: 한화테크윈 주식회사 ,  성균관대학교산학협력단

    Inventor： 송영일 ,  안종현 ,  이영빈 ,  홍병희

    IPC: C01B31/02 ,  C23C16/22 ,  H01L33/02

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/26 ,  H01B1/04 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/02664

    Abstract: PURPOSE: A producing method of graphene, the graphene, a thin conductive film, a transparent electrode, and a heat generating or radiating device including the graphene are provided to rapidly separate the graphene from a graphene member. CONSTITUTION: A producing method of graphene comprises the following steps: preparing a graphene member containing a base member(110), a hydrophilic oxidized layer(120) formed on the base member, a hydrophobic metal catalyst layer(130), formed on the hydrophilic oxidized layer, and the graphene(140) formed on the metal catalyst layer; pouring water to the graphene member; dividing the portion in between the hydrophilic oxidized layer and the hydrophobic metal catalyst layer; and removing the metal catalyst layer by etching.

    Abstract translation: 目的：提供石墨烯，石墨烯，薄导电膜，透明电极以及包括石墨烯的发热或辐射装置的制造方法，以从石墨烯构件快速分离石墨烯。 构成：石墨烯的制造方法包括以下步骤：制备含有基底构件（110），形成在基底构件上的亲水性氧化层（120）的石墨烯构件，形成在亲水层上的疏水性金属催化剂层（130） 氧化层和形成在金属催化剂层上的石墨烯（140）; 将水倒入石墨烯构件; 将亲水氧化层和疏水性金属催化剂层之间的部分分隔开; 并通过蚀刻去除金属催化剂层。

    2차원 구조를 갖는 무기재료의 층을 포함하는 유기 태양 전지
    53.
    发明授权
    2차원 구조를 갖는 무기재료의 층을 포함하는 유기 태양 전지 有权
    具有二维结构的无机材料层的有机太阳能电池装置

    公开(公告)号：KR101413842B1

    公开(公告)日：2014-06-30

    申请号：KR1020130006073

    申请日：2013-01-18

    Applicant: 가부시키가이샤 가네카 ,  성균관대학교산학협력단

    Inventor： 안종현 ,  김금옥

    IPC: H01L51/42

    CPC classification number: Y02E10/549 ,  H01L51/42

    Abstract: The present invention provides an organic solar cell which includes a substrate; an inorganic material layer which is formed on the substrate and has a two-dimensional structure; an anode located on the inorganic material layer; a cathode; and an active layer located between the anode and the cathode. Moreover, the present invention also provides a method of manufacturing a multi-layered structure containing a carbon material layer and an inorganic material layer, which includes the steps of vaporizing a precursor compound of an inorganic material under a reducing atmosphere; forming the inorganic material layer on a metal electrode of an electric furnace after the vaporized precursor compound of the inorganic material is transferred into the electric furnace; vaporizing a precursor compound of a carbon material; and forming the carbon material layer on the inorganic material layer after the vaporized precursor compound of the carbon material is transferred into the electric furnace.

    Abstract translation: 本发明提供了一种有机太阳能电池，其包括基板; 形成在基板上并具有二维结构的无机材料层; 位于无机材料层上的阳极; 阴极 以及位于阳极和阴极之间的有源层。 此外，本发明还提供一种制造包含碳材料层和无机材料层的多层结构的方法，其包括在还原气氛下蒸发无机材料的前体化合物的步骤; 在将无机材料的汽化前体化合物转移到电炉中之后，在电炉的金属电极上形成无机材料层; 汽化碳材料的前体化合物; 在碳素材料的汽化前体化合物被转移到电炉中之后，在无机材料层上形成碳材料层。

    높은 변형률에도 안정적인 거동을 가지는 절연체 및 게이트 전극을 포함하는 그래핀 전계효과 트랜지스터, 및 이의 제조 방법
    54.
    发明公开
    높은 변형률에도 안정적인 거동을 가지는 절연체 및 게이트 전극을 포함하는 그래핀 전계효과 트랜지스터, 및 이의 제조 방법 有权
    具有具有稳定行为的电介质和栅极电极的石墨场效应晶体管具有较高的应变性及其制造方法

    公开(公告)号：KR1020140044763A

    公开(公告)日：2014-04-15

    申请号：KR1020130119462

    申请日：2013-10-07

    Applicant: 성균관대학교산학협력단

    Inventor： 안종현 ,  조정호 ,  이승기

    IPC: H01L29/786 ,  H01L21/336

    CPC classification number: H01L29/1606 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/78603

    Abstract: The present invention relates to a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains and a method for manufacturing the same. According to an embodiment of the present invention, the method of manufacturing a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains includes a step of preparing a monolithically patterned graphene layer; a step of forming an insulating layer; and a step of forming a gate electrode. [Reference numerals] (AA) Patterned graphene; (BB) Rubber; (CC) Aerosol jet printing; (DD) Nozzle; (EE) Ion gel printing; (FF) Ethanol; (GG,HH) Stretch(transformation); (II) PEDOT:PSS printing; (JJ) Hexane evaporation

    Abstract translation: 石墨烯场效应晶体管及其制造方法技术领域本发明涉及具有电导率和栅电极的石墨烯场效应晶体管，其具有稳定的行为，并且具有高应变性及其制造方法。 根据本发明的实施例，制造具有稳定行为的电介质和栅电极的石墨烯场效应晶体管的方法，尽管高应变包括制备单片图案化石墨烯层的步骤; 形成绝缘层的步骤; 以及形成栅电极的步骤。 （标号）（AA）图案化石墨烯; （BB）橡胶; （CC）气溶胶喷墨印刷; （DD）喷嘴; （EE）离子凝胶印刷; （FF）乙醇; （GG，HH）拉伸（转化）; （二）PEDOT：PSS印刷; （JJ）己烷蒸发

    플렉시블 전계효과 트랜지스터 및 이의 제조 방법
    59.
    发明公开
    플렉시블 전계효과 트랜지스터 및 이의 제조 방법 无效
    灵活的场效应晶体管及其制造方法

    公开(公告)号：KR1020120034349A

    公开(公告)日：2012-04-12

    申请号：KR1020100095834

    申请日：2010-10-01

    Applicant: 성균관대학교산학협력단 ,  숭실대학교산학협력단

    Inventor： 안종현 ,  조정호 ,  홍병희 ,  장호욱 ,  이승기 ,  김범준

    IPC: H01L29/786 ,  H01L21/336

    CPC classification number: H01L29/0669 ,  H01L29/16 ,  H01L29/4908 ,  H01L51/0045

    Abstract: PURPOSE: A flexible field effect transistor and a manufacturing method thereof are provided to manufacture low voltage operation graphene FET(Field Effect Transistor) array on a plastic substrate by using ionic gel for a gate insulator. CONSTITUTION: A semiconductor layer includes a carbon nano-structure which is arranged to form a channel region between a source electrode and a drain electrode. The carbon nano structure includes graphene. The graphene is formed on a metal catalytic layer by chemical vapor deposition. An ionic gel layer is formed between the semiconductor layer and the gate electrode including the carbon nano-structure. The ionic gel layer forms an insulator layer between the channel region and the gate electrode.

    Abstract translation: 目的：提供一种灵活的场效应晶体管及其制造方法，通过使用离子凝胶作为栅极绝缘体，在塑料基板上制造低压操作石墨烯FET（场效应晶体管）阵列。 构成：半导体层包括碳纳米结构，其被布置成在源极和漏极之间形成沟道区。 碳纳米结构包括石墨烯。 通过化学气相沉积在金属催化剂层上形成石墨烯。 在半导体层和包括碳纳米结构的栅电极之间形成离子凝胶层。 离子凝胶层在沟道区和栅电极之间形成绝缘体层。

    플렉시블 산화물 반도체 소자 제조 방법
    60.
    发明公开
    플렉시블 산화물 반도체 소자 제조 방법 失效
    方法制造柔性氧化物半导体器件

    公开(公告)号：KR1020110011889A

    公开(公告)日：2011-02-09

    申请号：KR1020090069350

    申请日：2009-07-29

    Applicant: 성균관대학교산학협력단

    Inventor： 황동목 ,  안종현 ,  김병성 ,  박경애

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/78603

    Abstract: PURPOSE: A method for manufacturing a flexible oxide semiconductor device is provided to improve the electrical property of the device by implementing a thermal process at high temperature without the deformation of a substrate. CONSTITUTION: A sacrificial layer is formed on a substrate(S110). A buffer layer is formed on the sacrificial layer(S120). An oxide semiconductor device is formed on the buffer layer(S130). A crack preventive protection layer is formed on the oxide semiconductor device(S140). The oxide semiconductor device is thermally processed at high temperature(S150). The sacrificial layer is eliminated to separate the oxide semiconductor device from the substrate(S160). The separated oxide semiconductor device is transferred to a flexible substrate(S170).

    Abstract translation: 目的：提供一种用于制造柔性氧化物半导体器件的方法，以通过在高温下实施热处理而不使衬底变形来改善器件的电性能。 构成：在基板上形成牺牲层（S110）。 在牺牲层上形成缓冲层（S120）。 在缓冲层上形成氧化物半导体器件（S130）。 在氧化物半导体器件上形成防裂保护层（S140）。 氧化物半导体器件在高温下进行热处理（S150）。 去除牺牲层以将氧化物半导体器件与衬底分离（S160）。 分离的氧化物半导体器件被转移到柔性衬底（S170）。

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